Selective-area-growth of InAs-QDs with different absorption wavelengths via developed metal-mask/MBE method for integrated optical devices

The selective-area-growth (SAG) of InAs quantum dots (QDs) with different emission wavelengths on different areas was carried out using the metal-mask (MM) method during conventional molecular beam epitaxy (MBE) growth. Two SAG areas (SAG-1 and SAG-2) of the QDs were obtained using the rotational MM...

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Veröffentlicht in:	Applied surface science 2008-09, Vol.254 (23), p.7968-7971
Hauptverfasser:	Ozaki, N., Takata, Y., Ohkouchi, S., Sugimoto, Y., Ikeda, N., Asakawa, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	All-optical photonic device Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Iii-v semiconductors Materials science Metal-mask Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Photonic crystal Physics Quantum dots Selective-area-growth
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