Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3 interface
The current-voltage characteristics, carrier transport processes and electric pulse induced resistance switching behaviour have been investigated in Al/La0.7Ca0.3MnO3 (LCMO)/Pt sandwich structures. A stable resistance switching effect was obtained when a soft breakdown process occurred during negati...
Gespeichert in:
| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2009-09, Vol.42 (17), p.175408-175408 (7) |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 175408 (7) |
|---|---|
| container_issue | 17 |
| container_start_page | 175408 |
| container_title | Journal of physics. D, Applied physics |
| container_volume | 42 |
| creator | Yang, R Li, X M Yu, W D Gao, X D Liu, X J Cao, X Wang, Q Chen, L D |
| description | The current-voltage characteristics, carrier transport processes and electric pulse induced resistance switching behaviour have been investigated in Al/La0.7Ca0.3MnO3 (LCMO)/Pt sandwich structures. A stable resistance switching effect was obtained when a soft breakdown process occurred during negative voltage sweeping. Moreover, the trigger condition of the high resistance state is completely different from that of the low resistance state. Based on the investigation on the carrier transport processes of different resistance states, it is suggested that the resistance switching effect is closely related to the resistance change of the AlOx layer formed at the Al/LCMO interface. The local oxidation/reduction of the AlOx layer associated with the rupture/formation of conductive filaments is proposed to explain the resistance switching effect. A simple method to control the oxidation/reduction of the AlOx layer has been devised to improve the resistance switching properties by adjusting the thickness of the Al electrode. |
| doi_str_mv | 10.1088/0022-3727/42/17/175408 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_iop_p</sourceid><recordid>TN_cdi_proquest_miscellaneous_34935456</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34935456</sourcerecordid><originalsourceid>FETCH-LOGICAL-i296t-75980585140699cee868cdbab3532a8342d93b8d3bb125b024c4f3ca3167350a3</originalsourceid><addsrcrecordid>eNp1kU1P5DAMQCPESgzs_oVVLnArk8RJmh7RiI-VBnFg9xw5acoESluSDIh_T0eDuKCVLPvgZ8t6JuQ3Z-ecGbNkTIgKalEvpVjyeg4lmTkgCw6aV1pqOCSLL-iIHOf8yBhT2vAFKfcFXR-oi9PYY6Ip5JgLDj7Q_BaL38Thgbqwwdc4bhONQ7v1oaXunSLNY1eoSwGf2vFtoFMafciZYqFlE-hFv1wjO69Xc4Lb4Q7m4RJShz78JD867HP49VlPyL-ry7-rm2p9d_1ndbGuomh0qWrVGKaM4pLppvEhGG1869CBAoEGpGgbcKYF57hQjgnpZQcegesaFEM4IWf7vfNpL9uQi32O2Ye-xyGM22xBNqCk0jN4-gli9th3aRYQs51SfMb0bgVvBNSsmblqz8Vx-uru1NqdWiuF5bXd-7dT2808_85zZnd_-88cfADjZYd7</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34935456</pqid></control><display><type>article</type><title>Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3 interface</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Yang, R ; Li, X M ; Yu, W D ; Gao, X D ; Liu, X J ; Cao, X ; Wang, Q ; Chen, L D</creator><creatorcontrib>Yang, R ; Li, X M ; Yu, W D ; Gao, X D ; Liu, X J ; Cao, X ; Wang, Q ; Chen, L D</creatorcontrib><description>The current-voltage characteristics, carrier transport processes and electric pulse induced resistance switching behaviour have been investigated in Al/La0.7Ca0.3MnO3 (LCMO)/Pt sandwich structures. A stable resistance switching effect was obtained when a soft breakdown process occurred during negative voltage sweeping. Moreover, the trigger condition of the high resistance state is completely different from that of the low resistance state. Based on the investigation on the carrier transport processes of different resistance states, it is suggested that the resistance switching effect is closely related to the resistance change of the AlOx layer formed at the Al/LCMO interface. The local oxidation/reduction of the AlOx layer associated with the rupture/formation of conductive filaments is proposed to explain the resistance switching effect. A simple method to control the oxidation/reduction of the AlOx layer has been devised to improve the resistance switching properties by adjusting the thickness of the Al electrode.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/0022-3727/42/17/175408</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Metal-nonmetal contacts ; Physics</subject><ispartof>Journal of physics. D, Applied physics, 2009-09, Vol.42 (17), p.175408-175408 (7)</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0022-3727/42/17/175408/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27923,27924,53829,53909</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21923709$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yang, R</creatorcontrib><creatorcontrib>Li, X M</creatorcontrib><creatorcontrib>Yu, W D</creatorcontrib><creatorcontrib>Gao, X D</creatorcontrib><creatorcontrib>Liu, X J</creatorcontrib><creatorcontrib>Cao, X</creatorcontrib><creatorcontrib>Wang, Q</creatorcontrib><creatorcontrib>Chen, L D</creatorcontrib><title>Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3 interface</title><title>Journal of physics. D, Applied physics</title><description>The current-voltage characteristics, carrier transport processes and electric pulse induced resistance switching behaviour have been investigated in Al/La0.7Ca0.3MnO3 (LCMO)/Pt sandwich structures. A stable resistance switching effect was obtained when a soft breakdown process occurred during negative voltage sweeping. Moreover, the trigger condition of the high resistance state is completely different from that of the low resistance state. Based on the investigation on the carrier transport processes of different resistance states, it is suggested that the resistance switching effect is closely related to the resistance change of the AlOx layer formed at the Al/LCMO interface. The local oxidation/reduction of the AlOx layer associated with the rupture/formation of conductive filaments is proposed to explain the resistance switching effect. A simple method to control the oxidation/reduction of the AlOx layer has been devised to improve the resistance switching properties by adjusting the thickness of the Al electrode.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Metal-nonmetal contacts</subject><subject>Physics</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kU1P5DAMQCPESgzs_oVVLnArk8RJmh7RiI-VBnFg9xw5acoESluSDIh_T0eDuKCVLPvgZ8t6JuQ3Z-ecGbNkTIgKalEvpVjyeg4lmTkgCw6aV1pqOCSLL-iIHOf8yBhT2vAFKfcFXR-oi9PYY6Ip5JgLDj7Q_BaL38Thgbqwwdc4bhONQ7v1oaXunSLNY1eoSwGf2vFtoFMafciZYqFlE-hFv1wjO69Xc4Lb4Q7m4RJShz78JD867HP49VlPyL-ry7-rm2p9d_1ndbGuomh0qWrVGKaM4pLppvEhGG1869CBAoEGpGgbcKYF57hQjgnpZQcegesaFEM4IWf7vfNpL9uQi32O2Ye-xyGM22xBNqCk0jN4-gli9th3aRYQs51SfMb0bgVvBNSsmblqz8Vx-uru1NqdWiuF5bXd-7dT2808_85zZnd_-88cfADjZYd7</recordid><startdate>20090907</startdate><enddate>20090907</enddate><creator>Yang, R</creator><creator>Li, X M</creator><creator>Yu, W D</creator><creator>Gao, X D</creator><creator>Liu, X J</creator><creator>Cao, X</creator><creator>Wang, Q</creator><creator>Chen, L D</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090907</creationdate><title>Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3 interface</title><author>Yang, R ; Li, X M ; Yu, W D ; Gao, X D ; Liu, X J ; Cao, X ; Wang, Q ; Chen, L D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i296t-75980585140699cee868cdbab3532a8342d93b8d3bb125b024c4f3ca3167350a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Metal-nonmetal contacts</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, R</creatorcontrib><creatorcontrib>Li, X M</creatorcontrib><creatorcontrib>Yu, W D</creatorcontrib><creatorcontrib>Gao, X D</creatorcontrib><creatorcontrib>Liu, X J</creatorcontrib><creatorcontrib>Cao, X</creatorcontrib><creatorcontrib>Wang, Q</creatorcontrib><creatorcontrib>Chen, L D</creatorcontrib><collection>Pascal-Francis</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, R</au><au>Li, X M</au><au>Yu, W D</au><au>Gao, X D</au><au>Liu, X J</au><au>Cao, X</au><au>Wang, Q</au><au>Chen, L D</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3 interface</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><date>2009-09-07</date><risdate>2009</risdate><volume>42</volume><issue>17</issue><spage>175408</spage><epage>175408 (7)</epage><pages>175408-175408 (7)</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>The current-voltage characteristics, carrier transport processes and electric pulse induced resistance switching behaviour have been investigated in Al/La0.7Ca0.3MnO3 (LCMO)/Pt sandwich structures. A stable resistance switching effect was obtained when a soft breakdown process occurred during negative voltage sweeping. Moreover, the trigger condition of the high resistance state is completely different from that of the low resistance state. Based on the investigation on the carrier transport processes of different resistance states, it is suggested that the resistance switching effect is closely related to the resistance change of the AlOx layer formed at the Al/LCMO interface. The local oxidation/reduction of the AlOx layer associated with the rupture/formation of conductive filaments is proposed to explain the resistance switching effect. A simple method to control the oxidation/reduction of the AlOx layer has been devised to improve the resistance switching properties by adjusting the thickness of the Al electrode.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0022-3727/42/17/175408</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-3727 |
| ispartof | Journal of physics. D, Applied physics, 2009-09, Vol.42 (17), p.175408-175408 (7) |
| issn | 0022-3727 1361-6463 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_34935456 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Metal-nonmetal contacts Physics |
| title | Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3 interface |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T14%3A39%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_iop_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Stable%20bipolar%20resistance%20switching%20behaviour%20induced%20by%20a%20soft%20breakdown%20process%20at%20the%20Al/La0.7Ca0.3MnO3%20interface&rft.jtitle=Journal%20of%20physics.%20D,%20Applied%20physics&rft.au=Yang,%20R&rft.date=2009-09-07&rft.volume=42&rft.issue=17&rft.spage=175408&rft.epage=175408%20(7)&rft.pages=175408-175408%20(7)&rft.issn=0022-3727&rft.eissn=1361-6463&rft.coden=JPAPBE&rft_id=info:doi/10.1088/0022-3727/42/17/175408&rft_dat=%3Cproquest_iop_p%3E34935456%3C/proquest_iop_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=34935456&rft_id=info:pmid/&rfr_iscdi=true |