Top-emitting organic light-emitting diodes based on semitransparent conducting cathode of Ba/Al/ITO

Top-emitting organic light-emitting diodes (TEOLEDs) with a thin semitransparent conducting cathode (STCC) of Ba/Al/ITO were fabricated and their electrical/optical characteristics were investigated. At the wavelength of 519 nm, optical properties of STCC of the Ba (5 nm)/Al (10 nm)/ITO (100 nm) str...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Surface & coatings technology 2008-08, Vol.202 (22-23), p.5646-5649
Hauptverfasser: Lim, J.T., Lee, J.H., Park, J.K., Park, B.J., Yeom, G.Y.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 5649
container_issue 22-23
container_start_page 5646
container_title Surface & coatings technology
container_volume 202
creator Lim, J.T.
Lee, J.H.
Park, J.K.
Park, B.J.
Yeom, G.Y.
description Top-emitting organic light-emitting diodes (TEOLEDs) with a thin semitransparent conducting cathode (STCC) of Ba/Al/ITO were fabricated and their electrical/optical characteristics were investigated. At the wavelength of 519 nm, optical properties of STCC of the Ba (5 nm)/Al (10 nm)/ITO (100 nm) structure showed the transmittance of 75% and the reflectance of 13%. The light out-coupling properties of the TEOLED, which is consisted of glass/Ag (100 nm)/ITO (125 nm)/4,4′,4″-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4′-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/tris(8-quinolinolato)aluminum (III) (Alq3, 62 nm)/Ba (x nm, x=15, 10, and 5 nm)/Al (10 nm)/ITO (100 nm), was increased as the deposition thickness of Ba is reduced. This driving performance of the devices could be interpreted on the base of carrier injection barrier by Fowler–Nordheim tunneling theory as well as the optical properties of the cathode. A constant barrier height of 0.4 eV was obtained for all the devices regardless of the cathode structure composed of Ba (x nm)/Al (10 nm)/ITO (100 nm), which indicates the electron-only devices where the injection barrier is at the ITO/2-TNATA interface.
doi_str_mv 10.1016/j.surfcoat.2008.06.036
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_35210181</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0257897208005240</els_id><sourcerecordid>35210181</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-7ee4e083ee86ef88aaee9cba1923016da8cf5a72f82c993e64d50e0d89685bc83</originalsourceid><addsrcrecordid>eNqFkMlOwzAQQC0EEmX5BZQL3JI6cRLbNxaxSUhcytmajifFVRoX20Xi70kpy5HTSDNvtsfYWcmLkpftdFnETejQQyoqzlXB24KLdo9NSiV1LkQt99mEV43MlZbVITuKcck5L6WuJwxnfp3TyqXkhkXmwwIGh1nvFq_pL22dtxSzOUSymR-yuK0EGOIaAg0pQz_YDX6hCOl1hDPfZdcwveqnj7PnE3bQQR_p9Dses5e729nNQ_70fP94c_WUo5Ai5ZKoJq4EkWqpUwqASOMcSl2J8U8LCrsGZNWpCrUW1Na24cSt0q1q5qjEMbvYzV0H_7ahmMzKRaS-h4H8JhrRVKMwVY5guwMx-BgDdWYd3ArChym52To1S_Pj1GydGt6a0enYeP69ASJC340O0MXf7opLJWu9veRyx9H47rujYCI6GpCsC4TJWO_-W_UJzfKSXQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>35210181</pqid></control><display><type>article</type><title>Top-emitting organic light-emitting diodes based on semitransparent conducting cathode of Ba/Al/ITO</title><source>Elsevier ScienceDirect Journals</source><creator>Lim, J.T. ; Lee, J.H. ; Park, J.K. ; Park, B.J. ; Yeom, G.Y.</creator><creatorcontrib>Lim, J.T. ; Lee, J.H. ; Park, J.K. ; Park, B.J. ; Yeom, G.Y.</creatorcontrib><description>Top-emitting organic light-emitting diodes (TEOLEDs) with a thin semitransparent conducting cathode (STCC) of Ba/Al/ITO were fabricated and their electrical/optical characteristics were investigated. At the wavelength of 519 nm, optical properties of STCC of the Ba (5 nm)/Al (10 nm)/ITO (100 nm) structure showed the transmittance of 75% and the reflectance of 13%. The light out-coupling properties of the TEOLED, which is consisted of glass/Ag (100 nm)/ITO (125 nm)/4,4′,4″-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4′-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/tris(8-quinolinolato)aluminum (III) (Alq3, 62 nm)/Ba (x nm, x=15, 10, and 5 nm)/Al (10 nm)/ITO (100 nm), was increased as the deposition thickness of Ba is reduced. This driving performance of the devices could be interpreted on the base of carrier injection barrier by Fowler–Nordheim tunneling theory as well as the optical properties of the cathode. A constant barrier height of 0.4 eV was obtained for all the devices regardless of the cathode structure composed of Ba (x nm)/Al (10 nm)/ITO (100 nm), which indicates the electron-only devices where the injection barrier is at the ITO/2-TNATA interface.</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/j.surfcoat.2008.06.036</identifier><identifier>CODEN: SCTEEJ</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Barium ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; OLEDs ; Physics ; Semitransparent conducting cathode ; Surface treatments ; Top emission ; Work function</subject><ispartof>Surface &amp; coatings technology, 2008-08, Vol.202 (22-23), p.5646-5649</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-7ee4e083ee86ef88aaee9cba1923016da8cf5a72f82c993e64d50e0d89685bc83</citedby><cites>FETCH-LOGICAL-c373t-7ee4e083ee86ef88aaee9cba1923016da8cf5a72f82c993e64d50e0d89685bc83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0257897208005240$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=20787498$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lim, J.T.</creatorcontrib><creatorcontrib>Lee, J.H.</creatorcontrib><creatorcontrib>Park, J.K.</creatorcontrib><creatorcontrib>Park, B.J.</creatorcontrib><creatorcontrib>Yeom, G.Y.</creatorcontrib><title>Top-emitting organic light-emitting diodes based on semitransparent conducting cathode of Ba/Al/ITO</title><title>Surface &amp; coatings technology</title><description>Top-emitting organic light-emitting diodes (TEOLEDs) with a thin semitransparent conducting cathode (STCC) of Ba/Al/ITO were fabricated and their electrical/optical characteristics were investigated. At the wavelength of 519 nm, optical properties of STCC of the Ba (5 nm)/Al (10 nm)/ITO (100 nm) structure showed the transmittance of 75% and the reflectance of 13%. The light out-coupling properties of the TEOLED, which is consisted of glass/Ag (100 nm)/ITO (125 nm)/4,4′,4″-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4′-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/tris(8-quinolinolato)aluminum (III) (Alq3, 62 nm)/Ba (x nm, x=15, 10, and 5 nm)/Al (10 nm)/ITO (100 nm), was increased as the deposition thickness of Ba is reduced. This driving performance of the devices could be interpreted on the base of carrier injection barrier by Fowler–Nordheim tunneling theory as well as the optical properties of the cathode. A constant barrier height of 0.4 eV was obtained for all the devices regardless of the cathode structure composed of Ba (x nm)/Al (10 nm)/ITO (100 nm), which indicates the electron-only devices where the injection barrier is at the ITO/2-TNATA interface.</description><subject>Barium</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>OLEDs</subject><subject>Physics</subject><subject>Semitransparent conducting cathode</subject><subject>Surface treatments</subject><subject>Top emission</subject><subject>Work function</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkMlOwzAQQC0EEmX5BZQL3JI6cRLbNxaxSUhcytmajifFVRoX20Xi70kpy5HTSDNvtsfYWcmLkpftdFnETejQQyoqzlXB24KLdo9NSiV1LkQt99mEV43MlZbVITuKcck5L6WuJwxnfp3TyqXkhkXmwwIGh1nvFq_pL22dtxSzOUSymR-yuK0EGOIaAg0pQz_YDX6hCOl1hDPfZdcwveqnj7PnE3bQQR_p9Dses5e729nNQ_70fP94c_WUo5Ai5ZKoJq4EkWqpUwqASOMcSl2J8U8LCrsGZNWpCrUW1Na24cSt0q1q5qjEMbvYzV0H_7ahmMzKRaS-h4H8JhrRVKMwVY5guwMx-BgDdWYd3ArChym52To1S_Pj1GydGt6a0enYeP69ASJC340O0MXf7opLJWu9veRyx9H47rujYCI6GpCsC4TJWO_-W_UJzfKSXQ</recordid><startdate>20080830</startdate><enddate>20080830</enddate><creator>Lim, J.T.</creator><creator>Lee, J.H.</creator><creator>Park, J.K.</creator><creator>Park, B.J.</creator><creator>Yeom, G.Y.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080830</creationdate><title>Top-emitting organic light-emitting diodes based on semitransparent conducting cathode of Ba/Al/ITO</title><author>Lim, J.T. ; Lee, J.H. ; Park, J.K. ; Park, B.J. ; Yeom, G.Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-7ee4e083ee86ef88aaee9cba1923016da8cf5a72f82c993e64d50e0d89685bc83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Barium</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>OLEDs</topic><topic>Physics</topic><topic>Semitransparent conducting cathode</topic><topic>Surface treatments</topic><topic>Top emission</topic><topic>Work function</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lim, J.T.</creatorcontrib><creatorcontrib>Lee, J.H.</creatorcontrib><creatorcontrib>Park, J.K.</creatorcontrib><creatorcontrib>Park, B.J.</creatorcontrib><creatorcontrib>Yeom, G.Y.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Surface &amp; coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lim, J.T.</au><au>Lee, J.H.</au><au>Park, J.K.</au><au>Park, B.J.</au><au>Yeom, G.Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Top-emitting organic light-emitting diodes based on semitransparent conducting cathode of Ba/Al/ITO</atitle><jtitle>Surface &amp; coatings technology</jtitle><date>2008-08-30</date><risdate>2008</risdate><volume>202</volume><issue>22-23</issue><spage>5646</spage><epage>5649</epage><pages>5646-5649</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><coden>SCTEEJ</coden><abstract>Top-emitting organic light-emitting diodes (TEOLEDs) with a thin semitransparent conducting cathode (STCC) of Ba/Al/ITO were fabricated and their electrical/optical characteristics were investigated. At the wavelength of 519 nm, optical properties of STCC of the Ba (5 nm)/Al (10 nm)/ITO (100 nm) structure showed the transmittance of 75% and the reflectance of 13%. The light out-coupling properties of the TEOLED, which is consisted of glass/Ag (100 nm)/ITO (125 nm)/4,4′,4″-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4′-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/tris(8-quinolinolato)aluminum (III) (Alq3, 62 nm)/Ba (x nm, x=15, 10, and 5 nm)/Al (10 nm)/ITO (100 nm), was increased as the deposition thickness of Ba is reduced. This driving performance of the devices could be interpreted on the base of carrier injection barrier by Fowler–Nordheim tunneling theory as well as the optical properties of the cathode. A constant barrier height of 0.4 eV was obtained for all the devices regardless of the cathode structure composed of Ba (x nm)/Al (10 nm)/ITO (100 nm), which indicates the electron-only devices where the injection barrier is at the ITO/2-TNATA interface.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.surfcoat.2008.06.036</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0257-8972
ispartof Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5646-5649
issn 0257-8972
1879-3347
language eng
recordid cdi_proquest_miscellaneous_35210181
source Elsevier ScienceDirect Journals
subjects Barium
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
OLEDs
Physics
Semitransparent conducting cathode
Surface treatments
Top emission
Work function
title Top-emitting organic light-emitting diodes based on semitransparent conducting cathode of Ba/Al/ITO
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T05%3A40%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Top-emitting%20organic%20light-emitting%20diodes%20based%20on%20semitransparent%20conducting%20cathode%20of%20Ba/Al/ITO&rft.jtitle=Surface%20&%20coatings%20technology&rft.au=Lim,%20J.T.&rft.date=2008-08-30&rft.volume=202&rft.issue=22-23&rft.spage=5646&rft.epage=5649&rft.pages=5646-5649&rft.issn=0257-8972&rft.eissn=1879-3347&rft.coden=SCTEEJ&rft_id=info:doi/10.1016/j.surfcoat.2008.06.036&rft_dat=%3Cproquest_cross%3E35210181%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=35210181&rft_id=info:pmid/&rft_els_id=S0257897208005240&rfr_iscdi=true