Low-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts
Cu‐Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu‐catalytic growth. The low‐temperature growth is accessible at as low as 200 °C on polymer substrates, and the epitaxial growth is also possible on single‐crystalline substrates with the...
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Veröffentlicht in: | Advanced materials (Weinheim) 2008-12, Vol.20 (24), p.4684-4690 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Cu‐Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu‐catalytic growth. The low‐temperature growth is accessible at as low as 200 °C on polymer substrates, and the epitaxial growth is also possible on single‐crystalline substrates with the narrow diameter distribution of 7 nm, directly templated from those of Cu catalysts. |
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ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.200801764 |