Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes

To yield quantitative information about their interface states, PtSi/p-Si Schottky structures have been studied using conductance and capacitance measurements over a wide range of frequencies (1 kHz to 1 MHz) and at several temperatures (80–140 K). The increase in capacitance at lower frequencies is...

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2008-12, Vol.154, p.179-182
Hauptverfasser:	Sellai, A., Ouennoughi, Z.
Format:	Artikel
Sprache:	eng
Schlagworte:	Conductance method Interface states Schottky contacts
Online-Zugang:	Volltext
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