How to improve intrinsic and extrinsic reliability of vias by process optimization

A systematic study of various processes and their impact on intrinsic reliability has been performed on Cu dual damascene interconnects. The most significant improvement for intrinsic reliability is the ‘break-through’ liner. A strong impact on stressmigration (SM) was revealed using a HDP based SiN...

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Veröffentlicht in:	Microelectronic engineering 2008-10, Vol.85 (10), p.2123-2127
Hauptverfasser:	Penka, Sabine, Schulte, Susanne, Czekalla, Markus, Kriz, Jakob, Hommel, Martina
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cu interconnect Design. Technologies. Operation analysis. Testing Electromigration Electronics Exact sciences and technology Integrated circuits Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stressmigration
Online-Zugang:	Volltext
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