A Novel Trapping-Nitride-Storage Non-Volatile Memory Cell Using a Gated-Diode Structure With an Ultra-Thin Dielectric Dopant Diffusion Barrier

A novel trapping-nitride-storage nonvolatile memory cell by using a gated-diode structure is proposed. An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-08, Vol.55 (8), p.2202-2211
Hauptverfasser:	Wen-Jer Tsai, Tien-Fan Ou, Hsuan-Ling Kao, Erh-Kun Lai, Jyun-Siang Huang, Lit-Ho Chong, Yi-Ying Liao, Shih-Ping Hong, Ming-Tsung Wu, Shih-Chang Tsai, Chia-Hao Leng, Fang-Hao Hsu, Szu-Yu Wang, Chun-Ming Cheng, Tuung Luoh, Yung-Tai Hung, Shing-Ann Luo, Chih-Hao Huang, Tao-Cheng Lu, Yang, T., Kuang-Chao Chen, Chih-Yuan Lu
Format:	Artikel
Sprache:	eng
Schlagworte:	Acceptability Applied sciences Band-edge offset band-to-band tunneling (BTBT) bandgap engineering Compound structure devices Detection Devices Dielectrics Diffusion barriers Diodes direct tunneling (DT) dopant diffusion barrier Dopants Electronics Exact sciences and technology gated diode heterojunction Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories nonvolatile memory (NVM) Position (location) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information trapped-charge storage
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