Gain Compression and Thermal Analysis of a Sapphire-Bonded Photonic Crystal Microcavity Laser
Gain compression factor and thermal properties of a photonic crystal microcavity laser bonded on a sapphire substrate are extracted by analyzing wavelength shifts under different duty cycles. A high thermal resistance of 43 K/mW and a gain compression factor of 1.2 times 10 -16 cm 3 are obtained.
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| Veröffentlicht in: | IEEE photonics technology letters 2009-09, Vol.21 (17), p.1166-1168 |
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| container_end_page | 1168 |
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| container_issue | 17 |
| container_start_page | 1166 |
| container_title | IEEE photonics technology letters |
| container_volume | 21 |
| creator | Ling Lu Mock, A. Bagheri, M. Jiang-Rong Cao Sang-Jun Choi O'Brien, J. Dapkus, P.D. |
| description | Gain compression factor and thermal properties of a photonic crystal microcavity laser bonded on a sapphire substrate are extracted by analyzing wavelength shifts under different duty cycles. A high thermal resistance of 43 K/mW and a gain compression factor of 1.2 times 10 -16 cm 3 are obtained. |
| doi_str_mv | 10.1109/LPT.2009.2023228 |
| format | Article |
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A high thermal resistance of 43 K/mW and a gain compression factor of 1.2 times 10 -16 cm 3 are obtained.</description><subject>Bandwidth</subject><subject>Bonding</subject><subject>Charge carrier density</subject><subject>Compressing</subject><subject>Continuous wave (CW)</subject><subject>duty cycle</subject><subject>Gain</subject><subject>gain compression</subject><subject>Lasers</subject><subject>Lattices</subject><subject>Microcavities</subject><subject>microcavity laser</subject><subject>photonic crystal (PhC)</subject><subject>Photonic crystals</subject><subject>Scanning electron microscopy</subject><subject>Temperature</subject><subject>Thermal factors</subject><subject>Thermal properties</subject><subject>Thermal resistance</subject><subject>Wavelengths</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1Lw0AQxYMoWKt3wcviQU_R2d1MPo61aBUqFqxHCdvNhG5Js3E3Ffrfu6XFgwcvMwPzew9mXhRdcrjjHIr76Wx-JwCKUIQUIj-KBrxIeAw8S47DDGHmXOJpdOb9CoAnKJNB9DlRpmVju-4ceW9sy1RbsfmS3Fo1bNSqZuuNZ7Zmir2rrlsaR_GDbSuq2Gxpe9sazcZu6_uAvxrtrFbfpt-yqfLkzqOTWjWeLg59GH08Pc7Hz_H0bfIyHk1jLVH2MYcMEUVVZVAonS8IVarlIqtTrgTyhOc6VSkhkhAJSNK8phqgErDQiGkih9Ht3rdz9mtDvi_XxmtqGtWS3fgyzxB4gWkeyJt_SZkUWVZICOD1H3BlNy78I7hhnooiyzFAsIfC3d47qsvOmbVy25JDuYulDLGUu1jKQyxBcrWXGCL6xRHSsAT5A1MGh64</recordid><startdate>20090901</startdate><enddate>20090901</enddate><creator>Ling Lu</creator><creator>Mock, A.</creator><creator>Bagheri, M.</creator><creator>Jiang-Rong Cao</creator><creator>Sang-Jun Choi</creator><creator>O'Brien, J.</creator><creator>Dapkus, P.D.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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A high thermal resistance of 43 K/mW and a gain compression factor of 1.2 times 10 -16 cm 3 are obtained.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2009.2023228</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 2009-09, Vol.21 (17), p.1166-1168 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_34977930 |
| source | IEEE Electronic Library (IEL) |
| subjects | Bandwidth Bonding Charge carrier density Compressing Continuous wave (CW) duty cycle Gain gain compression Lasers Lattices Microcavities microcavity laser photonic crystal (PhC) Photonic crystals Scanning electron microscopy Temperature Thermal factors Thermal properties Thermal resistance Wavelengths |
| title | Gain Compression and Thermal Analysis of a Sapphire-Bonded Photonic Crystal Microcavity Laser |
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