The Dynamic Characteristics and Linewidth Enhancement Factor of Quasi-Supercontinuum Self-Assembled Quantum Dot Lasers
The theoretical analysis of optical gain and chirp characteristics of a semiconductor quantum dot (Qdot) broadband laser is presented. The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi-supercontinuum lasing in InGaAs/GaAs Qdot laser....
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| Veröffentlicht in: | IEEE journal of quantum electronics 2009-09, Vol.45 (9), p.1177-1182 |
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| container_title | IEEE journal of quantum electronics |
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| creator | Chee Loon Tan Yang Wang Djie, H.S. Boon Siew Ooi |
| description | The theoretical analysis of optical gain and chirp characteristics of a semiconductor quantum dot (Qdot) broadband laser is presented. The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi-supercontinuum lasing in InGaAs/GaAs Qdot laser. The model takes into account factors such as Qdot size fluctuation, finite carrier lifetime in each confined energy states, wetting layer induced nonconfined states and the presence of continuum states. Hence, calculation of the linewidth enhancement factor together with the variation of optical gain and index change across the spectrum of interest becomes critical to yield a basic understanding on the limitation of this new class of lasers. Such findings are important for the design of a practical single broadband laser diode for applications in low coherence interferometry sensing and optical fiber communications. Calculation results show that the linewidth enhancement factor from the ground state of broadband Qdot lasers ( alpha ~ 3) is slightly larger but in the same order of magnitude as compared to that of conventional Qdot lasers. The gain spectrum of the quasi-supercontinuum lasing system exhibits almost twice the bandwidth than conventional lasers but with comparable material differential gain ( ~ 10 -16 cm 2 ) and material differential refractive index ( ~ 10 -20 cm 3 ) near current threshold. |
| doi_str_mv | 10.1109/JQE.2009.2020813 |
| format | Article |
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The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi-supercontinuum lasing in InGaAs/GaAs Qdot laser. The model takes into account factors such as Qdot size fluctuation, finite carrier lifetime in each confined energy states, wetting layer induced nonconfined states and the presence of continuum states. Hence, calculation of the linewidth enhancement factor together with the variation of optical gain and index change across the spectrum of interest becomes critical to yield a basic understanding on the limitation of this new class of lasers. Such findings are important for the design of a practical single broadband laser diode for applications in low coherence interferometry sensing and optical fiber communications. Calculation results show that the linewidth enhancement factor from the ground state of broadband Qdot lasers ( alpha ~ 3) is slightly larger but in the same order of magnitude as compared to that of conventional Qdot lasers. The gain spectrum of the quasi-supercontinuum lasing system exhibits almost twice the bandwidth than conventional lasers but with comparable material differential gain ( ~ 10 -16 cm 2 ) and material differential refractive index ( ~ 10 -20 cm 3 ) near current threshold.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2009.2020813</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Atoms & subatomic particles ; Broad gain devices ; Broadband ; carrier dynamics ; carrier lifetime ; Exact sciences and technology ; Fiber lasers ; Fundamental areas of phenomenology (including applications) ; Gain ; Gallium arsenide ; Laser modes ; Laser theory ; Lasers ; Lasing ; linewidth enhancement factor ; Mathematical analysis ; Mathematical models ; multi-population rate equations ; Optical interferometry ; Optical materials ; Optical refraction ; Optical sensors ; Optical telecommunications ; Optical variables control ; Optics ; Physics ; Quantum dot lasers ; Quantum dots ; Qunatum dots ; semiconductor laser modeling ; Semiconductor lasers ; Semiconductor lasers; laser diodes ; Semiconductors ; Telecommunications ; Telecommunications and information theory</subject><ispartof>IEEE journal of quantum electronics, 2009-09, Vol.45 (9), p.1177-1182</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c430t-ca0f7e0fd4f1678fb8517cf80a3a4a58b48672609ff1c04d6dddf5a6ce8d4e453</citedby><cites>FETCH-LOGICAL-c430t-ca0f7e0fd4f1678fb8517cf80a3a4a58b48672609ff1c04d6dddf5a6ce8d4e453</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5210260$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5210260$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21974300$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chee Loon Tan</creatorcontrib><creatorcontrib>Yang Wang</creatorcontrib><creatorcontrib>Djie, H.S.</creatorcontrib><creatorcontrib>Boon Siew Ooi</creatorcontrib><title>The Dynamic Characteristics and Linewidth Enhancement Factor of Quasi-Supercontinuum Self-Assembled Quantum Dot Lasers</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>The theoretical analysis of optical gain and chirp characteristics of a semiconductor quantum dot (Qdot) broadband laser is presented. The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi-supercontinuum lasing in InGaAs/GaAs Qdot laser. The model takes into account factors such as Qdot size fluctuation, finite carrier lifetime in each confined energy states, wetting layer induced nonconfined states and the presence of continuum states. Hence, calculation of the linewidth enhancement factor together with the variation of optical gain and index change across the spectrum of interest becomes critical to yield a basic understanding on the limitation of this new class of lasers. Such findings are important for the design of a practical single broadband laser diode for applications in low coherence interferometry sensing and optical fiber communications. Calculation results show that the linewidth enhancement factor from the ground state of broadband Qdot lasers ( alpha ~ 3) is slightly larger but in the same order of magnitude as compared to that of conventional Qdot lasers. The gain spectrum of the quasi-supercontinuum lasing system exhibits almost twice the bandwidth than conventional lasers but with comparable material differential gain ( ~ 10 -16 cm 2 ) and material differential refractive index ( ~ 10 -20 cm 3 ) near current threshold.</description><subject>Applied sciences</subject><subject>Atoms & subatomic particles</subject><subject>Broad gain devices</subject><subject>Broadband</subject><subject>carrier dynamics</subject><subject>carrier lifetime</subject><subject>Exact sciences and technology</subject><subject>Fiber lasers</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Gain</subject><subject>Gallium arsenide</subject><subject>Laser modes</subject><subject>Laser theory</subject><subject>Lasers</subject><subject>Lasing</subject><subject>linewidth enhancement factor</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>multi-population rate equations</subject><subject>Optical interferometry</subject><subject>Optical materials</subject><subject>Optical refraction</subject><subject>Optical sensors</subject><subject>Optical telecommunications</subject><subject>Optical variables control</subject><subject>Optics</subject><subject>Physics</subject><subject>Quantum dot lasers</subject><subject>Quantum dots</subject><subject>Qunatum dots</subject><subject>semiconductor laser modeling</subject><subject>Semiconductor lasers</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Semiconductors</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc9rHCEYhqW00G3ae6EXKbQ9Tfo56ugcw2bTHyyUkPQsrvPJGmacrTot-e_rsksOPfSiqM_3gu9DyFsGl4xB__n77eayBejr0oJm_BlZMSl1wxTjz8kKgOmmZ716SV7l_FCPQmhYkd_3e6TXj9FOwdH13ibrCqaQS3CZ2jjQbYj4JwxlTzdxb6PDCWOhNxWbE509vV1sDs3dcsDk5lhCXJaJ3uHom6uccdqNOByZWOr19Vzo1mZM-TV54e2Y8c15vyA_bzb366_N9seXb-urbeMEh9I4C14h-EF41intd1oy5bwGy62wUu-E7lTbQe89cyCGbhgGL23nUA8CheQX5NMp95DmXwvmYqaQHY6jjTgv2eiur5G85ZX8-F-SSxC9VKKC7_8BH-YlxfoLo6WS0LJWVQhOkEtzzgm9OaQw2fRoGJijL1N9maMvc_ZVRz6cc212dvSplh3y01xb3dVOoHLvTlxAxKdn2TKoRfC_8gae7A</recordid><startdate>20090901</startdate><enddate>20090901</enddate><creator>Chee Loon Tan</creator><creator>Yang Wang</creator><creator>Djie, H.S.</creator><creator>Boon Siew Ooi</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi-supercontinuum lasing in InGaAs/GaAs Qdot laser. The model takes into account factors such as Qdot size fluctuation, finite carrier lifetime in each confined energy states, wetting layer induced nonconfined states and the presence of continuum states. Hence, calculation of the linewidth enhancement factor together with the variation of optical gain and index change across the spectrum of interest becomes critical to yield a basic understanding on the limitation of this new class of lasers. Such findings are important for the design of a practical single broadband laser diode for applications in low coherence interferometry sensing and optical fiber communications. Calculation results show that the linewidth enhancement factor from the ground state of broadband Qdot lasers ( alpha ~ 3) is slightly larger but in the same order of magnitude as compared to that of conventional Qdot lasers. The gain spectrum of the quasi-supercontinuum lasing system exhibits almost twice the bandwidth than conventional lasers but with comparable material differential gain ( ~ 10 -16 cm 2 ) and material differential refractive index ( ~ 10 -20 cm 3 ) near current threshold.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JQE.2009.2020813</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Atoms & subatomic particles Broad gain devices Broadband carrier dynamics carrier lifetime Exact sciences and technology Fiber lasers Fundamental areas of phenomenology (including applications) Gain Gallium arsenide Laser modes Laser theory Lasers Lasing linewidth enhancement factor Mathematical analysis Mathematical models multi-population rate equations Optical interferometry Optical materials Optical refraction Optical sensors Optical telecommunications Optical variables control Optics Physics Quantum dot lasers Quantum dots Qunatum dots semiconductor laser modeling Semiconductor lasers Semiconductor lasers laser diodes Semiconductors Telecommunications Telecommunications and information theory |
| title | The Dynamic Characteristics and Linewidth Enhancement Factor of Quasi-Supercontinuum Self-Assembled Quantum Dot Lasers |
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