Information Processing With Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation, and Detection
We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al 2 O 3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which flows outside of the charge current path. The spin orien...
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| Veröffentlicht in: | IEEE transactions on electron devices 2009-10, Vol.56 (10), p.2343-2347 |
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| container_title | IEEE transactions on electron devices |
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| creator | van 't Erve, O. Awo-Affouda, C. Hanbicki, A.T. Li, C.H. Thompson, P.E. Jonker, B.T. |
| description | We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al 2 O 3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which flows outside of the charge current path. The spin orientation of this pure spin current is controlled in one of three ways: 1) by switching the magnetization of the Fe contact; 2) by changing the polarity of the bias on the Fe/Al 2 O 3 "injector" contact, which enables the generation of either majority or minority spin populations in the Si, providing a way to electrically manipulate the injected spin orientation without changing the magnetization of the contact itself; and 3) by inducing spin precession through the application of a small perpendicular magnetic field. Spin polarization by electrical extraction is as effective as that achieved by the more common electrical spin injection. The output characteristics of a planar silicon three-terminal device are very similar to those of nonvolatile giant magnetoresistance metal spin-valve structures. |
| doi_str_mv | 10.1109/TED.2009.2027975 |
| format | Article |
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Fe/Al 2 O 3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which flows outside of the charge current path. The spin orientation of this pure spin current is controlled in one of three ways: 1) by switching the magnetization of the Fe contact; 2) by changing the polarity of the bias on the Fe/Al 2 O 3 "injector" contact, which enables the generation of either majority or minority spin populations in the Si, providing a way to electrically manipulate the injected spin orientation without changing the magnetization of the contact itself; and 3) by inducing spin precession through the application of a small perpendicular magnetic field. Spin polarization by electrical extraction is as effective as that achieved by the more common electrical spin injection. The output characteristics of a planar silicon three-terminal device are very similar to those of nonvolatile giant magnetoresistance metal spin-valve structures.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2009.2027975</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum oxide ; Applied sciences ; Contacts ; Detectors ; Devices ; Electrical spin detection ; electrical spin injection ; Electronics ; Electrons ; Exact sciences and technology ; Extraction ; Iron ; Magnetization ; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics ; Molecular electronics, nanoelectronics ; Orientation ; Polarization ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Spin polarized transport ; spintronics</subject><ispartof>IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2343-2347</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-24ff5cc9df968ddd9c15ab4fd58c630639f2db40de2e91ca3b8cd3f67a2097f83</citedby><cites>FETCH-LOGICAL-c383t-24ff5cc9df968ddd9c15ab4fd58c630639f2db40de2e91ca3b8cd3f67a2097f83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5208396$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5208396$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22040510$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>van 't Erve, O.</creatorcontrib><creatorcontrib>Awo-Affouda, C.</creatorcontrib><creatorcontrib>Hanbicki, A.T.</creatorcontrib><creatorcontrib>Li, C.H.</creatorcontrib><creatorcontrib>Thompson, P.E.</creatorcontrib><creatorcontrib>Jonker, B.T.</creatorcontrib><title>Information Processing With Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation, and Detection</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al 2 O 3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which flows outside of the charge current path. The spin orientation of this pure spin current is controlled in one of three ways: 1) by switching the magnetization of the Fe contact; 2) by changing the polarity of the bias on the Fe/Al 2 O 3 "injector" contact, which enables the generation of either majority or minority spin populations in the Si, providing a way to electrically manipulate the injected spin orientation without changing the magnetization of the contact itself; and 3) by inducing spin precession through the application of a small perpendicular magnetic field. Spin polarization by electrical extraction is as effective as that achieved by the more common electrical spin injection. The output characteristics of a planar silicon three-terminal device are very similar to those of nonvolatile giant magnetoresistance metal spin-valve structures.</description><subject>Aluminum oxide</subject><subject>Applied sciences</subject><subject>Contacts</subject><subject>Detectors</subject><subject>Devices</subject><subject>Electrical spin detection</subject><subject>electrical spin injection</subject><subject>Electronics</subject><subject>Electrons</subject><subject>Exact sciences and technology</subject><subject>Extraction</subject><subject>Iron</subject><subject>Magnetization</subject><subject>Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Orientation</subject><subject>Polarization</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Spin polarized transport</subject><subject>spintronics</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc9LHDEUx0Op0K32XvAyFKoXx74kk0ziTda1LigVtPQYsvlhs8xm1mQG9L83yyweeujl_eB9vu8lfBH6iuEcY5A_HhdX5wRAlkBa2bIPaIYZa2vJG_4RzQCwqCUV9BP6nPO6tLxpyAylZfR92ugh9LG6T71xOYf4VP0Jw9_qfkyuetiGWM3HlFwcclXqh9AF08eLabKMa2d26rNq8TIkva_vdAzbsdNTp6OtrtwwgUfowOsuuy_7fIh-Xy8e5zf17a-fy_nlbW3KM4eaNN4zY6T1kgtrrTSY6VXjLROGU-BUemJXDVhHnMRG05UwlnreagKy9YIeotNp7zb1z6PLg9qEbFzX6ej6MSvBpeAYM17Ik_-SlAEIBm0Bv_0DrvsxxfILJRiXRDZidxcmyKQ-5-S82qaw0elVYVA7r1TxSu28UnuviuT7fq_ORnc-6WhCftcRAg0wDIU7nrjgnHsfMwKCSk7fAP3anXk</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>van 't Erve, O.</creator><creator>Awo-Affouda, C.</creator><creator>Hanbicki, A.T.</creator><creator>Li, C.H.</creator><creator>Thompson, P.E.</creator><creator>Jonker, B.T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope><scope>7QF</scope><scope>JG9</scope></search><sort><creationdate>20091001</creationdate><title>Information Processing With Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation, and Detection</title><author>van 't Erve, O. ; Awo-Affouda, C. ; Hanbicki, A.T. ; Li, C.H. ; Thompson, P.E. ; Jonker, B.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-24ff5cc9df968ddd9c15ab4fd58c630639f2db40de2e91ca3b8cd3f67a2097f83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Aluminum oxide</topic><topic>Applied sciences</topic><topic>Contacts</topic><topic>Detectors</topic><topic>Devices</topic><topic>Electrical spin detection</topic><topic>electrical spin injection</topic><topic>Electronics</topic><topic>Electrons</topic><topic>Exact sciences and technology</topic><topic>Extraction</topic><topic>Iron</topic><topic>Magnetization</topic><topic>Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics</topic><topic>Molecular electronics, nanoelectronics</topic><topic>Orientation</topic><topic>Polarization</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Spin polarized transport</topic><topic>spintronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>van 't Erve, O.</creatorcontrib><creatorcontrib>Awo-Affouda, C.</creatorcontrib><creatorcontrib>Hanbicki, A.T.</creatorcontrib><creatorcontrib>Li, C.H.</creatorcontrib><creatorcontrib>Thompson, P.E.</creatorcontrib><creatorcontrib>Jonker, B.T.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aluminium Industry Abstracts</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>van 't Erve, O.</au><au>Awo-Affouda, C.</au><au>Hanbicki, A.T.</au><au>Li, C.H.</au><au>Thompson, P.E.</au><au>Jonker, B.T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Information Processing With Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation, and Detection</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2009-10-01</date><risdate>2009</risdate><volume>56</volume><issue>10</issue><spage>2343</spage><epage>2347</epage><pages>2343-2347</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al 2 O 3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which flows outside of the charge current path. The spin orientation of this pure spin current is controlled in one of three ways: 1) by switching the magnetization of the Fe contact; 2) by changing the polarity of the bias on the Fe/Al 2 O 3 "injector" contact, which enables the generation of either majority or minority spin populations in the Si, providing a way to electrically manipulate the injected spin orientation without changing the magnetization of the contact itself; and 3) by inducing spin precession through the application of a small perpendicular magnetic field. Spin polarization by electrical extraction is as effective as that achieved by the more common electrical spin injection. The output characteristics of a planar silicon three-terminal device are very similar to those of nonvolatile giant magnetoresistance metal spin-valve structures.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2009.2027975</doi><tpages>5</tpages></addata></record> |
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| subjects | Aluminum oxide Applied sciences Contacts Detectors Devices Electrical spin detection electrical spin injection Electronics Electrons Exact sciences and technology Extraction Iron Magnetization Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Molecular electronics, nanoelectronics Orientation Polarization Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Spin polarized transport spintronics |
| title | Information Processing With Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation, and Detection |
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