Production of B₄C coatings by CVD method in a dual impinging-jet reactor: Chemical yield, morphology, and hardness analysis

β-rhombohedral boron carbide (B₄C) was deposited on a tungsten substrate from a BCl₃---H₂---CH₄ gas mixture in a dual impinging-jet chemical vapor deposition reactor. On-line FTIR analysis of the product stream proved the formation of BHCl₂ and HCl as by products, in a competing parallel reaction. A...

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Veröffentlicht in:AIChE journal 2009-11, Vol.55 (11), p.2914-2919
Hauptverfasser: Karaman, Mustafa, Sezgi, N. Aslı, Özbelge, H. Önder
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creator Karaman, Mustafa
Sezgi, N. Aslı
Özbelge, H. Önder
description β-rhombohedral boron carbide (B₄C) was deposited on a tungsten substrate from a BCl₃---H₂---CH₄ gas mixture in a dual impinging-jet chemical vapor deposition reactor. On-line FTIR analysis of the product stream proved the formation of BHCl₂ and HCl as by products, in a competing parallel reaction. A maximum of 13% chemical yield of boron carbide was observed, and the yield was found to have increasing trend with an increase in temperature. XRD analysis proved the existence of rhombohedral B₄C phase at 1300°C without any other B₄C phases or impurities. At this temperature, the formation of 5-fold icosahedral boron carbide crystals up to 30 micron sizes was observed. Such highly symmetric crystalline regions were observed to have a very high hardness value of 4750 kg/mm² as revealed from the microhardness analysis. The change in product morphology at low substrate temperatures resulted in a decrease in the hardness values. © 2009 American Institute of Chemical Engineers AIChE J, 2009
doi_str_mv 10.1002/aic.11900
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source Wiley Online Library All Journals
subjects Applied sciences
boron carbide
ceramics
Chemical engineering
chemical vapor deposition
Exact sciences and technology
Reactors
refractory carbides
title Production of B₄C coatings by CVD method in a dual impinging-jet reactor: Chemical yield, morphology, and hardness analysis
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