Propagation of misfit dislocations from AlN/Si interface into Si
A substantial improvement of the structural quality of GaN/AlN grown on He implanted Si has been described. Many misfit dislocations were redirected from the Al/Si interface and propagated to the Si substrate due to the formation of He bubbles in the substrate. Growth temperature of GaN/AlN was chos...
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| Veröffentlicht in: | Journal of crystal growth 2008-08, Vol.310 (17), p.3917-3923 |
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| container_issue | 17 |
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| container_title | Journal of crystal growth |
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| creator | Liliental-Weber, Z. Maltez, R.L. Xie, J. Morkoç, H. |
| description | A substantial improvement of the structural quality of GaN/AlN grown on He implanted Si has been described. Many misfit dislocations were redirected from the Al/Si interface and propagated to the Si substrate due to the formation of He bubbles in the substrate. Growth temperature of GaN/AlN was chosen to be the annealing temperature necessary for He bubble formation. The dependence on the He fluence, distance of He bubbles from the Si surface and cleaning procedure of the Si before growth have been described. The structural perfection of the GaN/AlN layers was compared to the layers grown on un-implanted Si. |
| doi_str_mv | 10.1016/j.jcrysgro.2008.06.006 |
| format | Article |
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Many misfit dislocations were redirected from the Al/Si interface and propagated to the Si substrate due to the formation of He bubbles in the substrate. Growth temperature of GaN/AlN was chosen to be the annealing temperature necessary for He bubble formation. The dependence on the He fluence, distance of He bubbles from the Si surface and cleaning procedure of the Si before growth have been described. The structural perfection of the GaN/AlN layers was compared to the layers grown on un-implanted Si.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2008.06.006</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Propagation of misfit dislocations ; A1. Structural perfection ; A1. TEM ; B1. GaN/AlN/Si interfaces ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Defects and impurities in crystals; microstructure ; Exact sciences and technology ; Linear defects: dislocations, disclinations ; Materials science ; Methods of crystal growth; physics of crystal growth ; Physics ; Structure of solids and liquids; crystallography ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Journal of crystal growth, 2008-08, Vol.310 (17), p.3917-3923</ispartof><rights>2008</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-9b2d2fe36eee90872021ee3d28c6ae36cb201f2a364f13fe44cc0aeb4eb9697b3</citedby><cites>FETCH-LOGICAL-c373t-9b2d2fe36eee90872021ee3d28c6ae36cb201f2a364f13fe44cc0aeb4eb9697b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2008.06.006$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20706523$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liliental-Weber, Z.</creatorcontrib><creatorcontrib>Maltez, R.L.</creatorcontrib><creatorcontrib>Xie, J.</creatorcontrib><creatorcontrib>Morkoç, H.</creatorcontrib><title>Propagation of misfit dislocations from AlN/Si interface into Si</title><title>Journal of crystal growth</title><description>A substantial improvement of the structural quality of GaN/AlN grown on He implanted Si has been described. Many misfit dislocations were redirected from the Al/Si interface and propagated to the Si substrate due to the formation of He bubbles in the substrate. Growth temperature of GaN/AlN was chosen to be the annealing temperature necessary for He bubble formation. The dependence on the He fluence, distance of He bubbles from the Si surface and cleaning procedure of the Si before growth have been described. The structural perfection of the GaN/AlN layers was compared to the layers grown on un-implanted Si.</description><subject>A1. Propagation of misfit dislocations</subject><subject>A1. Structural perfection</subject><subject>A1. TEM</subject><subject>B1. GaN/AlN/Si interfaces</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Exact sciences and technology</subject><subject>Linear defects: dislocations, disclinations</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFUMtOwzAQtBBIlMIvoFzglnRtp05ya1XxkipAKpwtx1lXjtK42ClS_x6XAlcuu6vRzM7uEHJNIaNAxaTNWu33Ye1dxgDKDEQGIE7IiJYFT6cA7JSMYmUpsLw8JxchtABRSWFEZq_ebdVaDdb1iTPJxgZjh6SxoXP6Gw2J8W6TzLvnycomth_QG6XxMLlkZS_JmVFdwKufPibv93dvi8d0-fLwtJgvU80LPqRVzRpmkAtErKAsGDCKyBtWaqEirGsG1DDFRW4oN5jnWoPCOse6ElVR8zG5Pe7devexwzDIeKrGrlM9ul2QfAqCQckiURyJ2rsQPBq59Xaj_F5SkIfAZCt_A5OHwCQIGQOLwpsfBxW06oxXvbbhT82gADFlPPJmRx7Gdz8tehm0xV5jYz3qQTbO_mf1BUd0hRU</recordid><startdate>20080815</startdate><enddate>20080815</enddate><creator>Liliental-Weber, Z.</creator><creator>Maltez, R.L.</creator><creator>Xie, J.</creator><creator>Morkoç, H.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080815</creationdate><title>Propagation of misfit dislocations from AlN/Si interface into Si</title><author>Liliental-Weber, Z. ; Maltez, R.L. ; Xie, J. ; Morkoç, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-9b2d2fe36eee90872021ee3d28c6ae36cb201f2a364f13fe44cc0aeb4eb9697b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>A1. Propagation of misfit dislocations</topic><topic>A1. Structural perfection</topic><topic>A1. TEM</topic><topic>B1. GaN/AlN/Si interfaces</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Exact sciences and technology</topic><topic>Linear defects: dislocations, disclinations</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liliental-Weber, Z.</creatorcontrib><creatorcontrib>Maltez, R.L.</creatorcontrib><creatorcontrib>Xie, J.</creatorcontrib><creatorcontrib>Morkoç, H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liliental-Weber, Z.</au><au>Maltez, R.L.</au><au>Xie, J.</au><au>Morkoç, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Propagation of misfit dislocations from AlN/Si interface into Si</atitle><jtitle>Journal of crystal growth</jtitle><date>2008-08-15</date><risdate>2008</risdate><volume>310</volume><issue>17</issue><spage>3917</spage><epage>3923</epage><pages>3917-3923</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>A substantial improvement of the structural quality of GaN/AlN grown on He implanted Si has been described. Many misfit dislocations were redirected from the Al/Si interface and propagated to the Si substrate due to the formation of He bubbles in the substrate. Growth temperature of GaN/AlN was chosen to be the annealing temperature necessary for He bubble formation. The dependence on the He fluence, distance of He bubbles from the Si surface and cleaning procedure of the Si before growth have been described. The structural perfection of the GaN/AlN layers was compared to the layers grown on un-implanted Si.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2008.06.006</doi><tpages>7</tpages></addata></record> |
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| subjects | A1. Propagation of misfit dislocations A1. Structural perfection A1. TEM B1. GaN/AlN/Si interfaces Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Exact sciences and technology Linear defects: dislocations, disclinations Materials science Methods of crystal growth physics of crystal growth Physics Structure of solids and liquids crystallography Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Propagation of misfit dislocations from AlN/Si interface into Si |
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