Effects of the electric bias on the deposition behavior of silicon films on glass during hot-wire chemical vapor deposition

Hydrogenated microcrystalline silicon (μc-Si:H) thin films were deposited on the glass substrate at the applied electric biases of −200, 0 and +200 V on the substrate holder at the filament temperature of 1700 °C and the substrate temperature of 300 °C. At the electric biases of −200, 0 and +200 V,...

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Veröffentlicht in:Journal of crystal growth 2008-09, Vol.310 (19), p.4368-4372
Hauptverfasser: Lee, Dong-Kwon, Chung, Yung-Bin, Kim, Joong-Kyu, Hwang, Nong-Moon
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Sprache:eng
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