Electrical characterisation of thin silicon layers by light beam induced current and internal quantum efficiency measurements
Thin crystalline silicon layers (50 μm) were grown by vapour phase epitaxy on monocrystalline substrates. Minority carrier diffusion length and surface recombination velocity were evaluated by light beam induced current experiment. Although it appeared difficult to apply existing analytical models t...
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| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.67-70 |
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| creator | Sayad, Y. Amtablian, S. Kaminski, A. Blanc, D. Carroy, P. Nouiri, A. Lemiti, M. |
| description | Thin crystalline silicon layers (50
μm) were grown by vapour phase epitaxy on monocrystalline substrates. Minority carrier diffusion length and surface recombination velocity were evaluated by light beam induced current experiment. Although it appeared difficult to apply existing analytical models to thin and high quality layers, multi-dimensional simulator DESSIS was used successfully to extract diffusion length of the order of 300
μm for p-type material and 80
μm for n-type material with surface recombination velocity of the order of 100–1000
cm
s
−1 when the surface was passivated by a thin silicon nitrite coating. Results were compared with the diffusion length evaluated from internal quantum efficiency analysis in fabricated photovoltaic cells made of the same material, using spectral response and reflectivity measurements. |
| doi_str_mv | 10.1016/j.mseb.2009.04.007 |
| format | Article |
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μm) were grown by vapour phase epitaxy on monocrystalline substrates. Minority carrier diffusion length and surface recombination velocity were evaluated by light beam induced current experiment. Although it appeared difficult to apply existing analytical models to thin and high quality layers, multi-dimensional simulator DESSIS was used successfully to extract diffusion length of the order of 300
μm for p-type material and 80
μm for n-type material with surface recombination velocity of the order of 100–1000
cm
s
−1 when the surface was passivated by a thin silicon nitrite coating. Results were compared with the diffusion length evaluated from internal quantum efficiency analysis in fabricated photovoltaic cells made of the same material, using spectral response and reflectivity measurements.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/j.mseb.2009.04.007</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Diffusion length ; Epitaxial silicon ; LBIC ; Quantum efficiency ; Solar cells ; Thin films</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.67-70</ispartof><rights>2009 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-789f2d4c4c0617669740ffe2d97a9bf594a4efb71642e57b4f20e337c75c38423</citedby><cites>FETCH-LOGICAL-c331t-789f2d4c4c0617669740ffe2d97a9bf594a4efb71642e57b4f20e337c75c38423</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mseb.2009.04.007$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Sayad, Y.</creatorcontrib><creatorcontrib>Amtablian, S.</creatorcontrib><creatorcontrib>Kaminski, A.</creatorcontrib><creatorcontrib>Blanc, D.</creatorcontrib><creatorcontrib>Carroy, P.</creatorcontrib><creatorcontrib>Nouiri, A.</creatorcontrib><creatorcontrib>Lemiti, M.</creatorcontrib><title>Electrical characterisation of thin silicon layers by light beam induced current and internal quantum efficiency measurements</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>Thin crystalline silicon layers (50
μm) were grown by vapour phase epitaxy on monocrystalline substrates. Minority carrier diffusion length and surface recombination velocity were evaluated by light beam induced current experiment. Although it appeared difficult to apply existing analytical models to thin and high quality layers, multi-dimensional simulator DESSIS was used successfully to extract diffusion length of the order of 300
μm for p-type material and 80
μm for n-type material with surface recombination velocity of the order of 100–1000
cm
s
−1 when the surface was passivated by a thin silicon nitrite coating. Results were compared with the diffusion length evaluated from internal quantum efficiency analysis in fabricated photovoltaic cells made of the same material, using spectral response and reflectivity measurements.</description><subject>Diffusion length</subject><subject>Epitaxial silicon</subject><subject>LBIC</subject><subject>Quantum efficiency</subject><subject>Solar cells</subject><subject>Thin films</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLxDAUhYMoOD7-gKus3LXepJlmAm5EfIHgRtchTW-cDG2qSSrMwv9uxnHt6nIu5xw4HyEXDGoGrL3a1GPCruYAqgZRA8gDsmAr2VRCCXFIFqA4q5YM5DE5SWkDAIxzviDfdwPaHL01A7VrE43NGH0y2U-BTo7mtQ80-cHbogezxZhot6WDf19n2qEZqQ_9bLGndo4RQ6Ym9OVXWkKp_JxNyPNI0TlvPQa7pSOaNEccizedkSNnhoTnf_eUvN3fvd4-Vs8vD0-3N8-VbRqWK7lSjvfCCgstk22rpADnkPdKGtW5pRJGoOskawXHpeyE44BNI61c2mYleHNKLve9H3H6nDFlPfpkcRhMwGlOuhFq1Uopi5HvjTZOKUV0-iP60cStZqB3pPVG70jrHWkNQhfSJXS9D2GZ8OUx6vS7FXsfC1zdT_6_-A-6B4o3</recordid><startdate>20091125</startdate><enddate>20091125</enddate><creator>Sayad, Y.</creator><creator>Amtablian, S.</creator><creator>Kaminski, A.</creator><creator>Blanc, D.</creator><creator>Carroy, P.</creator><creator>Nouiri, A.</creator><creator>Lemiti, M.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20091125</creationdate><title>Electrical characterisation of thin silicon layers by light beam induced current and internal quantum efficiency measurements</title><author>Sayad, Y. ; Amtablian, S. ; Kaminski, A. ; Blanc, D. ; Carroy, P. ; Nouiri, A. ; Lemiti, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-789f2d4c4c0617669740ffe2d97a9bf594a4efb71642e57b4f20e337c75c38423</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Diffusion length</topic><topic>Epitaxial silicon</topic><topic>LBIC</topic><topic>Quantum efficiency</topic><topic>Solar cells</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sayad, Y.</creatorcontrib><creatorcontrib>Amtablian, S.</creatorcontrib><creatorcontrib>Kaminski, A.</creatorcontrib><creatorcontrib>Blanc, D.</creatorcontrib><creatorcontrib>Carroy, P.</creatorcontrib><creatorcontrib>Nouiri, A.</creatorcontrib><creatorcontrib>Lemiti, M.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sayad, Y.</au><au>Amtablian, S.</au><au>Kaminski, A.</au><au>Blanc, D.</au><au>Carroy, P.</au><au>Nouiri, A.</au><au>Lemiti, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical characterisation of thin silicon layers by light beam induced current and internal quantum efficiency measurements</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2009-11-25</date><risdate>2009</risdate><volume>165</volume><issue>1</issue><spage>67</spage><epage>70</epage><pages>67-70</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>Thin crystalline silicon layers (50
μm) were grown by vapour phase epitaxy on monocrystalline substrates. Minority carrier diffusion length and surface recombination velocity were evaluated by light beam induced current experiment. Although it appeared difficult to apply existing analytical models to thin and high quality layers, multi-dimensional simulator DESSIS was used successfully to extract diffusion length of the order of 300
μm for p-type material and 80
μm for n-type material with surface recombination velocity of the order of 100–1000
cm
s
−1 when the surface was passivated by a thin silicon nitrite coating. Results were compared with the diffusion length evaluated from internal quantum efficiency analysis in fabricated photovoltaic cells made of the same material, using spectral response and reflectivity measurements.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mseb.2009.04.007</doi><tpages>4</tpages></addata></record> |
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| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.67-70 |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Diffusion length Epitaxial silicon LBIC Quantum efficiency Solar cells Thin films |
| title | Electrical characterisation of thin silicon layers by light beam induced current and internal quantum efficiency measurements |
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