Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing

The temperature dependence of the hole concentration p(T) in Al-doped p-type 6H-SiC irradiated by 100 or 200keV electrons is investigated. Since p(T) is unchanged by 100keV electron irradiation, the threshold displacement energy in SiC is higher than 20eV. Therefore, 200keV electrons cannot displace...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2009-12, Vol.404 (23-24), p.4755-4757
Hauptverfasser:	Matsuura, Hideharu, Yanagisawa, Hideki, Nishino, Kozo, Myojin, Yoshiko, Nojiri, Takunori, Matsuyama, Yukei, Ohshima, Takeshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Al-doped 6H-SiC Annealing Electron irradiation Radiation damage
Online-Zugang:	Volltext
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