Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor

The melt-quenched Sn 10 Sb 20 Se 70 sample in the bulk form was used to prepare films on well-cleaned glass substrates by thermal evaporation method. The activation energy for glass transition (apparent) and crystallization has been analyzed by using the Kissinger formulation. The X-ray diffraction...

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Veröffentlicht in:	Journal of materials science 2008-09, Vol.43 (18), p.6099-6104
Hauptverfasser:	Kumar, Praveen, Thangaraj, R., Stephen Sathiaraj, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous semiconductors glasses Annealing Applied sciences Building materials. Ceramics. Glasses Characterization and Evaluation of Materials Chemical industry and chemicals Classical Mechanics Condensed matter: electronic structure, electrical, magnetic, and optical properties Crystallization Crystallography and Scattering Methods Electrical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Glass substrates Glass transition temperature Glasses Globules Manufacture Materials Science Optical properties Physics Polymer Sciences Solid Mechanics Temperature Temperature dependence Thermal analysis X-ray diffraction
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