Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE
In this study, we report on the pulsed metalorganic vapor phase epitaxy (MOVPE) of InN as well as the optical and electronic properties of the films as a function of V/III ratio and growth temperatures. The growth of InN films was conducted utilizing a vertical reactor with TMIn and NH 3 as the In-...
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| Veröffentlicht in: | Journal of crystal growth 2008-11, Vol.310 (23), p.4947-4953 |
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| creator | Jamil, Muhammad Zhao, Hongping Higgins, John B. Tansu, Nelson |
| description | In this study, we report on the pulsed metalorganic vapor phase epitaxy (MOVPE) of InN as well as the optical and electronic properties of the films as a function of V/III ratio and growth temperatures. The growth of InN films was conducted utilizing a vertical reactor with TMIn and NH
3 as the In- and N-precursors, respectively. Metallic droplet-free InN films were achieved on GaN/sapphire template in a pulsed MOVPE mode with low V/III ratio condition. In the pulsed growth mode, NH
3 was constantly flowing while the TMIn was sent into the reactor chamber for a 36-s pulse and then it bypassed the reactor chamber for an 18-s pulse for a total cycle time of 54
s. At a growth pressure of 200
Torr, the effects of growth temperature (510–575
°C) and V/III ratio (12,460–17,100) on the photoluminescence (PL) transitions were investigated. Morphological evolution as well as the electrical quality of the overgrown films have also been studied for the given growth conditions. |
| doi_str_mv | 10.1016/j.jcrysgro.2008.07.122 |
| format | Article |
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3 as the In- and N-precursors, respectively. Metallic droplet-free InN films were achieved on GaN/sapphire template in a pulsed MOVPE mode with low V/III ratio condition. In the pulsed growth mode, NH
3 was constantly flowing while the TMIn was sent into the reactor chamber for a 36-s pulse and then it bypassed the reactor chamber for an 18-s pulse for a total cycle time of 54
s. At a growth pressure of 200
Torr, the effects of growth temperature (510–575
°C) and V/III ratio (12,460–17,100) on the photoluminescence (PL) transitions were investigated. Morphological evolution as well as the electrical quality of the overgrown films have also been studied for the given growth conditions.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2008.07.122</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Photoluminescence ; A3. MOCVD ; B1. Nitrides ; B2. InN ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Photoluminescence ; Physics ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2008-11, Vol.310 (23), p.4947-4953</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-ebbdf4ecba186a89551f20e2f4ac624bf356d1e617d89a32f0d073bdf137f0053</citedby><cites>FETCH-LOGICAL-c439t-ebbdf4ecba186a89551f20e2f4ac624bf356d1e617d89a32f0d073bdf137f0053</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2008.07.122$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,3551,23935,23936,25145,27929,27930,46000</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21021855$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jamil, Muhammad</creatorcontrib><creatorcontrib>Zhao, Hongping</creatorcontrib><creatorcontrib>Higgins, John B.</creatorcontrib><creatorcontrib>Tansu, Nelson</creatorcontrib><title>Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE</title><title>Journal of crystal growth</title><description>In this study, we report on the pulsed metalorganic vapor phase epitaxy (MOVPE) of InN as well as the optical and electronic properties of the films as a function of V/III ratio and growth temperatures. The growth of InN films was conducted utilizing a vertical reactor with TMIn and NH
3 as the In- and N-precursors, respectively. Metallic droplet-free InN films were achieved on GaN/sapphire template in a pulsed MOVPE mode with low V/III ratio condition. In the pulsed growth mode, NH
3 was constantly flowing while the TMIn was sent into the reactor chamber for a 36-s pulse and then it bypassed the reactor chamber for an 18-s pulse for a total cycle time of 54
s. At a growth pressure of 200
Torr, the effects of growth temperature (510–575
°C) and V/III ratio (12,460–17,100) on the photoluminescence (PL) transitions were investigated. Morphological evolution as well as the electrical quality of the overgrown films have also been studied for the given growth conditions.</description><subject>A1. Photoluminescence</subject><subject>A3. MOCVD</subject><subject>B1. Nitrides</subject><subject>B2. InN</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkc1u1DAUhS0EEkPhFZA3IFgkc-38OLMDVaVE6t-izNZynOsZjzJOsJ2ivgmPi8MUtt3Y8tU537F9CHnPIGfA6vUhP2j_GHZ-zDlAk4PIGecvyIo1osgqAP6SrNLKM-Bl85q8CeEAkJwMVuR368wwo9NIR0MT41fc04jHCb2Ks0eqXE-367ZtaRrYkY6Oxn0ST9FqNVC9V17piN6GNAgLxCmfMLRbnDs10U-QC0Fx-5m27uZvhFsol-pmHdQ07W1KmYN1OzrNQ8CeXt9u7y7ekldGpeO7p_2M_Ph2cX_-Pbu6vWzPv15luiw2McOu602JulOsqVWzqSpmOCA3pdI1LztTVHXPsGaibzaq4AZ6EEXysEIYgKo4Ix9P3MmPP2cMUR5t0DgMyuE4B1kkYsUES8L6JNR-DMGjkZO3R-UfJQO5FCEP8l8RcilCgpCpiGT88JSgQvoy45XTNvx3cwacNdVyky8nHabnPlj0Mmi7NNOnH9JR9qN9LuoP-vmi9g</recordid><startdate>20081115</startdate><enddate>20081115</enddate><creator>Jamil, Muhammad</creator><creator>Zhao, Hongping</creator><creator>Higgins, John B.</creator><creator>Tansu, Nelson</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20081115</creationdate><title>Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE</title><author>Jamil, Muhammad ; Zhao, Hongping ; Higgins, John B. ; Tansu, Nelson</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-ebbdf4ecba186a89551f20e2f4ac624bf356d1e617d89a32f0d073bdf137f0053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>A1. Photoluminescence</topic><topic>A3. MOCVD</topic><topic>B1. Nitrides</topic><topic>B2. InN</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jamil, Muhammad</creatorcontrib><creatorcontrib>Zhao, Hongping</creatorcontrib><creatorcontrib>Higgins, John B.</creatorcontrib><creatorcontrib>Tansu, Nelson</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jamil, Muhammad</au><au>Zhao, Hongping</au><au>Higgins, John B.</au><au>Tansu, Nelson</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE</atitle><jtitle>Journal of crystal growth</jtitle><date>2008-11-15</date><risdate>2008</risdate><volume>310</volume><issue>23</issue><spage>4947</spage><epage>4953</epage><pages>4947-4953</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>In this study, we report on the pulsed metalorganic vapor phase epitaxy (MOVPE) of InN as well as the optical and electronic properties of the films as a function of V/III ratio and growth temperatures. The growth of InN films was conducted utilizing a vertical reactor with TMIn and NH
3 as the In- and N-precursors, respectively. Metallic droplet-free InN films were achieved on GaN/sapphire template in a pulsed MOVPE mode with low V/III ratio condition. In the pulsed growth mode, NH
3 was constantly flowing while the TMIn was sent into the reactor chamber for a 36-s pulse and then it bypassed the reactor chamber for an 18-s pulse for a total cycle time of 54
s. At a growth pressure of 200
Torr, the effects of growth temperature (510–575
°C) and V/III ratio (12,460–17,100) on the photoluminescence (PL) transitions were investigated. Morphological evolution as well as the electrical quality of the overgrown films have also been studied for the given growth conditions.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2008.07.122</doi><tpages>7</tpages></addata></record> |
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| subjects | A1. Photoluminescence A3. MOCVD B1. Nitrides B2. InN Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Photoluminescence Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Vapor phase epitaxy growth from vapor phase |
| title | Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE |
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