Temperature effect on charge density of silicon nitride films deposited in SiH4–NH3–N2 plasma
Improved surface passivation of silicon nitride films requires a high positive charge density. A neural network model of SiN charge density was used to investigate temperature effects on charge density. For a systematic modeling, the deposition process was characterized by means of a face-centered B...
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| Veröffentlicht in: | Surface & coatings technology 2008-08, Vol.202 (22-23), p.5539-5542 |
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| container_issue | 22-23 |
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| container_title | Surface & coatings technology |
| container_volume | 202 |
| creator | Kim, Byungwhan Kwon, Sang Hee |
| description | Improved surface passivation of silicon nitride films requires a high positive charge density. A neural network model of SiN charge density was used to investigate temperature effects on charge density. For a systematic modeling, the deposition process was characterized by means of a face-centered Box Wilson experiment. Prediction performance of neural network model was optimized by using genetic algorithm. Interestingly, charge density was varied little with the substrate temperature regardless of SiH4 flow rates. Charge density variation was not sensitive to [Si–H] variation. A pronounced temperature effect at higher NH3 flow rate or lower radio frequency (rf) power was attributed to a relatively large [N–H]. For NH3 or rf power variation, charge density was strongly correlated to [N–H]/[Si–H]. |
| doi_str_mv | 10.1016/j.surfcoat.2008.06.030 |
| format | Article |
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A neural network model of SiN charge density was used to investigate temperature effects on charge density. For a systematic modeling, the deposition process was characterized by means of a face-centered Box Wilson experiment. Prediction performance of neural network model was optimized by using genetic algorithm. Interestingly, charge density was varied little with the substrate temperature regardless of SiH4 flow rates. Charge density variation was not sensitive to [Si–H] variation. A pronounced temperature effect at higher NH3 flow rate or lower radio frequency (rf) power was attributed to a relatively large [N–H]. For NH3 or rf power variation, charge density was strongly correlated to [N–H]/[Si–H].</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/j.surfcoat.2008.06.030</identifier><identifier>CODEN: SCTEEJ</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Charge density ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Generalized regression neural network ; Materials science ; Physics ; Plasma enhanced chemical vapor deposition ; SiH4 ; Silicon nitride film ; Surface treatments ; Temperature</subject><ispartof>Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5539-5542</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c288t-29b5c74c203c202b927d5c16fb24b53ad4d63db9e385e9926753fb8699d67fe83</citedby><cites>FETCH-LOGICAL-c288t-29b5c74c203c202b927d5c16fb24b53ad4d63db9e385e9926753fb8699d67fe83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.surfcoat.2008.06.030$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20787473$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Byungwhan</creatorcontrib><creatorcontrib>Kwon, Sang Hee</creatorcontrib><title>Temperature effect on charge density of silicon nitride films deposited in SiH4–NH3–N2 plasma</title><title>Surface & coatings technology</title><description>Improved surface passivation of silicon nitride films requires a high positive charge density. 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For NH3 or rf power variation, charge density was strongly correlated to [N–H]/[Si–H].</description><subject>Charge density</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Generalized regression neural network</subject><subject>Materials science</subject><subject>Physics</subject><subject>Plasma enhanced chemical vapor deposition</subject><subject>SiH4</subject><subject>Silicon nitride film</subject><subject>Surface treatments</subject><subject>Temperature</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkEtOHDEQQC0UJCaEKyBvkl13_On2Z5cIARNplCwY1pbbLoNH_YvdE4kdd8gNOQkeDWGbRVUt6lWV6iF0SUlNCRVfd3Xep-Amu9SMEFUTURNOTtCKKqkrzhv5Aa0Ia2WltGRn6GPOO0IIlbpZIbuFYYZkl30CDCGAW_A0Yvdo0wNgD2OOyxOeAs6xj650xrik6AGH2A-5APNUCPA4jvgurpuX578_1_yQGZ57mwf7CZ0G22e4eKvn6P7menu1rja_bn9cfd9Ujim1VEx3rZONY4SXYJ1m0reOitCxpmu59Y0X3HcauGpBayZky0OnhNZeyACKn6Mvx71zmn7vIS9miNlB39sRpn02vGWMUaoLKI6gS1POCYKZUxxsejKUmINRszP_jJqDUUOEKUbL4Oe3CzY724dkRxfz-zQjUslG8sJ9O3JQ3v0TIZnsIowOfEzFr_FT_N-pV81_kbU</recordid><startdate>20080830</startdate><enddate>20080830</enddate><creator>Kim, Byungwhan</creator><creator>Kwon, Sang Hee</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080830</creationdate><title>Temperature effect on charge density of silicon nitride films deposited in SiH4–NH3–N2 plasma</title><author>Kim, Byungwhan ; Kwon, Sang Hee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-29b5c74c203c202b927d5c16fb24b53ad4d63db9e385e9926753fb8699d67fe83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Charge density</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Generalized regression neural network</topic><topic>Materials science</topic><topic>Physics</topic><topic>Plasma enhanced chemical vapor deposition</topic><topic>SiH4</topic><topic>Silicon nitride film</topic><topic>Surface treatments</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Byungwhan</creatorcontrib><creatorcontrib>Kwon, Sang Hee</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Surface & coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Byungwhan</au><au>Kwon, Sang Hee</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature effect on charge density of silicon nitride films deposited in SiH4–NH3–N2 plasma</atitle><jtitle>Surface & coatings technology</jtitle><date>2008-08-30</date><risdate>2008</risdate><volume>202</volume><issue>22-23</issue><spage>5539</spage><epage>5542</epage><pages>5539-5542</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><coden>SCTEEJ</coden><abstract>Improved surface passivation of silicon nitride films requires a high positive charge density. 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| issn | 0257-8972 1879-3347 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Charge density Cross-disciplinary physics: materials science rheology Exact sciences and technology Generalized regression neural network Materials science Physics Plasma enhanced chemical vapor deposition SiH4 Silicon nitride film Surface treatments Temperature |
| title | Temperature effect on charge density of silicon nitride films deposited in SiH4–NH3–N2 plasma |
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