Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces
The formation of step bunches and/or facets on hydrogen-etched 6H-SiC(0 0 0 1) and ( 0 0 0 1 ¯ ) surfaces has been studied, using both nominally on-axis and intentionally miscut ( i.e. vicinal) substrates. It is found that small miscuts on the (0 0 0 1) surface produce full unit-cell high steps, whi...
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| Veröffentlicht in: | Surface science 2008-09, Vol.602 (17), p.2936-2942 |
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| container_issue | 17 |
| container_start_page | 2936 |
| container_title | Surface science |
| container_volume | 602 |
| creator | Nie, S. Lee, C.D. Feenstra, R.M. Ke, Y. Devaty, R.P. Choyke, W.J. Inoki, C.K. Kuan, T.S. Gu, Gong |
| description | The formation of step bunches and/or facets on hydrogen-etched 6H-SiC(0
0
0
1) and (
0
0
0
1
¯
) surfaces has been studied, using both nominally on-axis and intentionally miscut (
i.e. vicinal) substrates. It is found that small miscuts on the (0
0
0
1) surface produce full unit-cell high steps, while half unit-cell high steps are observed on the (
0
0
0
1
¯
) surface. The observed step normal direction is found to be
〈
1
1
¯
0
0
〉
for both surfaces. Hence, for intentionally miscut material, a miscut oriented towards this direction produces much better order in the step array compared to a miscut oriented towards a
〈
1
1
2
¯
0
〉
direction. For (0
0
0
1) vicinal surfaces that are miscut towards the
〈
1
1
¯
0
0
〉
direction, the formation of surface ripples is observed for 3° miscut and the development of small facets (nanofacets) is found for higher miscut angles. Much less faceting is observed on miscut (
0
0
0
1
¯
) surfaces. Additionally, the (0
0
01) surface is found to have a much larger spatial anisotropy in step energies than the (
0
0
0
1
¯
) surface. |
| doi_str_mv | 10.1016/j.susc.2008.07.021 |
| format | Article |
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0
0
1) and (
0
0
0
1
¯
) surfaces has been studied, using both nominally on-axis and intentionally miscut (
i.e. vicinal) substrates. It is found that small miscuts on the (0
0
0
1) surface produce full unit-cell high steps, while half unit-cell high steps are observed on the (
0
0
0
1
¯
) surface. The observed step normal direction is found to be
〈
1
1
¯
0
0
〉
for both surfaces. Hence, for intentionally miscut material, a miscut oriented towards this direction produces much better order in the step array compared to a miscut oriented towards a
〈
1
1
2
¯
0
〉
direction. For (0
0
0
1) vicinal surfaces that are miscut towards the
〈
1
1
¯
0
0
〉
direction, the formation of surface ripples is observed for 3° miscut and the development of small facets (nanofacets) is found for higher miscut angles. Much less faceting is observed on miscut (
0
0
0
1
¯
) surfaces. Additionally, the (0
0
01) surface is found to have a much larger spatial anisotropy in step energies than the (
0
0
0
1
¯
) surface.</description><identifier>ISSN: 0039-6028</identifier><identifier>EISSN: 1879-2758</identifier><identifier>DOI: 10.1016/j.susc.2008.07.021</identifier><identifier>CODEN: SUSCAS</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Atomic force microscopy ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Physics ; Silicon carbide ; Step formation and bunching</subject><ispartof>Surface science, 2008-09, Vol.602 (17), p.2936-2942</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c405t-c6330d4810b2b8550f21a488d87b8574450a623271773bb5e1d6767c1ec867283</citedby><cites>FETCH-LOGICAL-c405t-c6330d4810b2b8550f21a488d87b8574450a623271773bb5e1d6767c1ec867283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0039602808005049$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20697003$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Nie, S.</creatorcontrib><creatorcontrib>Lee, C.D.</creatorcontrib><creatorcontrib>Feenstra, R.M.</creatorcontrib><creatorcontrib>Ke, Y.</creatorcontrib><creatorcontrib>Devaty, R.P.</creatorcontrib><creatorcontrib>Choyke, W.J.</creatorcontrib><creatorcontrib>Inoki, C.K.</creatorcontrib><creatorcontrib>Kuan, T.S.</creatorcontrib><creatorcontrib>Gu, Gong</creatorcontrib><title>Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces</title><title>Surface science</title><description>The formation of step bunches and/or facets on hydrogen-etched 6H-SiC(0
0
0
1) and (
0
0
0
1
¯
) surfaces has been studied, using both nominally on-axis and intentionally miscut (
i.e. vicinal) substrates. It is found that small miscuts on the (0
0
0
1) surface produce full unit-cell high steps, while half unit-cell high steps are observed on the (
0
0
0
1
¯
) surface. The observed step normal direction is found to be
〈
1
1
¯
0
0
〉
for both surfaces. Hence, for intentionally miscut material, a miscut oriented towards this direction produces much better order in the step array compared to a miscut oriented towards a
〈
1
1
2
¯
0
〉
direction. For (0
0
0
1) vicinal surfaces that are miscut towards the
〈
1
1
¯
0
0
〉
direction, the formation of surface ripples is observed for 3° miscut and the development of small facets (nanofacets) is found for higher miscut angles. Much less faceting is observed on miscut (
0
0
0
1
¯
) surfaces. Additionally, the (0
0
01) surface is found to have a much larger spatial anisotropy in step energies than the (
0
0
0
1
¯
) surface.</description><subject>Atomic force microscopy</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Silicon carbide</subject><subject>Step formation and bunching</subject><issn>0039-6028</issn><issn>1879-2758</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kE1Lw0AQhhdRsFb_gKdc9JY4u8l-RLxIUSsUPFTPy2YzsVvSpO6mQhH_uxsqHp0PhoF3ZpiHkEsKGQUqbtZZ2AWbMQCVgcyA0SMyoUqWKZNcHZMJQF6mApg6JWchrCFaUfIJuV0OuE2a3m_M4PouibHa175_xy7Fwa6wTsQ8XbrZFySj0-8k7HxjLIZzctKYNuDFb52St8eH19k8Xbw8Pc_uF6ktgA-pFXkOdaEoVKxSnEPDqCmUqpWMrSwKDkawnEkqZV5VHGktpJCWolVCMpVPyfVh79b3HzsMg964YLFtTYf9Luic0zJmEYXsILS-D8Fjo7febYzfawp6xKTXesSkR0wapI6Y4tDV73YTrGkbbzrrwt8kA1HKCC_q7g46jK9-OvQ6WIedxdp5tIOue_ffmR_u23op</recordid><startdate>20080901</startdate><enddate>20080901</enddate><creator>Nie, S.</creator><creator>Lee, C.D.</creator><creator>Feenstra, R.M.</creator><creator>Ke, Y.</creator><creator>Devaty, R.P.</creator><creator>Choyke, W.J.</creator><creator>Inoki, C.K.</creator><creator>Kuan, T.S.</creator><creator>Gu, Gong</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20080901</creationdate><title>Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces</title><author>Nie, S. ; Lee, C.D. ; Feenstra, R.M. ; Ke, Y. ; Devaty, R.P. ; Choyke, W.J. ; Inoki, C.K. ; Kuan, T.S. ; Gu, Gong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c405t-c6330d4810b2b8550f21a488d87b8574450a623271773bb5e1d6767c1ec867283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Atomic force microscopy</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Silicon carbide</topic><topic>Step formation and bunching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nie, S.</creatorcontrib><creatorcontrib>Lee, C.D.</creatorcontrib><creatorcontrib>Feenstra, R.M.</creatorcontrib><creatorcontrib>Ke, Y.</creatorcontrib><creatorcontrib>Devaty, R.P.</creatorcontrib><creatorcontrib>Choyke, W.J.</creatorcontrib><creatorcontrib>Inoki, C.K.</creatorcontrib><creatorcontrib>Kuan, T.S.</creatorcontrib><creatorcontrib>Gu, Gong</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nie, S.</au><au>Lee, C.D.</au><au>Feenstra, R.M.</au><au>Ke, Y.</au><au>Devaty, R.P.</au><au>Choyke, W.J.</au><au>Inoki, C.K.</au><au>Kuan, T.S.</au><au>Gu, Gong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces</atitle><jtitle>Surface science</jtitle><date>2008-09-01</date><risdate>2008</risdate><volume>602</volume><issue>17</issue><spage>2936</spage><epage>2942</epage><pages>2936-2942</pages><issn>0039-6028</issn><eissn>1879-2758</eissn><coden>SUSCAS</coden><abstract>The formation of step bunches and/or facets on hydrogen-etched 6H-SiC(0
0
0
1) and (
0
0
0
1
¯
) surfaces has been studied, using both nominally on-axis and intentionally miscut (
i.e. vicinal) substrates. It is found that small miscuts on the (0
0
0
1) surface produce full unit-cell high steps, while half unit-cell high steps are observed on the (
0
0
0
1
¯
) surface. The observed step normal direction is found to be
〈
1
1
¯
0
0
〉
for both surfaces. Hence, for intentionally miscut material, a miscut oriented towards this direction produces much better order in the step array compared to a miscut oriented towards a
〈
1
1
2
¯
0
〉
direction. For (0
0
0
1) vicinal surfaces that are miscut towards the
〈
1
1
¯
0
0
〉
direction, the formation of surface ripples is observed for 3° miscut and the development of small facets (nanofacets) is found for higher miscut angles. Much less faceting is observed on miscut (
0
0
0
1
¯
) surfaces. Additionally, the (0
0
01) surface is found to have a much larger spatial anisotropy in step energies than the (
0
0
0
1
¯
) surface.</abstract><cop>Lausanne</cop><cop>Amsterdam</cop><cop>New York, NY</cop><pub>Elsevier B.V</pub><doi>10.1016/j.susc.2008.07.021</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0039-6028 |
| ispartof | Surface science, 2008-09, Vol.602 (17), p.2936-2942 |
| issn | 0039-6028 1879-2758 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35193514 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Atomic force microscopy Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Physics Silicon carbide Step formation and bunching |
| title | Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces |
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