A fully stress-parametrized model for the dielectric function of silicon-on-insulator layers
Variable angle spectroscopic ellipsometry was used to measure the dielectric function of a silicon-on-insulator sample that was bent to induce defined stress incrementally up to about 200 MPa, as determined from the sample curvature and verified by Raman spectroscopy. The dielectric function at 1.2-...
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| Veröffentlicht in: | Semiconductor science and technology 2009-04, Vol.24 (4), p.045013-045013 (4) |
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| container_end_page | 045013 (4) |
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| container_issue | 4 |
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| container_title | Semiconductor science and technology |
| container_volume | 24 |
| creator | Chong, Zhijiat Weisheit, Martin Hecker, Michael Zschech, Ehrenfried |
| description | Variable angle spectroscopic ellipsometry was used to measure the dielectric function of a silicon-on-insulator sample that was bent to induce defined stress incrementally up to about 200 MPa, as determined from the sample curvature and verified by Raman spectroscopy. The dielectric function at 1.2-6.4 eV of each stress state was modeled by four Tauc-Lorentz oscillators. By parametrizing all Tauc-Lorentz peak parameters with the induced stress, a Si dielectric function model was derived that depends solely on the stress in the layer, enabling accurate and fast stress determination by ellipsometry. |
| doi_str_mv | 10.1088/0268-1242/24/4/045013 |
| format | Article |
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| issn | 0268-1242 1361-6641 |
| language | eng |
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| source | Institute of Physics Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics |
| title | A fully stress-parametrized model for the dielectric function of silicon-on-insulator layers |
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