AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by MOVPE

AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by MOVPE

Heterojunction bipolar phototransistors (HPTs), based on GaAs technology, are widely used in the optoelectronic-integrated circuit (OEIC) [H.T. Lin, D.H. Rich, A. Larsson, J. Appl. Phys. 79 (1996) 8015 [1]; Lin Chien-chung, M. Wayne, J.S. Harris Jr., F. Sugihwo, Appl. Phys. Lett. 76 (2000) 1188 [2]]...

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Veröffentlicht in:Journal of crystal growth 2008-11, Vol.310 (23), p.5227-5231
Hauptverfasser: Sciana, Beata, Zborowska-Lindert, Iwona, Radziewicz, Damian, Boratynski, Boguslaw, Tlaczala, Marek, Kovac, Jaroslav, Srnanek, Rudolf, Skriniarova, Jaroslava, Florovic, Martin
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container_issue 23
container_start_page 5227
container_title Journal of crystal growth
container_volume 310
creator Sciana, Beata
Zborowska-Lindert, Iwona
Radziewicz, Damian
Boratynski, Boguslaw
Tlaczala, Marek
Kovac, Jaroslav
Srnanek, Rudolf
Skriniarova, Jaroslava
Florovic, Martin
description Heterojunction bipolar phototransistors (HPTs), based on GaAs technology, are widely used in the optoelectronic-integrated circuit (OEIC) [H.T. Lin, D.H. Rich, A. Larsson, J. Appl. Phys. 79 (1996) 8015 [1]; Lin Chien-chung, M. Wayne, J.S. Harris Jr., F. Sugihwo, Appl. Phys. Lett. 76 (2000) 1188 [2]]. They exhibit a large optical gain and a negligible noise level at low bias voltages. The presented work describes the fabrication and device characteristics of n-p-n AlGaAs/GaAs heterojunction phototransistor with a double Zn delta-doped GaAs base region (2delta-Zn-AlGaAs/GaAs HPT). Such construction of the transistor allows to obtain higher current gain and lower power consumption. The electrical and optical properties of the epitaxial HPT structure were examined using capacitance-voltage (EC-V) measurements, photovoltage, photocurrent and micro-Raman spectroscopies. The current-voltage (dc I-V) characteristics as well as the results of time response measurements are also presented.
doi_str_mv 10.1016/j.jcrysgro.2008.08.046
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title AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by MOVPE
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