Thermal-induced gradually changes in the optical properties of amorphous GeSe(2) film prepared by PLD

Amorphous GeSe(2) film was prepared by the pulsed laser deposition technique and annealed at different temperature from 473 to 623 K. Using the 'non-direct transition' model proposed by Tauc, the short wavelength absorption edges of the films were well fitted and the optical band gaps ([Ma...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2009-11, Vol.404 (20), p.3397-3400
Hauptverfasser:	Pan, R K, Tao, H Z, Zang, H C, Zhang, T J, Zhao, X J
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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