Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4H-SiC substrates. The use of chloride-based CVD has allowed growth of 100% 4H-SiC epitaxial layers with a growth rate of 20µm/h, thus about seven times higher than with standard precursors. It was also found that chlorin...

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Hauptverfasser:	Kordina, Olof, Leone, Stefano, Pedersen, Henrik, Henry, Anne, Janzén, Erik
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemistry chloride-based CVD growth epilayers high growth rate Kemi NATURAL SCIENCES NATURVETENSKAP on-axis Si-face
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creator	Kordina, Olof Leone, Stefano Pedersen, Henrik Henry, Anne Janzén, Erik
description	The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4H-SiC substrates. The use of chloride-based CVD has allowed growth of 100% 4H-SiC epitaxial layers with a growth rate of 20µm/h, thus about seven times higher than with standard precursors. It was also found that chlorine etches preferentially the 3C-SiC inclusions that tends to nucleate on Si-face on-axis substrates. Therefore the Cl/Si ratio is a fundamental process parameter to optimize.
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fullrecord	<record><control><sourceid>proquest_swepu</sourceid><recordid>TN_cdi_proquest_miscellaneous_35410656</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>35410656</sourcerecordid><originalsourceid>FETCH-LOGICAL-c544t-439b01c6f7d8b4105976ef93ae04b5c3632469724703e4aae9d06509103f4b983</originalsourceid><addsrcrecordid>eNqVkT1v2zAQQIWiBeqm_Q-cOhSlchQ_ZI2OXMcBUmRwnZWg6FPMQBZdkoLSf18WLpq5w-GWh4fDvaL4wqAUUC2v53kuo3U4Jtc7W46Yrr_vNqUCoAp4yaB-UyyYUhVtalm9LRZQSUmlqNX74kOMzwCcLZlaFPutP3k8u2RenBnIbfBzOhLfE7GlO9cSP5KHka5eXCQ7RzfGItlNXUzBJIxkH934RNrj4IM7IL0xEQ-kfVx_LN71Zoj46e--Kvabbz_aLb1_uL1rV_fUSiESFbzpgFnV14dlJxjIplbYN9wgiE5arnglVFNXogaOwhhsDqAkNAx4L7pmya-KrxdvnPE8dfoc3MmEX9obp9fucaV9eNKDmzSTlYSMf77g5-B_ThiTPrlocRjMiH6Kmst8hJIqgzcX0AYfY8D-n5mB_hNA5wD6NYDOAXQOoHOAPDxjdZasL5L8rDEmtEf97Kcw5of8j-Y3IryXBQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>35410656</pqid></control><display><type>conference_proceeding</type><title>Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD</title><source>Scientific.net Journals</source><creator>Kordina, Olof ; Leone, Stefano ; Pedersen, Henrik ; Henry, Anne ; Janzén, Erik</creator><creatorcontrib>Kordina, Olof ; Leone, Stefano ; Pedersen, Henrik ; Henry, Anne ; Janzén, Erik</creatorcontrib><description>The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4H-SiC substrates. The use of chloride-based CVD has allowed growth of 100% 4H-SiC epitaxial layers with a growth rate of 20µm/h, thus about seven times higher than with standard precursors. It was also found that chlorine etches preferentially the 3C-SiC inclusions that tends to nucleate on Si-face on-axis substrates. Therefore the Cl/Si ratio is a fundamental process parameter to optimize.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.600-603.107</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><subject>Chemistry ; chloride-based CVD growth ; epilayers ; high growth rate ; Kemi ; NATURAL SCIENCES ; NATURVETENSKAP ; on-axis ; Si-face</subject><ispartof>Materials science forum, 2009, Vol.600-603, p.107-110</ispartof><rights>2009 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c544t-439b01c6f7d8b4105976ef93ae04b5c3632469724703e4aae9d06509103f4b983</citedby><orcidid>0000-0002-7171-5383</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/768?width=600</thumbnail><link.rule.ids>309,314,776,780,881,27902,27903</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15250$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Kordina, Olof</creatorcontrib><creatorcontrib>Leone, Stefano</creatorcontrib><creatorcontrib>Pedersen, Henrik</creatorcontrib><creatorcontrib>Henry, Anne</creatorcontrib><creatorcontrib>Janzén, Erik</creatorcontrib><title>Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD</title><title>Materials science forum</title><description>The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4H-SiC substrates. The use of chloride-based CVD has allowed growth of 100% 4H-SiC epitaxial layers with a growth rate of 20µm/h, thus about seven times higher than with standard precursors. It was also found that chlorine etches preferentially the 3C-SiC inclusions that tends to nucleate on Si-face on-axis substrates. Therefore the Cl/Si ratio is a fundamental process parameter to optimize.</description><subject>Chemistry</subject><subject>chloride-based CVD growth</subject><subject>epilayers</subject><subject>high growth rate</subject><subject>Kemi</subject><subject>NATURAL SCIENCES</subject><subject>NATURVETENSKAP</subject><subject>on-axis</subject><subject>Si-face</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqVkT1v2zAQQIWiBeqm_Q-cOhSlchQ_ZI2OXMcBUmRwnZWg6FPMQBZdkoLSf18WLpq5w-GWh4fDvaL4wqAUUC2v53kuo3U4Jtc7W46Yrr_vNqUCoAp4yaB-UyyYUhVtalm9LRZQSUmlqNX74kOMzwCcLZlaFPutP3k8u2RenBnIbfBzOhLfE7GlO9cSP5KHka5eXCQ7RzfGItlNXUzBJIxkH934RNrj4IM7IL0xEQ-kfVx_LN71Zoj46e--Kvabbz_aLb1_uL1rV_fUSiESFbzpgFnV14dlJxjIplbYN9wgiE5arnglVFNXogaOwhhsDqAkNAx4L7pmya-KrxdvnPE8dfoc3MmEX9obp9fucaV9eNKDmzSTlYSMf77g5-B_ThiTPrlocRjMiH6Kmst8hJIqgzcX0AYfY8D-n5mB_hNA5wD6NYDOAXQOoHOAPDxjdZasL5L8rDEmtEf97Kcw5of8j-Y3IryXBQ</recordid><startdate>20090101</startdate><enddate>20090101</enddate><creator>Kordina, Olof</creator><creator>Leone, Stefano</creator><creator>Pedersen, Henrik</creator><creator>Henry, Anne</creator><creator>Janzén, Erik</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>ADTPV</scope><scope>BNKNJ</scope><scope>DG8</scope><orcidid>https://orcid.org/0000-0002-7171-5383</orcidid></search><sort><creationdate>20090101</creationdate><title>Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD</title><author>Kordina, Olof ; Leone, Stefano ; Pedersen, Henrik ; Henry, Anne ; Janzén, Erik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c544t-439b01c6f7d8b4105976ef93ae04b5c3632469724703e4aae9d06509103f4b983</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Chemistry</topic><topic>chloride-based CVD growth</topic><topic>epilayers</topic><topic>high growth rate</topic><topic>Kemi</topic><topic>NATURAL SCIENCES</topic><topic>NATURVETENSKAP</topic><topic>on-axis</topic><topic>Si-face</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kordina, Olof</creatorcontrib><creatorcontrib>Leone, Stefano</creatorcontrib><creatorcontrib>Pedersen, Henrik</creatorcontrib><creatorcontrib>Henry, Anne</creatorcontrib><creatorcontrib>Janzén, Erik</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>SwePub</collection><collection>SwePub Conference</collection><collection>SWEPUB Linköpings universitet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kordina, Olof</au><au>Leone, Stefano</au><au>Pedersen, Henrik</au><au>Henry, Anne</au><au>Janzén, Erik</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD</atitle><btitle>Materials science forum</btitle><date>2009-01-01</date><risdate>2009</risdate><volume>600-603</volume><spage>107</spage><epage>110</epage><pages>107-110</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4H-SiC substrates. The use of chloride-based CVD has allowed growth of 100% 4H-SiC epitaxial layers with a growth rate of 20µm/h, thus about seven times higher than with standard precursors. It was also found that chlorine etches preferentially the 3C-SiC inclusions that tends to nucleate on Si-face on-axis substrates. Therefore the Cl/Si ratio is a fundamental process parameter to optimize.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.600-603.107</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-7171-5383</orcidid></addata></record>
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subjects	Chemistry chloride-based CVD growth epilayers high growth rate Kemi NATURAL SCIENCES NATURVETENSKAP on-axis Si-face
title	Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T09%3A27%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_swepu&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Homoepitaxial%20Growth%20of%204H-SiC%20on%20On-Axis%20Si-Face%20Substrates%20Using%20Chloride-Based%20CVD&rft.btitle=Materials%20science%20forum&rft.au=Kordina,%20Olof&rft.date=2009-01-01&rft.volume=600-603&rft.spage=107&rft.epage=110&rft.pages=107-110&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.600-603.107&rft_dat=%3Cproquest_swepu%3E35410656%3C/proquest_swepu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=35410656&rft_id=info:pmid/&rfr_iscdi=true