Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate

High-quality GaN layer was successfully grown on a SiO2 nanorod-array patterned sapphire substrate (NAPSS) using metal-organic chemical vapor deposition by a nanoscaled epitaxial lateral overgrowth (NELO) method. From tunneling electron microscope images, well coalescence and turned dislocations are...

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Veröffentlicht in:	Journal of crystal growth 2008-11, Vol.310 (23), p.5170-5174
Hauptverfasser:	CHIU, C. H, LI, Zhen-Yu, CHAO, C. L, LO, M. H, KUO, H. C, YU, P. C, LU, T. C, WANG, S. C, LAU, K. M, CHENG, S. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Optoelectronic devices Other topics in nanoscale materials and structures Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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