In-situ electrical characterization of ultrathin TiN films grown by reactive dc magnetron sputtering on SiO(2)

Ultrathin TiN films were grown by reactive dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in-situ during growth in order to determine the minimum thickness of a continuous film. The coalescence thickness has a minimum of 1 nm a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Thin solid films 2009-10, Vol.517 (24), p.6731-6736
Hauptverfasser:	Ingason, A S, Magnus, F, Agustsson, J S, Olafsson, S, Gudmundsson, J T
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!