A Novel Trapping-Nitride-Storage Non-Volatile Memory Cell Using a Gated-Diode Structure With an Ultra-Thin Dielectric Dopant Diffusion Barrier
A novel trapping-nitride-storage nonvolatile memory cell by using a gated-diode structure is proposed. An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is...
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| Veröffentlicht in: | IEEE transactions on electron devices 2008-08, Vol.55 (8), p.2202-2211 |
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| container_title | IEEE transactions on electron devices |
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| creator | Wen-Jer Tsai Tien-Fan Ou Hsuan-Ling Kao Erh-Kun Lai Jyun-Siang Huang Lit-Ho Chong Yi-Ying Liao Shih-Ping Hong Ming-Tsung Wu Shih-Chang Tsai Chia-Hao Leng Fang-Hao Hsu Szu-Yu Wang Chun-Ming Cheng Tuung Luoh Yung-Tai Hung Shing-Ann Luo Chih-Hao Huang Tao-Cheng Lu Yang, T. Kuang-Chao Chen Chih-Yuan Lu |
| description | A novel trapping-nitride-storage nonvolatile memory cell by using a gated-diode structure is proposed. An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is thin enough that charge carriers can flow through it via direct tunneling at low field as being sensed. Good program/erase characteristics and acceptable reliability are presented. Finally, using a low-bandgap material to enhance the sensing current is suggested along with the preferred device structure. |
| doi_str_mv | 10.1109/TED.2008.926576 |
| format | Article |
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An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is thin enough that charge carriers can flow through it via direct tunneling at low field as being sensed. Good program/erase characteristics and acceptable reliability are presented. Finally, using a low-bandgap material to enhance the sensing current is suggested along with the preferred device structure.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2008.926576</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acceptability ; Applied sciences ; Band-edge offset ; band-to-band tunneling (BTBT) ; bandgap engineering ; Compound structure devices ; Detection ; Devices ; Dielectrics ; Diffusion barriers ; Diodes ; direct tunneling (DT) ; dopant diffusion barrier ; Dopants ; Electronics ; Exact sciences and technology ; gated diode ; heterojunction ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Magnetic and optical mass memories ; nonvolatile memory (NVM) ; Position (location) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Storage and reproduction of information ; trapped-charge storage</subject><ispartof>IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2202-2211</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is thin enough that charge carriers can flow through it via direct tunneling at low field as being sensed. Good program/erase characteristics and acceptable reliability are presented. Finally, using a low-bandgap material to enhance the sensing current is suggested along with the preferred device structure.</description><subject>Acceptability</subject><subject>Applied sciences</subject><subject>Band-edge offset</subject><subject>band-to-band tunneling (BTBT)</subject><subject>bandgap engineering</subject><subject>Compound structure devices</subject><subject>Detection</subject><subject>Devices</subject><subject>Dielectrics</subject><subject>Diffusion barriers</subject><subject>Diodes</subject><subject>direct tunneling (DT)</subject><subject>dopant diffusion barrier</subject><subject>Dopants</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>gated diode</subject><subject>heterojunction</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Magnetic and optical mass memories</subject><subject>nonvolatile memory (NVM)</subject><subject>Position (location)</subject><subject>Semiconductor electronics. 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An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is thin enough that charge carriers can flow through it via direct tunneling at low field as being sensed. Good program/erase characteristics and acceptable reliability are presented. Finally, using a low-bandgap material to enhance the sensing current is suggested along with the preferred device structure.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2008.926576</doi><tpages>10</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2202-2211 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| subjects | Acceptability Applied sciences Band-edge offset band-to-band tunneling (BTBT) bandgap engineering Compound structure devices Detection Devices Dielectrics Diffusion barriers Diodes direct tunneling (DT) dopant diffusion barrier Dopants Electronics Exact sciences and technology gated diode heterojunction Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories nonvolatile memory (NVM) Position (location) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information trapped-charge storage |
| title | A Novel Trapping-Nitride-Storage Non-Volatile Memory Cell Using a Gated-Diode Structure With an Ultra-Thin Dielectric Dopant Diffusion Barrier |
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