Diffusion behaviour of vanadium in GaN thin films studied by secondary ion mass spectrometry

A sandwiched multi-structure made of alternatively undoped and vanadium (V) doped GaN layers was grown on SiN-treated (0 0 0 1) sapphire substrates by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD). The V diffusion in GaN has been investigated in the temperature range of 10...

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Veröffentlicht in:	Semiconductor science and technology 2009-09, Vol.24 (9), p.095020-095020 (4)
Hauptverfasser:	Bchetnia, A, Saidi, C, Souissi, M, Boufaden, T, El Jani, B
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Exact sciences and technology Physics Transport properties of condensed matter (nonelectronic)
Online-Zugang:	Volltext
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