Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films
Amorphous hydrogenated carbon-rich silicon–carbon alloy film (a-Si 0.3C 0.7:H) was deposited by reactive dc-magnetron sputtering of silicon target in argon–methane gas mixture. As-deposited film exhibits white photoluminescence at room temperature. After the deposition the samples were thermally ann...
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| Veröffentlicht in: | Solid state sciences 2009-10, Vol.11 (10), p.1833-1837 |
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| creator | Vasin, A.V. Ishikawa, Y. Kolesnik, S.P. Konchits, A.A. Lysenko, V.S. Nazarov, A.N. Rudko, G.Yu |
| description | Amorphous hydrogenated carbon-rich silicon–carbon alloy film (a-Si
0.3C
0.7:H) was deposited by reactive dc-magnetron sputtering of silicon target in argon–methane gas mixture. As-deposited film exhibits white photoluminescence at room temperature. After the deposition the samples were thermally annealed in dry Ar, wet Ar, or dry O
2 flow at 450
°C for 30
minutes that resulted in the enhancement of the photoluminescence intensity by a factor of about 5, 8 and 12 respectively. Spectral distribution of light emission was almost unchanged at the annealing in dry and wet argon while the oxidation in pure oxygen resulted in strong enhancement of a “blue” shoulder in the spectrum. EPR measurements at room temperature showed the decrease of spin concentration after thermal treatment in dry and wet argon and no EPR signal was detected after annealing in oxygen. FTIR and XPS measurements evidenced the formation of a-Si:O:C:H composite material after dry oxidation. Based on the measurements of photoluminescence in the temperature range 7–300
K it is suggested that light-emitting efficiency of a-Si
0.3C
0.7:H is determined by migration of the photo-excited carriers to non-radiative recombination centers. The physical mechanisms that can be involved in the strong enhancement of visible photoluminescence in Si:C:O:H layers are discussed.
[Display omitted] |
| doi_str_mv | 10.1016/j.solidstatesciences.2009.05.030 |
| format | Article |
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0.3C
0.7:H) was deposited by reactive dc-magnetron sputtering of silicon target in argon–methane gas mixture. As-deposited film exhibits white photoluminescence at room temperature. After the deposition the samples were thermally annealed in dry Ar, wet Ar, or dry O
2 flow at 450
°C for 30
minutes that resulted in the enhancement of the photoluminescence intensity by a factor of about 5, 8 and 12 respectively. Spectral distribution of light emission was almost unchanged at the annealing in dry and wet argon while the oxidation in pure oxygen resulted in strong enhancement of a “blue” shoulder in the spectrum. EPR measurements at room temperature showed the decrease of spin concentration after thermal treatment in dry and wet argon and no EPR signal was detected after annealing in oxygen. FTIR and XPS measurements evidenced the formation of a-Si:O:C:H composite material after dry oxidation. Based on the measurements of photoluminescence in the temperature range 7–300
K it is suggested that light-emitting efficiency of a-Si
0.3C
0.7:H is determined by migration of the photo-excited carriers to non-radiative recombination centers. The physical mechanisms that can be involved in the strong enhancement of visible photoluminescence in Si:C:O:H layers are discussed.
[Display omitted]</description><identifier>ISSN: 1293-2558</identifier><identifier>EISSN: 1873-3085</identifier><identifier>DOI: 10.1016/j.solidstatesciences.2009.05.030</identifier><language>eng</language><publisher>Issy-les-Moulineaux: Elsevier Masson SAS</publisher><subject>a-SiC:H ; Annealing ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Diffusion in solids ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Oxidation ; Photoluminescence ; Physics ; Transport properties of condensed matter (nonelectronic) ; White photoluminescence</subject><ispartof>Solid state sciences, 2009-10, Vol.11 (10), p.1833-1837</ispartof><rights>2009 Elsevier Masson SAS</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c403t-32303980c0fee9c71ee0fe81ab18d9158d2712203875aec62f038d14fa9bba933</citedby><cites>FETCH-LOGICAL-c403t-32303980c0fee9c71ee0fe81ab18d9158d2712203875aec62f038d14fa9bba933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S1293255809002088$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22207579$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Vasin, A.V.</creatorcontrib><creatorcontrib>Ishikawa, Y.</creatorcontrib><creatorcontrib>Kolesnik, S.P.</creatorcontrib><creatorcontrib>Konchits, A.A.</creatorcontrib><creatorcontrib>Lysenko, V.S.</creatorcontrib><creatorcontrib>Nazarov, A.N.</creatorcontrib><creatorcontrib>Rudko, G.Yu</creatorcontrib><title>Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films</title><title>Solid state sciences</title><description>Amorphous hydrogenated carbon-rich silicon–carbon alloy film (a-Si
0.3C
0.7:H) was deposited by reactive dc-magnetron sputtering of silicon target in argon–methane gas mixture. As-deposited film exhibits white photoluminescence at room temperature. After the deposition the samples were thermally annealed in dry Ar, wet Ar, or dry O
2 flow at 450
°C for 30
minutes that resulted in the enhancement of the photoluminescence intensity by a factor of about 5, 8 and 12 respectively. Spectral distribution of light emission was almost unchanged at the annealing in dry and wet argon while the oxidation in pure oxygen resulted in strong enhancement of a “blue” shoulder in the spectrum. EPR measurements at room temperature showed the decrease of spin concentration after thermal treatment in dry and wet argon and no EPR signal was detected after annealing in oxygen. FTIR and XPS measurements evidenced the formation of a-Si:O:C:H composite material after dry oxidation. Based on the measurements of photoluminescence in the temperature range 7–300
K it is suggested that light-emitting efficiency of a-Si
0.3C
0.7:H is determined by migration of the photo-excited carriers to non-radiative recombination centers. The physical mechanisms that can be involved in the strong enhancement of visible photoluminescence in Si:C:O:H layers are discussed.
[Display omitted]</description><subject>a-SiC:H</subject><subject>Annealing</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>Diffusion in solids</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Oxidation</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><subject>White photoluminescence</subject><issn>1293-2558</issn><issn>1873-3085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNUEFu2zAQFIoUaJLmD7wk6EXqkrQsyqcURlK3MJBDkjNBUct4DUl0SKaofx-6NnrppacdYGdndqYovnCoOPD5120V_UB9TCZhtISTxVgJgLaCugIJH4pzrhpZSlD1WcailaWoa_WpuIhxCwDzeTM7L4Y1vWxSiSOlRNML2wW_w5AII_OOmdGH3ca_RfZIi-XiYbFig9ljiMyZLpDN3j3r9sz_pt4k8tPhyJrQ-anM6w0z5Z_DFXM0jPFz8dGZIeLVaV4Wz_d3T8tVuX74_mP5bV3aGchUSiFBtgosOMTWNhwxI8VNx1Xf8lr1ouFCgFRNbdDOhcuw5zNn2q4zrZSXxc1RN6d5fcOY9EjR4jCYCXMYLWe5GSWbTLw9Em3wMQZ0ehdoNGGvOehDzXqr_61ZH2rWUOtcc5a4PnmZaM3ggpksxb86Iv_Z1E2beT-PPMzBfxEGfZLrKaBNuvf0_6bvEl2gPw</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>Vasin, A.V.</creator><creator>Ishikawa, Y.</creator><creator>Kolesnik, S.P.</creator><creator>Konchits, A.A.</creator><creator>Lysenko, V.S.</creator><creator>Nazarov, A.N.</creator><creator>Rudko, G.Yu</creator><general>Elsevier Masson SAS</general><general>Elsevier Masson</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20091001</creationdate><title>Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films</title><author>Vasin, A.V. ; Ishikawa, Y. ; Kolesnik, S.P. ; Konchits, A.A. ; Lysenko, V.S. ; Nazarov, A.N. ; Rudko, G.Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-32303980c0fee9c71ee0fe81ab18d9158d2712203875aec62f038d14fa9bba933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>a-SiC:H</topic><topic>Annealing</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>Diffusion in solids</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Oxidation</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><topic>White photoluminescence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vasin, A.V.</creatorcontrib><creatorcontrib>Ishikawa, Y.</creatorcontrib><creatorcontrib>Kolesnik, S.P.</creatorcontrib><creatorcontrib>Konchits, A.A.</creatorcontrib><creatorcontrib>Lysenko, V.S.</creatorcontrib><creatorcontrib>Nazarov, A.N.</creatorcontrib><creatorcontrib>Rudko, G.Yu</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid state sciences</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vasin, A.V.</au><au>Ishikawa, Y.</au><au>Kolesnik, S.P.</au><au>Konchits, A.A.</au><au>Lysenko, V.S.</au><au>Nazarov, A.N.</au><au>Rudko, G.Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films</atitle><jtitle>Solid state sciences</jtitle><date>2009-10-01</date><risdate>2009</risdate><volume>11</volume><issue>10</issue><spage>1833</spage><epage>1837</epage><pages>1833-1837</pages><issn>1293-2558</issn><eissn>1873-3085</eissn><abstract>Amorphous hydrogenated carbon-rich silicon–carbon alloy film (a-Si
0.3C
0.7:H) was deposited by reactive dc-magnetron sputtering of silicon target in argon–methane gas mixture. As-deposited film exhibits white photoluminescence at room temperature. After the deposition the samples were thermally annealed in dry Ar, wet Ar, or dry O
2 flow at 450
°C for 30
minutes that resulted in the enhancement of the photoluminescence intensity by a factor of about 5, 8 and 12 respectively. Spectral distribution of light emission was almost unchanged at the annealing in dry and wet argon while the oxidation in pure oxygen resulted in strong enhancement of a “blue” shoulder in the spectrum. EPR measurements at room temperature showed the decrease of spin concentration after thermal treatment in dry and wet argon and no EPR signal was detected after annealing in oxygen. FTIR and XPS measurements evidenced the formation of a-Si:O:C:H composite material after dry oxidation. Based on the measurements of photoluminescence in the temperature range 7–300
K it is suggested that light-emitting efficiency of a-Si
0.3C
0.7:H is determined by migration of the photo-excited carriers to non-radiative recombination centers. The physical mechanisms that can be involved in the strong enhancement of visible photoluminescence in Si:C:O:H layers are discussed.
[Display omitted]</abstract><cop>Issy-les-Moulineaux</cop><pub>Elsevier Masson SAS</pub><doi>10.1016/j.solidstatesciences.2009.05.030</doi><tpages>5</tpages></addata></record> |
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| subjects | a-SiC:H Annealing Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Diffusion in solids Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Oxidation Photoluminescence Physics Transport properties of condensed matter (nonelectronic) White photoluminescence |
| title | Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films |
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