Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices
This paper deals with the design of single-stage differential low-noise amplifiers for ultra-wideband (UWB) applications, comparing state-of-the-art planar bulk and silicon-on-insulator (SOI) FinFET CMOS technologies featuring 45-nm gate length. To ensure a broadband input impedance matching, the g...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2009-05, Vol.56 (5), p.920-932 |
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| container_title | IEEE transactions on circuits and systems. I, Regular papers |
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| creator | Ponton, D. Palestri, P. Esseni, D. Selmi, L. Tiebout, M. Parvais, B. Siprak, D. Knoblinger, G. |
| description | This paper deals with the design of single-stage differential low-noise amplifiers for ultra-wideband (UWB) applications, comparing state-of-the-art planar bulk and silicon-on-insulator (SOI) FinFET CMOS technologies featuring 45-nm gate length. To ensure a broadband input impedance matching, the g m -boosted topology has been chosen. Furthermore, the amplifiers have been designed to work over the whole UWB band (3.1-10.6 GHz), while driving a capacitive load, which is a realistic assumption for direct conversion receivers where the amplifier directly drives a mixer. The simulations (based on compact models obtained from preliminary measurements) highlight that, at the present stage of the technology development, the planar version of the circuit appears to outperform the FinFET one. The main reason is the superior cutoff frequency of planar devices in the inversion region, which allows the achievement of noise figure and voltage gain comparable to the FinFET counterpart, with a smaller power consumption. |
| doi_str_mv | 10.1109/TCSI.2009.2015178 |
| format | Article |
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To ensure a broadband input impedance matching, the g m -boosted topology has been chosen. Furthermore, the amplifiers have been designed to work over the whole UWB band (3.1-10.6 GHz), while driving a capacitive load, which is a realistic assumption for direct conversion receivers where the amplifier directly drives a mixer. The simulations (based on compact models obtained from preliminary measurements) highlight that, at the present stage of the technology development, the planar version of the circuit appears to outperform the FinFET one. The main reason is the superior cutoff frequency of planar devices in the inversion region, which allows the achievement of noise figure and voltage gain comparable to the FinFET counterpart, with a smaller power consumption.</description><identifier>ISSN: 1549-8328</identifier><identifier>EISSN: 1558-0806</identifier><identifier>DOI: 10.1109/TCSI.2009.2015178</identifier><identifier>CODEN: ITCSCH</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amplifiers ; Broadband ; Broadband amplifiers ; Circuit simulation ; Circuits ; CMOS ; CMOS technology ; Design engineering ; Devices ; FinFETs ; g_{m} -boosted ; Impedance matching ; Inversions ; low-noise amplifier (LNA) ; Low-noise amplifiers ; Mixers ; multi resonance ; planar bulk ; RFCMOS ; Silicon on insulator technology ; silicon-on-insulator (SOI) FinFET ; Topology ; Ultra wideband technology ; ultra-wideband (UWB)</subject><ispartof>IEEE transactions on circuits and systems. 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I, Regular papers</title><addtitle>TCSI</addtitle><description>This paper deals with the design of single-stage differential low-noise amplifiers for ultra-wideband (UWB) applications, comparing state-of-the-art planar bulk and silicon-on-insulator (SOI) FinFET CMOS technologies featuring 45-nm gate length. To ensure a broadband input impedance matching, the g m -boosted topology has been chosen. Furthermore, the amplifiers have been designed to work over the whole UWB band (3.1-10.6 GHz), while driving a capacitive load, which is a realistic assumption for direct conversion receivers where the amplifier directly drives a mixer. The simulations (based on compact models obtained from preliminary measurements) highlight that, at the present stage of the technology development, the planar version of the circuit appears to outperform the FinFET one. The main reason is the superior cutoff frequency of planar devices in the inversion region, which allows the achievement of noise figure and voltage gain comparable to the FinFET counterpart, with a smaller power consumption.</description><subject>Amplifiers</subject><subject>Broadband</subject><subject>Broadband amplifiers</subject><subject>Circuit simulation</subject><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Design engineering</subject><subject>Devices</subject><subject>FinFETs</subject><subject>g_{m} -boosted</subject><subject>Impedance matching</subject><subject>Inversions</subject><subject>low-noise amplifier (LNA)</subject><subject>Low-noise amplifiers</subject><subject>Mixers</subject><subject>multi resonance</subject><subject>planar bulk</subject><subject>RFCMOS</subject><subject>Silicon on insulator technology</subject><subject>silicon-on-insulator (SOI) FinFET</subject><subject>Topology</subject><subject>Ultra wideband technology</subject><subject>ultra-wideband (UWB)</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1v1DAQhiMEEqXwAyouFgfEJcXjj8Tm1qYtrLSwlXYrjpHjTIpLYi_2bqse-O842ooDBy4zI80zr2bmLYoToKcAVH_cNOvFKaNU5wASavWsOAIpVUkVrZ7PtdCl4ky9LF6ldEcp05TDUfH7ApO79SQM5GbcRVN-dz12xvdkGR7Kb8ElJGfTdnSDw5iI80TI0k-k-bpakw3aHz6M4fbxE2nCtDXRpeDJOe4eED25Ho03kZzvx59kVlyvFuTK-avLDbnAe2cxvS5eDGZM-OYpHxc3udt8KZerz4vmbFlawdiuRK56ANOxqhus7cGgkXzopLBYUcFkB5yZWnPbo6K1ASF1JzTnwGuogWt-XLw_6G5j-LXHtGsnlyyOeUEM-9RyoSrKaZXBD_8FIT-NacVAZvTdP-hd2Eefz2hVBXXm5KwHB8jGkFLEod1GN5n4mJXa2bh2Nq6djWufjMszbw8zDhH_8iJ3KDD-B17lkaE</recordid><startdate>20090501</startdate><enddate>20090501</enddate><creator>Ponton, D.</creator><creator>Palestri, P.</creator><creator>Esseni, D.</creator><creator>Selmi, L.</creator><creator>Tiebout, M.</creator><creator>Parvais, B.</creator><creator>Siprak, D.</creator><creator>Knoblinger, G.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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I, Regular papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ponton, D.</au><au>Palestri, P.</au><au>Esseni, D.</au><au>Selmi, L.</au><au>Tiebout, M.</au><au>Parvais, B.</au><au>Siprak, D.</au><au>Knoblinger, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices</atitle><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle><stitle>TCSI</stitle><date>2009-05-01</date><risdate>2009</risdate><volume>56</volume><issue>5</issue><spage>920</spage><epage>932</epage><pages>920-932</pages><issn>1549-8328</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract>This paper deals with the design of single-stage differential low-noise amplifiers for ultra-wideband (UWB) applications, comparing state-of-the-art planar bulk and silicon-on-insulator (SOI) FinFET CMOS technologies featuring 45-nm gate length. To ensure a broadband input impedance matching, the g m -boosted topology has been chosen. Furthermore, the amplifiers have been designed to work over the whole UWB band (3.1-10.6 GHz), while driving a capacitive load, which is a realistic assumption for direct conversion receivers where the amplifier directly drives a mixer. The simulations (based on compact models obtained from preliminary measurements) highlight that, at the present stage of the technology development, the planar version of the circuit appears to outperform the FinFET one. The main reason is the superior cutoff frequency of planar devices in the inversion region, which allows the achievement of noise figure and voltage gain comparable to the FinFET counterpart, with a smaller power consumption.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSI.2009.2015178</doi><tpages>13</tpages></addata></record> |
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| subjects | Amplifiers Broadband Broadband amplifiers Circuit simulation Circuits CMOS CMOS technology Design engineering Devices FinFETs g_{m} -boosted Impedance matching Inversions low-noise amplifier (LNA) Low-noise amplifiers Mixers multi resonance planar bulk RFCMOS Silicon on insulator technology silicon-on-insulator (SOI) FinFET Topology Ultra wideband technology ultra-wideband (UWB) |
| title | Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices |
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