Polarity determination and control of SiC grown on Si

The polarity of the 3C–SiC epitaxial layers grown on 3C–SiC(1 1 1)/Si(1 1 1) pseudosubstrates formed by carbonization using the deposition of elemental carbon under ultra-high vacuum conditions and alternatively at atmospheric pressure in a rapid thermal chemical vapour deposition reactor were studi...

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.28-33
Hauptverfasser:	Pezoldt, Jörg, Kups, Thomas, Stauden, Thomas, Schröter, Bernd
Format:	Artikel
Sprache:	eng
Schlagworte:	Diffraction Epitaxy of thin films Heterostructures Molecular beam epitaxy Semiconductors Silicon Silicon carbide Surface composition Surface structure
Online-Zugang:	Volltext
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