Low-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts

Cu‐Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu‐catalytic growth. The low‐temperature growth is accessible at as low as 200 °C on polymer substrates, and the epitaxial growth is also possible on single‐crystalline substrates with the...

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Veröffentlicht in:Advanced materials (Weinheim) 2008-12, Vol.20 (24), p.4684-4690
Hauptverfasser: Kang, Kibum, Kim, Dong An, Lee, Hyun-Seung, Kim, Cheol-Joo, Yang, Jee-Eun, Jo, Moon-Ho
Format: Artikel
Sprache:eng
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Zusammenfassung:Cu‐Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu‐catalytic growth. The low‐temperature growth is accessible at as low as 200 °C on polymer substrates, and the epitaxial growth is also possible on single‐crystalline substrates with the narrow diameter distribution of 7 nm, directly templated from those of Cu catalysts.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200801764