A periodic array of silicon pillars fabricated by photoelectrochemical etching
A periodic array of silicon pillars was photoelectrochemically fabricated using the two-step etching process with a n-type Si (1 0 0) substrate. Two key factors, backside illumination and anodic bias, were required to obtain a high-aspect ratio macropore array of silicon. It was found that the initi...
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| Veröffentlicht in: | Electrochimica acta 2009-11, Vol.54 (27), p.6978-6982 |
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| container_end_page | 6982 |
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| container_issue | 27 |
| container_start_page | 6978 |
| container_title | Electrochimica acta |
| container_volume | 54 |
| creator | Li, Xiaopeng Seo, Hong-Seok Um, Han-Don Jee, Sang-Won Cho, Yong Woo Yoo, Bongyoung Lee, Jung-Ho |
| description | A periodic array of silicon pillars was photoelectrochemically fabricated using the two-step etching process with a n-type Si (1
0
0) substrate. Two key factors, backside illumination and anodic bias, were required to obtain a high-aspect ratio macropore array of silicon. It was found that the initial pore could be separated into two different pores when the applied anodic bias was greater than a certain critical value. The pore size of the macroporous silicon with a high porosity was increased by anisotropic etching in an alkaline solution. Due to destruction of the pore sidewalls, KOH etching allowed for the fabrication of silicon pillars on a large-scale wafer with an improved uniformity. The anisotropic etching behavior of KOH solution led to necking of the silicon pillars when the etching time exceeded 60
s. |
| doi_str_mv | 10.1016/j.electacta.2009.06.094 |
| format | Article |
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0
0) substrate. Two key factors, backside illumination and anodic bias, were required to obtain a high-aspect ratio macropore array of silicon. It was found that the initial pore could be separated into two different pores when the applied anodic bias was greater than a certain critical value. The pore size of the macroporous silicon with a high porosity was increased by anisotropic etching in an alkaline solution. Due to destruction of the pore sidewalls, KOH etching allowed for the fabrication of silicon pillars on a large-scale wafer with an improved uniformity. The anisotropic etching behavior of KOH solution led to necking of the silicon pillars when the etching time exceeded 60
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0
0) substrate. Two key factors, backside illumination and anodic bias, were required to obtain a high-aspect ratio macropore array of silicon. It was found that the initial pore could be separated into two different pores when the applied anodic bias was greater than a certain critical value. The pore size of the macroporous silicon with a high porosity was increased by anisotropic etching in an alkaline solution. Due to destruction of the pore sidewalls, KOH etching allowed for the fabrication of silicon pillars on a large-scale wafer with an improved uniformity. The anisotropic etching behavior of KOH solution led to necking of the silicon pillars when the etching time exceeded 60
s.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>KOH post-etching</subject><subject>Macroporous silicon</subject><subject>Materials science</subject><subject>Photoelectrochemical etching</subject><subject>Physics</subject><subject>Pore separation</subject><subject>Silicon pillar array</subject><subject>Specific materials</subject><subject>Specific materials: fabrication, treatment, testing and analysis</subject><issn>0013-4686</issn><issn>1873-3859</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFUMtOwzAQtBBIlMI34AvcEtaJ7cTHquIlVXCBs-U4G-oqjYMdkPr3uBT1irTSHnYeO0PINYOcAZN3mxx7tJNJkxcAKgeZg-InZMbqqszKWqhTMgNgZcZlLc_JRYwbAKhkBTPysqAjBudbZ6kJweyo72h0vbN-oKPrexMi7UwTnDUTtrTZ0XHtJ__rGbxd4zZdeoqTXbvh45KcdaaPePW35-T94f5t-ZStXh-fl4tVZjkvpkyIVpaGoREIXEkULcimsE3bdU3La2wUh46LGgVT1oiqqStpy0JVRtaisVU5J7cH3TH4zy-Mk966aDG9O6D_irrkihVMqQSsDkAbfIwBOz0GtzVhpxnofX96o4_96X1_GqRO_SXmzZ-FiSlhF8xgXTzSiwIYl1An3OKAw5T322HQ0TocLLYuJF3devev1w8_T4uu</recordid><startdate>20091101</startdate><enddate>20091101</enddate><creator>Li, Xiaopeng</creator><creator>Seo, Hong-Seok</creator><creator>Um, Han-Don</creator><creator>Jee, Sang-Won</creator><creator>Cho, Yong Woo</creator><creator>Yoo, Bongyoung</creator><creator>Lee, Jung-Ho</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20091101</creationdate><title>A periodic array of silicon pillars fabricated by photoelectrochemical etching</title><author>Li, Xiaopeng ; Seo, Hong-Seok ; Um, Han-Don ; Jee, Sang-Won ; Cho, Yong Woo ; Yoo, Bongyoung ; Lee, Jung-Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c442t-55d63a1ea5e0496e5d06b2cbdffbd48eb940f458e519ca57b876c3297a685bc73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>KOH post-etching</topic><topic>Macroporous silicon</topic><topic>Materials science</topic><topic>Photoelectrochemical etching</topic><topic>Physics</topic><topic>Pore separation</topic><topic>Silicon pillar array</topic><topic>Specific materials</topic><topic>Specific materials: fabrication, treatment, testing and analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Xiaopeng</creatorcontrib><creatorcontrib>Seo, Hong-Seok</creatorcontrib><creatorcontrib>Um, Han-Don</creatorcontrib><creatorcontrib>Jee, Sang-Won</creatorcontrib><creatorcontrib>Cho, Yong Woo</creatorcontrib><creatorcontrib>Yoo, Bongyoung</creatorcontrib><creatorcontrib>Lee, Jung-Ho</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electrochimica acta</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Xiaopeng</au><au>Seo, Hong-Seok</au><au>Um, Han-Don</au><au>Jee, Sang-Won</au><au>Cho, Yong Woo</au><au>Yoo, Bongyoung</au><au>Lee, Jung-Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A periodic array of silicon pillars fabricated by photoelectrochemical etching</atitle><jtitle>Electrochimica acta</jtitle><date>2009-11-01</date><risdate>2009</risdate><volume>54</volume><issue>27</issue><spage>6978</spage><epage>6982</epage><pages>6978-6982</pages><issn>0013-4686</issn><eissn>1873-3859</eissn><coden>ELCAAV</coden><abstract>A periodic array of silicon pillars was photoelectrochemically fabricated using the two-step etching process with a n-type Si (1
0
0) substrate. Two key factors, backside illumination and anodic bias, were required to obtain a high-aspect ratio macropore array of silicon. It was found that the initial pore could be separated into two different pores when the applied anodic bias was greater than a certain critical value. The pore size of the macroporous silicon with a high porosity was increased by anisotropic etching in an alkaline solution. Due to destruction of the pore sidewalls, KOH etching allowed for the fabrication of silicon pillars on a large-scale wafer with an improved uniformity. The anisotropic etching behavior of KOH solution led to necking of the silicon pillars when the etching time exceeded 60
s.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.electacta.2009.06.094</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0013-4686 |
| ispartof | Electrochimica acta, 2009-11, Vol.54 (27), p.6978-6982 |
| issn | 0013-4686 1873-3859 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_34912199 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology KOH post-etching Macroporous silicon Materials science Photoelectrochemical etching Physics Pore separation Silicon pillar array Specific materials Specific materials: fabrication, treatment, testing and analysis |
| title | A periodic array of silicon pillars fabricated by photoelectrochemical etching |
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