Carbon-Based Field-Effect Transistors for Nanoelectronics

In this review, the suitability of the major types of carbon nanostructures as conducting channels of field‐effect transistors (FETs) is compared on the basis of the dimensionality and size of their π‐conjugated system. For each of these materials, recent progress in its synthesis, electrical and st...

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Bibliographische Detailangaben

Veröffentlicht in:	Advanced materials (Weinheim) 2009-07, Vol.21 (25-26), p.2586-2600
Hauptverfasser:	Burghard, Marko, Klauk, Hagen, Kern, Klaus
Format:	Artikel
Sprache:	eng
Schlagworte:	carbon nanotubes field-effect transistors graphene organic semiconductors
Online-Zugang:	Volltext
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