On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes
The nucleation of HVPE GaN on misoriented sapphire substrates and the transition from the nucleation layer to an epitaxial film were investigated. After a KOH/NaOH eutectic etch of the approximately 45 μ m thick GaN layer, grown on sapphire using a low temperature nucleation, high temperature epitax...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 2009-12, Vol.311 (23), p.4685-4691 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4691 |
|---|---|
| container_issue | 23 |
| container_start_page | 4685 |
| container_title | Journal of crystal growth |
| container_volume | 311 |
| creator | Bohnen, Tim de Jong, Aryan E.F. van Enckevort, Willem J.P. Weyher, Jan L. van Dreumel, Gerbe W.G. Ashraf, Hina Hageman, Paul R. Vlieg, Elias |
| description | The nucleation of HVPE GaN on misoriented sapphire substrates and the transition from the nucleation layer to an epitaxial film were investigated. After a KOH/NaOH eutectic etch of the approximately
45
μ
m
thick GaN layer, grown on sapphire using a low temperature nucleation, high temperature epitaxy process, the cross-sections revealed columnar structures, up to roughly
1
μ
m
above the sapphire substrate. Photoetching of the thick GaN layers revealed inhomogeneous defect distributions along the cross-sections, which appeared to be related to the numerous pinholes originating at the GaN/sapphire interface. We present a model explaining the formation of pinholes by the coalescence of the GaN nuclei during the epitaxial overgrowth. |
| doi_str_mv | 10.1016/j.jcrysgro.2009.07.045 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_35010144</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024809008495</els_id><sourcerecordid>1266749385</sourcerecordid><originalsourceid>FETCH-LOGICAL-c454t-6d3564334e55e8d0f88b03f093b1aa4322564a4cfd5c4a8db6b8c83e5b6846ea3</originalsourceid><addsrcrecordid>eNqFkU9v1DAQxS0EEkvhKyBfQByaMPG_eG-gqrRIFeUAXC3HmXS9Su1gewv99jhs4QiX8WF-7431HiEvO2g76NTbfbt36T7fpNgygG0LfQtCPiKbTve8kQDsMdnUyRpgQj8lz3LeA1RlBxvy8zrQskMaDm5GW3wMp9RFO2N2GByeUhtGGu8wVfsfZUfjRC-_fT6nF_YTjYHe-hyTx1BwpNkuy84npPkw5JJswfxbvdpX6MaHVb34sIvV_jl5Mtk544uH94R8_XD-5eyyubq--Hj2_qpxQorSqJFLJTgXKCXqESatB-ATbPnQWSs4Y3VthZtG6YTV46AG7TRHOSgtFFp-Ql4ffZcUvx8wF1P_7HCebcB4yIZLqCkKUcE3_wQ7plQvtlzLiqoj6lLMOeFkluRvbbo3HZi1E7M3fzoxaycGelM7qcJXDzdsdnaekg3O579qxjRItu0r9-7IYU3mzmMy2fm1j7Hm64oZo__fqV-1X6bB</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1266749385</pqid></control><display><type>article</type><title>On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes</title><source>Elsevier ScienceDirect Journals</source><creator>Bohnen, Tim ; de Jong, Aryan E.F. ; van Enckevort, Willem J.P. ; Weyher, Jan L. ; van Dreumel, Gerbe W.G. ; Ashraf, Hina ; Hageman, Paul R. ; Vlieg, Elias</creator><creatorcontrib>Bohnen, Tim ; de Jong, Aryan E.F. ; van Enckevort, Willem J.P. ; Weyher, Jan L. ; van Dreumel, Gerbe W.G. ; Ashraf, Hina ; Hageman, Paul R. ; Vlieg, Elias</creatorcontrib><description>The nucleation of HVPE GaN on misoriented sapphire substrates and the transition from the nucleation layer to an epitaxial film were investigated. After a KOH/NaOH eutectic etch of the approximately
45
μ
m
thick GaN layer, grown on sapphire using a low temperature nucleation, high temperature epitaxy process, the cross-sections revealed columnar structures, up to roughly
1
μ
m
above the sapphire substrate. Photoetching of the thick GaN layers revealed inhomogeneous defect distributions along the cross-sections, which appeared to be related to the numerous pinholes originating at the GaN/sapphire interface. We present a model explaining the formation of pinholes by the coalescence of the GaN nuclei during the epitaxial overgrowth.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2009.07.045</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Defects ; A1. Nucleation ; A3. Hydride vapor phase epitaxy ; B1. Nitrides ; B2. Semiconducting gallium compounds ; Coalescing ; Condensed matter: structure, mechanical and thermal properties ; Cross sections ; Cross-disciplinary physics: materials science; rheology ; Epitaxy ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Gallium nitrides ; General studies of phase transitions ; Materials science ; Mathematical analysis ; Methods of deposition of films and coatings; film growth and epitaxy ; Nucleation ; Physics ; Pinholes ; Sapphire ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2009-12, Vol.311 (23), p.4685-4691</ispartof><rights>2009 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c454t-6d3564334e55e8d0f88b03f093b1aa4322564a4cfd5c4a8db6b8c83e5b6846ea3</citedby><cites>FETCH-LOGICAL-c454t-6d3564334e55e8d0f88b03f093b1aa4322564a4cfd5c4a8db6b8c83e5b6846ea3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024809008495$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22805297$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bohnen, Tim</creatorcontrib><creatorcontrib>de Jong, Aryan E.F.</creatorcontrib><creatorcontrib>van Enckevort, Willem J.P.</creatorcontrib><creatorcontrib>Weyher, Jan L.</creatorcontrib><creatorcontrib>van Dreumel, Gerbe W.G.</creatorcontrib><creatorcontrib>Ashraf, Hina</creatorcontrib><creatorcontrib>Hageman, Paul R.</creatorcontrib><creatorcontrib>Vlieg, Elias</creatorcontrib><title>On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes</title><title>Journal of crystal growth</title><description>The nucleation of HVPE GaN on misoriented sapphire substrates and the transition from the nucleation layer to an epitaxial film were investigated. After a KOH/NaOH eutectic etch of the approximately
45
μ
m
thick GaN layer, grown on sapphire using a low temperature nucleation, high temperature epitaxy process, the cross-sections revealed columnar structures, up to roughly
1
μ
m
above the sapphire substrate. Photoetching of the thick GaN layers revealed inhomogeneous defect distributions along the cross-sections, which appeared to be related to the numerous pinholes originating at the GaN/sapphire interface. We present a model explaining the formation of pinholes by the coalescence of the GaN nuclei during the epitaxial overgrowth.</description><subject>A1. Defects</subject><subject>A1. Nucleation</subject><subject>A3. Hydride vapor phase epitaxy</subject><subject>B1. Nitrides</subject><subject>B2. Semiconducting gallium compounds</subject><subject>Coalescing</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross sections</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Epitaxy</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>General studies of phase transitions</subject><subject>Materials science</subject><subject>Mathematical analysis</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Nucleation</subject><subject>Physics</subject><subject>Pinholes</subject><subject>Sapphire</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkU9v1DAQxS0EEkvhKyBfQByaMPG_eG-gqrRIFeUAXC3HmXS9Su1gewv99jhs4QiX8WF-7431HiEvO2g76NTbfbt36T7fpNgygG0LfQtCPiKbTve8kQDsMdnUyRpgQj8lz3LeA1RlBxvy8zrQskMaDm5GW3wMp9RFO2N2GByeUhtGGu8wVfsfZUfjRC-_fT6nF_YTjYHe-hyTx1BwpNkuy84npPkw5JJswfxbvdpX6MaHVb34sIvV_jl5Mtk544uH94R8_XD-5eyyubq--Hj2_qpxQorSqJFLJTgXKCXqESatB-ATbPnQWSs4Y3VthZtG6YTV46AG7TRHOSgtFFp-Ql4ffZcUvx8wF1P_7HCebcB4yIZLqCkKUcE3_wQ7plQvtlzLiqoj6lLMOeFkluRvbbo3HZi1E7M3fzoxaycGelM7qcJXDzdsdnaekg3O579qxjRItu0r9-7IYU3mzmMy2fm1j7Hm64oZo__fqV-1X6bB</recordid><startdate>20091201</startdate><enddate>20091201</enddate><creator>Bohnen, Tim</creator><creator>de Jong, Aryan E.F.</creator><creator>van Enckevort, Willem J.P.</creator><creator>Weyher, Jan L.</creator><creator>van Dreumel, Gerbe W.G.</creator><creator>Ashraf, Hina</creator><creator>Hageman, Paul R.</creator><creator>Vlieg, Elias</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20091201</creationdate><title>On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes</title><author>Bohnen, Tim ; de Jong, Aryan E.F. ; van Enckevort, Willem J.P. ; Weyher, Jan L. ; van Dreumel, Gerbe W.G. ; Ashraf, Hina ; Hageman, Paul R. ; Vlieg, Elias</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c454t-6d3564334e55e8d0f88b03f093b1aa4322564a4cfd5c4a8db6b8c83e5b6846ea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>A1. Defects</topic><topic>A1. Nucleation</topic><topic>A3. Hydride vapor phase epitaxy</topic><topic>B1. Nitrides</topic><topic>B2. Semiconducting gallium compounds</topic><topic>Coalescing</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross sections</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Epitaxy</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>General studies of phase transitions</topic><topic>Materials science</topic><topic>Mathematical analysis</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Nucleation</topic><topic>Physics</topic><topic>Pinholes</topic><topic>Sapphire</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bohnen, Tim</creatorcontrib><creatorcontrib>de Jong, Aryan E.F.</creatorcontrib><creatorcontrib>van Enckevort, Willem J.P.</creatorcontrib><creatorcontrib>Weyher, Jan L.</creatorcontrib><creatorcontrib>van Dreumel, Gerbe W.G.</creatorcontrib><creatorcontrib>Ashraf, Hina</creatorcontrib><creatorcontrib>Hageman, Paul R.</creatorcontrib><creatorcontrib>Vlieg, Elias</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bohnen, Tim</au><au>de Jong, Aryan E.F.</au><au>van Enckevort, Willem J.P.</au><au>Weyher, Jan L.</au><au>van Dreumel, Gerbe W.G.</au><au>Ashraf, Hina</au><au>Hageman, Paul R.</au><au>Vlieg, Elias</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes</atitle><jtitle>Journal of crystal growth</jtitle><date>2009-12-01</date><risdate>2009</risdate><volume>311</volume><issue>23</issue><spage>4685</spage><epage>4691</epage><pages>4685-4691</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The nucleation of HVPE GaN on misoriented sapphire substrates and the transition from the nucleation layer to an epitaxial film were investigated. After a KOH/NaOH eutectic etch of the approximately
45
μ
m
thick GaN layer, grown on sapphire using a low temperature nucleation, high temperature epitaxy process, the cross-sections revealed columnar structures, up to roughly
1
μ
m
above the sapphire substrate. Photoetching of the thick GaN layers revealed inhomogeneous defect distributions along the cross-sections, which appeared to be related to the numerous pinholes originating at the GaN/sapphire interface. We present a model explaining the formation of pinholes by the coalescence of the GaN nuclei during the epitaxial overgrowth.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2009.07.045</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2009-12, Vol.311 (23), p.4685-4691 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35010144 |
| source | Elsevier ScienceDirect Journals |
| subjects | A1. Defects A1. Nucleation A3. Hydride vapor phase epitaxy B1. Nitrides B2. Semiconducting gallium compounds Coalescing Condensed matter: structure, mechanical and thermal properties Cross sections Cross-disciplinary physics: materials science rheology Epitaxy Equations of state, phase equilibria, and phase transitions Exact sciences and technology Gallium nitrides General studies of phase transitions Materials science Mathematical analysis Methods of deposition of films and coatings film growth and epitaxy Nucleation Physics Pinholes Sapphire Vapor phase epitaxy growth from vapor phase |
| title | On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T17%3A47%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20nucleation,%20coalescence,%20and%20overgrowth%20of%20HVPE%20GaN%20on%20misoriented%20sapphire%20substrates%20and%20the%20origin%20of%20pinholes&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Bohnen,%20Tim&rft.date=2009-12-01&rft.volume=311&rft.issue=23&rft.spage=4685&rft.epage=4691&rft.pages=4685-4691&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2009.07.045&rft_dat=%3Cproquest_cross%3E1266749385%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1266749385&rft_id=info:pmid/&rft_els_id=S0022024809008495&rfr_iscdi=true |