Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC

The understanding of the structure and associated defect level of point defects in SiC is important because the material is to be used both as a semiconductor and semi-insulator. Production of the latter is achieved by compensation of unavoidable impurities using defects that require more energy for...

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Bibliographische Detailangaben

Hauptverfasser:	Skowronski, Marek, Chung, H.J., Glaser, E.R., Polyakov, A.Y., Zvanut, Mary Ellen, Ngetich, G., Garces, N.Y.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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