Electronic band structure of calcium selenide under pressure

Energy band structures under pressure of calcium selenide (CaSe) were calculated using the plane-wave pseudopotential code CASTEP. The results show a progressive transition from a direct to an indirect gap semiconductor at a pressure of about 2 GPa, in the B1 phase. An insulator–conductor change was...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2008-09, Vol.403 (18), p.3022-3026
Hauptverfasser: Louail, L., Haddadi, K., Maouche, D., Ali Sahraoui, F., Hachemi, A.
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container_issue 18
container_start_page 3022
container_title Physica. B, Condensed matter
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creator Louail, L.
Haddadi, K.
Maouche, D.
Ali Sahraoui, F.
Hachemi, A.
description Energy band structures under pressure of calcium selenide (CaSe) were calculated using the plane-wave pseudopotential code CASTEP. The results show a progressive transition from a direct to an indirect gap semiconductor at a pressure of about 2 GPa, in the B1 phase. An insulator–conductor change was also observed at 70 GPa, in the B2 phase. Concerning CaSe, these two results could not be evidenced in previous literature. Hence, our work is a first attempt in this direction.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_34846870</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921452608001257</els_id><sourcerecordid>34846870</sourcerecordid><originalsourceid>FETCH-LOGICAL-c364t-4c8326c04b520be0330e0077a7eb5ccd6e11945be289a56e288d2727ee48a4953</originalsourceid><addsrcrecordid>eNp9kE1Lw0AQhhdRsFZ_gZdc9JY4-52AHqTUDyh40fOy2UxwS5rU3UTov3dri0fn8l6emeF9CLmmUFCg6m5dbD93sS4YQFkALwCqEzKjpeY5o1yekhlUjOZCMnVOLmJcQxqq6YzcLzt0Yxh677La9k0WxzC5cQqYDW3mbOf8tMkidtj7BrOpbzBk24AxJuSSnLW2i3h1zDn5eFq-L17y1dvz6-JxlTuuxJgLV3KmHIhaMqgROAcE0NpqrKVzjUJKKyFrZGVlpUpRNkwzjShKKyrJ5-T2cHcbhq8J42g2PjrsOtvjMEXDRSlUqSGB_AC6MMQYsDXb4Dc27AwFszdl1ubXlNmbMsBNMpW2bo7nbUyN22B75-PfKgPFJZV77uHAYer67TGY6Dz2DhsfkkTTDP7fPz9ZSH9M</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34846870</pqid></control><display><type>article</type><title>Electronic band structure of calcium selenide under pressure</title><source>Elsevier ScienceDirect Journals</source><creator>Louail, L. ; Haddadi, K. ; Maouche, D. ; Ali Sahraoui, F. ; Hachemi, A.</creator><creatorcontrib>Louail, L. ; Haddadi, K. ; Maouche, D. ; Ali Sahraoui, F. ; Hachemi, A.</creatorcontrib><description>Energy band structures under pressure of calcium selenide (CaSe) were calculated using the plane-wave pseudopotential code CASTEP. The results show a progressive transition from a direct to an indirect gap semiconductor at a pressure of about 2 GPa, in the B1 phase. An insulator–conductor change was also observed at 70 GPa, in the B2 phase. Concerning CaSe, these two results could not be evidenced in previous literature. Hence, our work is a first attempt in this direction.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2008.03.009</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Band structure ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron density of states and band structure of crystalline solids ; Electron states ; Exact sciences and technology ; Phase transition ; Physics ; Semiconductor compounds</subject><ispartof>Physica. B, Condensed matter, 2008-09, Vol.403 (18), p.3022-3026</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-4c8326c04b520be0330e0077a7eb5ccd6e11945be289a56e288d2727ee48a4953</citedby><cites>FETCH-LOGICAL-c364t-4c8326c04b520be0330e0077a7eb5ccd6e11945be289a56e288d2727ee48a4953</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2008.03.009$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,777,781,3537,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=20635159$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Louail, L.</creatorcontrib><creatorcontrib>Haddadi, K.</creatorcontrib><creatorcontrib>Maouche, D.</creatorcontrib><creatorcontrib>Ali Sahraoui, F.</creatorcontrib><creatorcontrib>Hachemi, A.</creatorcontrib><title>Electronic band structure of calcium selenide under pressure</title><title>Physica. B, Condensed matter</title><description>Energy band structures under pressure of calcium selenide (CaSe) were calculated using the plane-wave pseudopotential code CASTEP. The results show a progressive transition from a direct to an indirect gap semiconductor at a pressure of about 2 GPa, in the B1 phase. An insulator–conductor change was also observed at 70 GPa, in the B2 phase. Concerning CaSe, these two results could not be evidenced in previous literature. Hence, our work is a first attempt in this direction.</description><subject>Band structure</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron density of states and band structure of crystalline solids</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Phase transition</subject><subject>Physics</subject><subject>Semiconductor compounds</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kE1Lw0AQhhdRsFZ_gZdc9JY4-52AHqTUDyh40fOy2UxwS5rU3UTov3dri0fn8l6emeF9CLmmUFCg6m5dbD93sS4YQFkALwCqEzKjpeY5o1yekhlUjOZCMnVOLmJcQxqq6YzcLzt0Yxh677La9k0WxzC5cQqYDW3mbOf8tMkidtj7BrOpbzBk24AxJuSSnLW2i3h1zDn5eFq-L17y1dvz6-JxlTuuxJgLV3KmHIhaMqgROAcE0NpqrKVzjUJKKyFrZGVlpUpRNkwzjShKKyrJ5-T2cHcbhq8J42g2PjrsOtvjMEXDRSlUqSGB_AC6MMQYsDXb4Dc27AwFszdl1ubXlNmbMsBNMpW2bo7nbUyN22B75-PfKgPFJZV77uHAYer67TGY6Dz2DhsfkkTTDP7fPz9ZSH9M</recordid><startdate>20080901</startdate><enddate>20080901</enddate><creator>Louail, L.</creator><creator>Haddadi, K.</creator><creator>Maouche, D.</creator><creator>Ali Sahraoui, F.</creator><creator>Hachemi, A.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20080901</creationdate><title>Electronic band structure of calcium selenide under pressure</title><author>Louail, L. ; Haddadi, K. ; Maouche, D. ; Ali Sahraoui, F. ; Hachemi, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-4c8326c04b520be0330e0077a7eb5ccd6e11945be289a56e288d2727ee48a4953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Band structure</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron density of states and band structure of crystalline solids</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Phase transition</topic><topic>Physics</topic><topic>Semiconductor compounds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Louail, L.</creatorcontrib><creatorcontrib>Haddadi, K.</creatorcontrib><creatorcontrib>Maouche, D.</creatorcontrib><creatorcontrib>Ali Sahraoui, F.</creatorcontrib><creatorcontrib>Hachemi, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Louail, L.</au><au>Haddadi, K.</au><au>Maouche, D.</au><au>Ali Sahraoui, F.</au><au>Hachemi, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic band structure of calcium selenide under pressure</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2008-09-01</date><risdate>2008</risdate><volume>403</volume><issue>18</issue><spage>3022</spage><epage>3026</epage><pages>3022-3026</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>Energy band structures under pressure of calcium selenide (CaSe) were calculated using the plane-wave pseudopotential code CASTEP. The results show a progressive transition from a direct to an indirect gap semiconductor at a pressure of about 2 GPa, in the B1 phase. An insulator–conductor change was also observed at 70 GPa, in the B2 phase. Concerning CaSe, these two results could not be evidenced in previous literature. Hence, our work is a first attempt in this direction.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2008.03.009</doi><tpages>5</tpages></addata></record>
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subjects Band structure
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Phase transition
Physics
Semiconductor compounds
title Electronic band structure of calcium selenide under pressure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T09%3A18%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electronic%20band%20structure%20of%20calcium%20selenide%20under%20pressure&rft.jtitle=Physica.%20B,%20Condensed%20matter&rft.au=Louail,%20L.&rft.date=2008-09-01&rft.volume=403&rft.issue=18&rft.spage=3022&rft.epage=3026&rft.pages=3022-3026&rft.issn=0921-4526&rft.eissn=1873-2135&rft_id=info:doi/10.1016/j.physb.2008.03.009&rft_dat=%3Cproquest_cross%3E34846870%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=34846870&rft_id=info:pmid/&rft_els_id=S0921452608001257&rfr_iscdi=true