Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor
The melt-quenched Sn 10 Sb 20 Se 70 sample in the bulk form was used to prepare films on well-cleaned glass substrates by thermal evaporation method. The activation energy for glass transition (apparent) and crystallization has been analyzed by using the Kissinger formulation. The X-ray diffraction...
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| Veröffentlicht in: | Journal of materials science 2008-09, Vol.43 (18), p.6099-6104 |
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| creator | Kumar, Praveen Thangaraj, R. Stephen Sathiaraj, T. |
| description | The melt-quenched Sn
10
Sb
20
Se
70
sample in the bulk form was used to prepare films on well-cleaned glass substrates by thermal evaporation method. The activation energy for glass transition (apparent) and crystallization has been analyzed by using the Kissinger formulation. The X-ray diffraction study shows the crystallization of Sb
2
Se
3
phase in the major proportion as compared to the SnSe
2
phase. The SEM images film of the show the appearance of spherical globules upon annealing below the glass transition temperature. The effect of annealing temperature on the electrical and optical properties has been studied. A linear fit between Δ
E
and
E
o
is observed, indicating the validity of Meyer–Neldel rule with the change in the annealing temperature. |
| doi_str_mv | 10.1007/s10853-008-2948-8 |
| format | Article |
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10
Sb
20
Se
70
sample in the bulk form was used to prepare films on well-cleaned glass substrates by thermal evaporation method. The activation energy for glass transition (apparent) and crystallization has been analyzed by using the Kissinger formulation. The X-ray diffraction study shows the crystallization of Sb
2
Se
3
phase in the major proportion as compared to the SnSe
2
phase. The SEM images film of the show the appearance of spherical globules upon annealing below the glass transition temperature. The effect of annealing temperature on the electrical and optical properties has been studied. A linear fit between Δ
E
and
E
o
is observed, indicating the validity of Meyer–Neldel rule with the change in the annealing temperature.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-008-2948-8</identifier><identifier>CODEN: JMTSAS</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Amorphous semiconductors; glasses ; Annealing ; Applied sciences ; Building materials. Ceramics. Glasses ; Characterization and Evaluation of Materials ; Chemical industry and chemicals ; Classical Mechanics ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Crystallization ; Crystallography and Scattering Methods ; Electrical properties ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Glass substrates ; Glass transition temperature ; Glasses ; Globules ; Manufacture ; Materials Science ; Optical properties ; Physics ; Polymer Sciences ; Solid Mechanics ; Temperature ; Temperature dependence ; Thermal analysis ; X-ray diffraction</subject><ispartof>Journal of materials science, 2008-09, Vol.43 (18), p.6099-6104</ispartof><rights>Springer Science+Business Media, LLC 2008</rights><rights>2008 INIST-CNRS</rights><rights>Springer Science+Business Media, LLC 2008.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c377t-7c96d759451c57fabad3a185d6ba8f2c637443db4b92877baa970a308e3d05ca3</citedby><cites>FETCH-LOGICAL-c377t-7c96d759451c57fabad3a185d6ba8f2c637443db4b92877baa970a308e3d05ca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10853-008-2948-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10853-008-2948-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20751347$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kumar, Praveen</creatorcontrib><creatorcontrib>Thangaraj, R.</creatorcontrib><creatorcontrib>Stephen Sathiaraj, T.</creatorcontrib><title>Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor</title><title>Journal of materials science</title><addtitle>J Mater Sci</addtitle><description>The melt-quenched Sn
10
Sb
20
Se
70
sample in the bulk form was used to prepare films on well-cleaned glass substrates by thermal evaporation method. The activation energy for glass transition (apparent) and crystallization has been analyzed by using the Kissinger formulation. The X-ray diffraction study shows the crystallization of Sb
2
Se
3
phase in the major proportion as compared to the SnSe
2
phase. The SEM images film of the show the appearance of spherical globules upon annealing below the glass transition temperature. The effect of annealing temperature on the electrical and optical properties has been studied. A linear fit between Δ
E
and
E
o
is observed, indicating the validity of Meyer–Neldel rule with the change in the annealing temperature.</description><subject>Amorphous semiconductors; glasses</subject><subject>Annealing</subject><subject>Applied sciences</subject><subject>Building materials. Ceramics. Glasses</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemical industry and chemicals</subject><subject>Classical Mechanics</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Crystallization</subject><subject>Crystallography and Scattering Methods</subject><subject>Electrical properties</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Glass substrates</subject><subject>Glass transition temperature</subject><subject>Glasses</subject><subject>Globules</subject><subject>Manufacture</subject><subject>Materials Science</subject><subject>Optical properties</subject><subject>Physics</subject><subject>Polymer Sciences</subject><subject>Solid Mechanics</subject><subject>Temperature</subject><subject>Temperature dependence</subject><subject>Thermal analysis</subject><subject>X-ray diffraction</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kU9r3DAQxU1oIdu0HyA3Q2lvTkeSZcnHEvonEOhh07MYS-ONgi1vNfZhv30VNrRQ6GHQgH7vzTCvqq4F3AgA84kFWK0aANvIvrWNvah2QhvVtBbUq2oHIGUj205cVm-YnwBAGyl2FT88Up5xqjHhdOLIpQmlEuEU06FeaT5SxnXLVAc6UgqUPNXLWNNEfs3RF-0xLwVaI3EdU71PAvaDhD0ZqA8TMp9qpjn6JYXNr0t-W70ecWJ69_JeVT-_fnm4_d7c__h2d_v5vvHKmLUxvu-C0X2rhddmxAGDQmF16Aa0o_SdMm2rwtAOvbTGDIi9AVRgSQXQHtVV9fHsW_b7tRGvbo7saZow0bKxU1qCEbIv4Pt_wKdly-Ug7KTUvVat6bpCiTPl88KcaXTHHGfMJyfAPYfgziG4EoJ7DsHZovnw4oxcLjVmTD7yH2GZr0VxL5w8c1y-0oHy3w3-b_4b6SSXkA</recordid><startdate>200809</startdate><enddate>200809</enddate><creator>Kumar, Praveen</creator><creator>Thangaraj, R.</creator><creator>Stephen Sathiaraj, T.</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>200809</creationdate><title>Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor</title><author>Kumar, Praveen ; Thangaraj, R. ; Stephen Sathiaraj, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c377t-7c96d759451c57fabad3a185d6ba8f2c637443db4b92877baa970a308e3d05ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Amorphous semiconductors; glasses</topic><topic>Annealing</topic><topic>Applied sciences</topic><topic>Building materials. Ceramics. Glasses</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemical industry and chemicals</topic><topic>Classical Mechanics</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Crystallization</topic><topic>Crystallography and Scattering Methods</topic><topic>Electrical properties</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Glass substrates</topic><topic>Glass transition temperature</topic><topic>Glasses</topic><topic>Globules</topic><topic>Manufacture</topic><topic>Materials Science</topic><topic>Optical properties</topic><topic>Physics</topic><topic>Polymer Sciences</topic><topic>Solid Mechanics</topic><topic>Temperature</topic><topic>Temperature dependence</topic><topic>Thermal analysis</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumar, Praveen</creatorcontrib><creatorcontrib>Thangaraj, R.</creatorcontrib><creatorcontrib>Stephen Sathiaraj, T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumar, Praveen</au><au>Thangaraj, R.</au><au>Stephen Sathiaraj, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor</atitle><jtitle>Journal of materials science</jtitle><stitle>J Mater Sci</stitle><date>2008-09</date><risdate>2008</risdate><volume>43</volume><issue>18</issue><spage>6099</spage><epage>6104</epage><pages>6099-6104</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><coden>JMTSAS</coden><abstract>The melt-quenched Sn
10
Sb
20
Se
70
sample in the bulk form was used to prepare films on well-cleaned glass substrates by thermal evaporation method. The activation energy for glass transition (apparent) and crystallization has been analyzed by using the Kissinger formulation. The X-ray diffraction study shows the crystallization of Sb
2
Se
3
phase in the major proportion as compared to the SnSe
2
phase. The SEM images film of the show the appearance of spherical globules upon annealing below the glass transition temperature. The effect of annealing temperature on the electrical and optical properties has been studied. A linear fit between Δ
E
and
E
o
is observed, indicating the validity of Meyer–Neldel rule with the change in the annealing temperature.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10853-008-2948-8</doi><tpages>6</tpages></addata></record> |
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| subjects | Amorphous semiconductors glasses Annealing Applied sciences Building materials. Ceramics. Glasses Characterization and Evaluation of Materials Chemical industry and chemicals Classical Mechanics Condensed matter: electronic structure, electrical, magnetic, and optical properties Crystallization Crystallography and Scattering Methods Electrical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Glass substrates Glass transition temperature Glasses Globules Manufacture Materials Science Optical properties Physics Polymer Sciences Solid Mechanics Temperature Temperature dependence Thermal analysis X-ray diffraction |
| title | Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor |
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