Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes (SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from 4.0x1015 to 5.7x1015 cm-3 was evaluated. It was found that the Schottky barrier height (Φb) can be stabilized b...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 982 |
|---|---|
| container_issue | |
| container_start_page | 979 |
| container_title | |
| container_volume | 600-603 |
| creator | Shikama, Shozo Matsuno, Yoshinori Sumitani, Hiroaki Kuroda, Kenichi Yutani, Naoki Ohtsuka, Kenichi |
| description | The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes
(SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from
4.0x1015 to 5.7x1015 cm-3
was evaluated. It was found that the Schottky barrier height (Φb) can be
stabilized by Ti sintering process and the forward current (IF) abruptly rises at the same knee voltage
for all samples. On the other hand, the on-resistance (Ron) and VF were dispersed. The instability
corresponds to the values calculated by the dispersion of ND, substrate resistivity and substrate
thickness. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.600-603.979 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_35348937</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>35348937</sourcerecordid><originalsourceid>FETCH-LOGICAL-c376t-4c4087bc98b634670a29a7eee85754b135fe6ab8483d3123588be41a2dd7cbdd3</originalsourceid><addsrcrecordid>eNqVkE1LAzEQhoMoWKv_YU8ehN1mN5971NaqoCi0FW8hm51to3WjSUrpvzelgmcPwzAvLw_Mg9BViQuKKznabrdFMBb6aDtrih7i6Gk2LTjGOcekqEV9hAYl51VeC1YdowGuGMsZFfwUnYXwjjEpZckH6G1iQ_S22UTr-sx12dT5rfZt9urWUS9hH83sOJuZlYvxY5fdaO8t-GxiXQvZIth-mc1t6vQR_P548c5ACOfopNPrABe_e4gW09v5-D5_fL57GF8_5oYIHnNqKJaiMbVsOKFcYF3VWgCAZILRpiSsA64bSSVpSVkRJmUDtNRV2wrTtC0ZossD98u77w2EqD5tMLBe6x7cJijCCJU1Eal4cyga70Lw0Kkvbz-136kSq71UlaSqP6kqSVVJqkpS0xCVpCbI5ACJXvchglmpd7fxffrwP5gfZ7KLLQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>35348937</pqid></control><display><type>conference_proceeding</type><title>Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process</title><source>Scientific.net Journals</source><creator>Shikama, Shozo ; Matsuno, Yoshinori ; Sumitani, Hiroaki ; Kuroda, Kenichi ; Yutani, Naoki ; Ohtsuka, Kenichi</creator><creatorcontrib>Shikama, Shozo ; Matsuno, Yoshinori ; Sumitani, Hiroaki ; Kuroda, Kenichi ; Yutani, Naoki ; Ohtsuka, Kenichi</creatorcontrib><description>The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes
(SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from
4.0x1015 to 5.7x1015 cm-3
was evaluated. It was found that the Schottky barrier height (Φb) can be
stabilized by Ti sintering process and the forward current (IF) abruptly rises at the same knee voltage
for all samples. On the other hand, the on-resistance (Ron) and VF were dispersed. The instability
corresponds to the values calculated by the dispersion of ND, substrate resistivity and substrate
thickness.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.600-603.979</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2009, Vol.600-603, p.979-982</ispartof><rights>2009 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/768?width=600</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Shikama, Shozo</creatorcontrib><creatorcontrib>Matsuno, Yoshinori</creatorcontrib><creatorcontrib>Sumitani, Hiroaki</creatorcontrib><creatorcontrib>Kuroda, Kenichi</creatorcontrib><creatorcontrib>Yutani, Naoki</creatorcontrib><creatorcontrib>Ohtsuka, Kenichi</creatorcontrib><title>Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process</title><title>Materials science forum</title><description>The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes
(SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from
4.0x1015 to 5.7x1015 cm-3
was evaluated. It was found that the Schottky barrier height (Φb) can be
stabilized by Ti sintering process and the forward current (IF) abruptly rises at the same knee voltage
for all samples. On the other hand, the on-resistance (Ron) and VF were dispersed. The instability
corresponds to the values calculated by the dispersion of ND, substrate resistivity and substrate
thickness.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqVkE1LAzEQhoMoWKv_YU8ehN1mN5971NaqoCi0FW8hm51to3WjSUrpvzelgmcPwzAvLw_Mg9BViQuKKznabrdFMBb6aDtrih7i6Gk2LTjGOcekqEV9hAYl51VeC1YdowGuGMsZFfwUnYXwjjEpZckH6G1iQ_S22UTr-sx12dT5rfZt9urWUS9hH83sOJuZlYvxY5fdaO8t-GxiXQvZIth-mc1t6vQR_P548c5ACOfopNPrABe_e4gW09v5-D5_fL57GF8_5oYIHnNqKJaiMbVsOKFcYF3VWgCAZILRpiSsA64bSSVpSVkRJmUDtNRV2wrTtC0ZossD98u77w2EqD5tMLBe6x7cJijCCJU1Eal4cyga70Lw0Kkvbz-136kSq71UlaSqP6kqSVVJqkpS0xCVpCbI5ACJXvchglmpd7fxffrwP5gfZ7KLLQ</recordid><startdate>20090101</startdate><enddate>20090101</enddate><creator>Shikama, Shozo</creator><creator>Matsuno, Yoshinori</creator><creator>Sumitani, Hiroaki</creator><creator>Kuroda, Kenichi</creator><creator>Yutani, Naoki</creator><creator>Ohtsuka, Kenichi</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090101</creationdate><title>Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process</title><author>Shikama, Shozo ; Matsuno, Yoshinori ; Sumitani, Hiroaki ; Kuroda, Kenichi ; Yutani, Naoki ; Ohtsuka, Kenichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-4c4087bc98b634670a29a7eee85754b135fe6ab8483d3123588be41a2dd7cbdd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shikama, Shozo</creatorcontrib><creatorcontrib>Matsuno, Yoshinori</creatorcontrib><creatorcontrib>Sumitani, Hiroaki</creatorcontrib><creatorcontrib>Kuroda, Kenichi</creatorcontrib><creatorcontrib>Yutani, Naoki</creatorcontrib><creatorcontrib>Ohtsuka, Kenichi</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shikama, Shozo</au><au>Matsuno, Yoshinori</au><au>Sumitani, Hiroaki</au><au>Kuroda, Kenichi</au><au>Yutani, Naoki</au><au>Ohtsuka, Kenichi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process</atitle><btitle>Materials science forum</btitle><date>2009-01-01</date><risdate>2009</risdate><volume>600-603</volume><spage>979</spage><epage>982</epage><pages>979-982</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes
(SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from
4.0x1015 to 5.7x1015 cm-3
was evaluated. It was found that the Schottky barrier height (Φb) can be
stabilized by Ti sintering process and the forward current (IF) abruptly rises at the same knee voltage
for all samples. On the other hand, the on-resistance (Ron) and VF were dispersed. The instability
corresponds to the values calculated by the dispersion of ND, substrate resistivity and substrate
thickness.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.600-603.979</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0255-5476 |
| ispartof | Materials science forum, 2009, Vol.600-603, p.979-982 |
| issn | 0255-5476 1662-9752 1662-9752 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35348937 |
| source | Scientific.net Journals |
| title | Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T09%3A39%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Distribution%20of%20Forward%20Voltage%20of%20SiC%20Schottky%20Barrier%20Diode%20Using%20Ti%20Sintering%20Process&rft.btitle=Materials%20science%20forum&rft.au=Shikama,%20Shozo&rft.date=2009-01-01&rft.volume=600-603&rft.spage=979&rft.epage=982&rft.pages=979-982&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.600-603.979&rft_dat=%3Cproquest_cross%3E35348937%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=35348937&rft_id=info:pmid/&rfr_iscdi=true |