Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts
Two types of Schottky diodes were prepared on n -type silicon carbide (4H–SiC) substrates by deposition of ruthenium oxide (RuO 2 ) Schottky contacts or ruthenium tungsten oxide (RuWO x ) Schottky contacts. The RuO 2 /4H–SiC and RuWO x /4H–SiC Schottky barrier diodes were examined first by current–v...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science. Materials in electronics 2008, Vol.19 (8-9), p.783-787 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 787 |
|---|---|
| container_issue | 8-9 |
| container_start_page | 783 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 19 |
| creator | Buc, Dalibor Stuchlikova, Lubica Harmatha, Ladislav Hotovy, Ivan |
| description | Two types of Schottky diodes were prepared on
n
-type silicon carbide (4H–SiC) substrates by deposition of ruthenium oxide (RuO
2
) Schottky contacts or ruthenium tungsten oxide (RuWO
x
) Schottky contacts. The RuO
2
/4H–SiC and RuWO
x
/4H–SiC Schottky barrier diodes were examined first by current–voltage (
I-V
) measurements, which confirmed symmetry of the
I-V
characteristics. The ideality factor (
n
) is rather high (∼1.28/∼1.15) at the temperature 300 K, the current of saturation is
I
S
∼10 pA/∼7 pA and the Schottky barrier height is ∼1.13 eV/∼1.11 eV. After this diagnostic step, the samples were analysed by
C-V
and standard DLTS methods in the temperature range from 83 K to 450 K
.
In measured DLTS spectra were identified five deep levels ET1–ET5 (0.27, 0.45, 0.56, 0.58 and 0.85 eV) in RuO
2
/4H–SiC Schottky barrier diodes and three deep levels E1–E3 (0.36, 0.38 and 0.69 eV) in RuWO
x
/4H–SiC Schottky barrier diodes. |
| doi_str_mv | 10.1007/s10854-007-9409-z |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_miscellaneous_35375455</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>35375455</sourcerecordid><originalsourceid>FETCH-LOGICAL-p259t-b882e069e8e2f90ac444fccadf6a4e9c391ca6f889c6b2840308b437672a518e3</originalsourceid><addsrcrecordid>eNpFkM1KAzEUhYMoWKsP4C4b3Y1m8jOTLKVUKxQKVtFduM1kbOp0piYZtF35Dr6hT-LUFlzdD-7HgXMQOk_JVUpIfh1SIgVPOkwUJyrZHKBeKnKWcElfDlGPKJEnXFB6jE5CWBBCMs5kD8GwsiZ6Z6DCZg4eTLTebSC6psZNifno5-t76gZ4auZNjG9rXLimsAF_uDjHgB_aCcVQF3_4PPn890xTxy4tnKKjEqpgz_a3j55uh4-DUTKe3N0PbsbJigoVk5mU1JJMWWlpqQgYznlpDBRlBtwqw1RqICulVCabUckJI3LGWZ7lFEQqLeujy13uyjfvrQ1RL10wtqqgtk0bNBMsF1yITrzYixC62qWH2rigV94twa81ZXkXq2Tn0Z0Xulf9ar1eNK2vuw46JXq7ut6trre4XV1v2C8NJHZn</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>35375455</pqid></control><display><type>article</type><title>Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts</title><source>Springer Nature - Complete Springer Journals</source><creator>Buc, Dalibor ; Stuchlikova, Lubica ; Harmatha, Ladislav ; Hotovy, Ivan</creator><creatorcontrib>Buc, Dalibor ; Stuchlikova, Lubica ; Harmatha, Ladislav ; Hotovy, Ivan</creatorcontrib><description>Two types of Schottky diodes were prepared on
n
-type silicon carbide (4H–SiC) substrates by deposition of ruthenium oxide (RuO
2
) Schottky contacts or ruthenium tungsten oxide (RuWO
x
) Schottky contacts. The RuO
2
/4H–SiC and RuWO
x
/4H–SiC Schottky barrier diodes were examined first by current–voltage (
I-V
) measurements, which confirmed symmetry of the
I-V
characteristics. The ideality factor (
n
) is rather high (∼1.28/∼1.15) at the temperature 300 K, the current of saturation is
I
S
∼10 pA/∼7 pA and the Schottky barrier height is ∼1.13 eV/∼1.11 eV. After this diagnostic step, the samples were analysed by
C-V
and standard DLTS methods in the temperature range from 83 K to 450 K
.
In measured DLTS spectra were identified five deep levels ET1–ET5 (0.27, 0.45, 0.56, 0.58 and 0.85 eV) in RuO
2
/4H–SiC Schottky barrier diodes and three deep levels E1–E3 (0.36, 0.38 and 0.69 eV) in RuWO
x
/4H–SiC Schottky barrier diodes.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-007-9409-z</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Applied sciences ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Diodes ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronics ; Exact sciences and technology ; Interfaces ; Materials Science ; Optical and Electronic Materials ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Surface double layers, schottky barriers, and work functions</subject><ispartof>Journal of materials science. Materials in electronics, 2008, Vol.19 (8-9), p.783-787</ispartof><rights>Springer Science+Business Media, LLC 2007</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-007-9409-z$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-007-9409-z$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,23910,23911,25119,27903,27904,41467,42536,51297</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23743798$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Buc, Dalibor</creatorcontrib><creatorcontrib>Stuchlikova, Lubica</creatorcontrib><creatorcontrib>Harmatha, Ladislav</creatorcontrib><creatorcontrib>Hotovy, Ivan</creatorcontrib><title>Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Two types of Schottky diodes were prepared on
n
-type silicon carbide (4H–SiC) substrates by deposition of ruthenium oxide (RuO
2
) Schottky contacts or ruthenium tungsten oxide (RuWO
x
) Schottky contacts. The RuO
2
/4H–SiC and RuWO
x
/4H–SiC Schottky barrier diodes were examined first by current–voltage (
I-V
) measurements, which confirmed symmetry of the
I-V
characteristics. The ideality factor (
n
) is rather high (∼1.28/∼1.15) at the temperature 300 K, the current of saturation is
I
S
∼10 pA/∼7 pA and the Schottky barrier height is ∼1.13 eV/∼1.11 eV. After this diagnostic step, the samples were analysed by
C-V
and standard DLTS methods in the temperature range from 83 K to 450 K
.
In measured DLTS spectra were identified five deep levels ET1–ET5 (0.27, 0.45, 0.56, 0.58 and 0.85 eV) in RuO
2
/4H–SiC Schottky barrier diodes and three deep levels E1–E3 (0.36, 0.38 and 0.69 eV) in RuWO
x
/4H–SiC Schottky barrier diodes.</description><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Diodes</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Interfaces</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Surface double layers, schottky barriers, and work functions</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNpFkM1KAzEUhYMoWKsP4C4b3Y1m8jOTLKVUKxQKVtFduM1kbOp0piYZtF35Dr6hT-LUFlzdD-7HgXMQOk_JVUpIfh1SIgVPOkwUJyrZHKBeKnKWcElfDlGPKJEnXFB6jE5CWBBCMs5kD8GwsiZ6Z6DCZg4eTLTebSC6psZNifno5-t76gZ4auZNjG9rXLimsAF_uDjHgB_aCcVQF3_4PPn890xTxy4tnKKjEqpgz_a3j55uh4-DUTKe3N0PbsbJigoVk5mU1JJMWWlpqQgYznlpDBRlBtwqw1RqICulVCabUckJI3LGWZ7lFEQqLeujy13uyjfvrQ1RL10wtqqgtk0bNBMsF1yITrzYixC62qWH2rigV94twa81ZXkXq2Tn0Z0Xulf9ar1eNK2vuw46JXq7ut6trre4XV1v2C8NJHZn</recordid><startdate>2008</startdate><enddate>2008</enddate><creator>Buc, Dalibor</creator><creator>Stuchlikova, Lubica</creator><creator>Harmatha, Ladislav</creator><creator>Hotovy, Ivan</creator><general>Springer US</general><general>Springer</general><scope>IQODW</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2008</creationdate><title>Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts</title><author>Buc, Dalibor ; Stuchlikova, Lubica ; Harmatha, Ladislav ; Hotovy, Ivan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p259t-b882e069e8e2f90ac444fccadf6a4e9c391ca6f889c6b2840308b437672a518e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Diodes</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Interfaces</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Surface double layers, schottky barriers, and work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Buc, Dalibor</creatorcontrib><creatorcontrib>Stuchlikova, Lubica</creatorcontrib><creatorcontrib>Harmatha, Ladislav</creatorcontrib><creatorcontrib>Hotovy, Ivan</creatorcontrib><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Buc, Dalibor</au><au>Stuchlikova, Lubica</au><au>Harmatha, Ladislav</au><au>Hotovy, Ivan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2008</date><risdate>2008</risdate><volume>19</volume><issue>8-9</issue><spage>783</spage><epage>787</epage><pages>783-787</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Two types of Schottky diodes were prepared on
n
-type silicon carbide (4H–SiC) substrates by deposition of ruthenium oxide (RuO
2
) Schottky contacts or ruthenium tungsten oxide (RuWO
x
) Schottky contacts. The RuO
2
/4H–SiC and RuWO
x
/4H–SiC Schottky barrier diodes were examined first by current–voltage (
I-V
) measurements, which confirmed symmetry of the
I-V
characteristics. The ideality factor (
n
) is rather high (∼1.28/∼1.15) at the temperature 300 K, the current of saturation is
I
S
∼10 pA/∼7 pA and the Schottky barrier height is ∼1.13 eV/∼1.11 eV. After this diagnostic step, the samples were analysed by
C-V
and standard DLTS methods in the temperature range from 83 K to 450 K
.
In measured DLTS spectra were identified five deep levels ET1–ET5 (0.27, 0.45, 0.56, 0.58 and 0.85 eV) in RuO
2
/4H–SiC Schottky barrier diodes and three deep levels E1–E3 (0.36, 0.38 and 0.69 eV) in RuWO
x
/4H–SiC Schottky barrier diodes.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10854-007-9409-z</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2008, Vol.19 (8-9), p.783-787 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35375455 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: electronic structure, electrical, magnetic, and optical properties Diodes Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Interfaces Materials Science Optical and Electronic Materials Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface double layers, schottky barriers, and work functions |
| title | Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T22%3A02%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20characterization%20of%204H%E2%80%93SiC%20Schottky%20diodes%20with%20a%20RuO2%20and%20a%20RuWOx%20Schottky%20contacts&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=Buc,%20Dalibor&rft.date=2008&rft.volume=19&rft.issue=8-9&rft.spage=783&rft.epage=787&rft.pages=783-787&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-007-9409-z&rft_dat=%3Cproquest_pasca%3E35375455%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=35375455&rft_id=info:pmid/&rfr_iscdi=true |