Electronic band structure of calcium selenide under pressure
Energy band structures under pressure of calcium selenide (CaSe) were calculated using the plane-wave pseudopotential code CASTEP. The results show a progressive transition from a direct to an indirect gap semiconductor at a pressure of about 2 GPa, in the B1 phase. An insulator–conductor change was...
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Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2008-09, Vol.403 (18), p.3022-3026 |
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creator | Louail, L. Haddadi, K. Maouche, D. Ali Sahraoui, F. Hachemi, A. |
description | Energy band structures under pressure of calcium selenide (CaSe) were calculated using the plane-wave pseudopotential code CASTEP. The results show a progressive transition from a direct to an indirect gap semiconductor at a pressure of about 2
GPa, in the B1 phase. An insulator–conductor change was also observed at 70
GPa, in the B2 phase. Concerning CaSe, these two results could not be evidenced in previous literature. Hence, our work is a first attempt in this direction. |
doi_str_mv | 10.1016/j.physb.2008.03.009 |
format | Article |
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GPa, in the B1 phase. An insulator–conductor change was also observed at 70
GPa, in the B2 phase. Concerning CaSe, these two results could not be evidenced in previous literature. Hence, our work is a first attempt in this direction.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2008.03.009</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Band structure ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron density of states and band structure of crystalline solids ; Electron states ; Exact sciences and technology ; Phase transition ; Physics ; Semiconductor compounds</subject><ispartof>Physica. B, Condensed matter, 2008-09, Vol.403 (18), p.3022-3026</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-4c8326c04b520be0330e0077a7eb5ccd6e11945be289a56e288d2727ee48a4953</citedby><cites>FETCH-LOGICAL-c364t-4c8326c04b520be0330e0077a7eb5ccd6e11945be289a56e288d2727ee48a4953</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2008.03.009$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,777,781,3537,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20635159$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Louail, L.</creatorcontrib><creatorcontrib>Haddadi, K.</creatorcontrib><creatorcontrib>Maouche, D.</creatorcontrib><creatorcontrib>Ali Sahraoui, F.</creatorcontrib><creatorcontrib>Hachemi, A.</creatorcontrib><title>Electronic band structure of calcium selenide under pressure</title><title>Physica. B, Condensed matter</title><description>Energy band structures under pressure of calcium selenide (CaSe) were calculated using the plane-wave pseudopotential code CASTEP. The results show a progressive transition from a direct to an indirect gap semiconductor at a pressure of about 2
GPa, in the B1 phase. An insulator–conductor change was also observed at 70
GPa, in the B2 phase. Concerning CaSe, these two results could not be evidenced in previous literature. Hence, our work is a first attempt in this direction.</description><subject>Band structure</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron density of states and band structure of crystalline solids</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Phase transition</subject><subject>Physics</subject><subject>Semiconductor compounds</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kE1Lw0AQhhdRsFZ_gZdc9JY4-52AHqTUDyh40fOy2UxwS5rU3UTov3dri0fn8l6emeF9CLmmUFCg6m5dbD93sS4YQFkALwCqEzKjpeY5o1yekhlUjOZCMnVOLmJcQxqq6YzcLzt0Yxh677La9k0WxzC5cQqYDW3mbOf8tMkidtj7BrOpbzBk24AxJuSSnLW2i3h1zDn5eFq-L17y1dvz6-JxlTuuxJgLV3KmHIhaMqgROAcE0NpqrKVzjUJKKyFrZGVlpUpRNkwzjShKKyrJ5-T2cHcbhq8J42g2PjrsOtvjMEXDRSlUqSGB_AC6MMQYsDXb4Dc27AwFszdl1ubXlNmbMsBNMpW2bo7nbUyN22B75-PfKgPFJZV77uHAYer67TGY6Dz2DhsfkkTTDP7fPz9ZSH9M</recordid><startdate>20080901</startdate><enddate>20080901</enddate><creator>Louail, L.</creator><creator>Haddadi, K.</creator><creator>Maouche, D.</creator><creator>Ali Sahraoui, F.</creator><creator>Hachemi, A.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20080901</creationdate><title>Electronic band structure of calcium selenide under pressure</title><author>Louail, L. ; Haddadi, K. ; Maouche, D. ; Ali Sahraoui, F. ; Hachemi, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-4c8326c04b520be0330e0077a7eb5ccd6e11945be289a56e288d2727ee48a4953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Band structure</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron density of states and band structure of crystalline solids</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Phase transition</topic><topic>Physics</topic><topic>Semiconductor compounds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Louail, L.</creatorcontrib><creatorcontrib>Haddadi, K.</creatorcontrib><creatorcontrib>Maouche, D.</creatorcontrib><creatorcontrib>Ali Sahraoui, F.</creatorcontrib><creatorcontrib>Hachemi, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Louail, L.</au><au>Haddadi, K.</au><au>Maouche, D.</au><au>Ali Sahraoui, F.</au><au>Hachemi, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic band structure of calcium selenide under pressure</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2008-09-01</date><risdate>2008</risdate><volume>403</volume><issue>18</issue><spage>3022</spage><epage>3026</epage><pages>3022-3026</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>Energy band structures under pressure of calcium selenide (CaSe) were calculated using the plane-wave pseudopotential code CASTEP. The results show a progressive transition from a direct to an indirect gap semiconductor at a pressure of about 2
GPa, in the B1 phase. An insulator–conductor change was also observed at 70
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subjects | Band structure Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron density of states and band structure of crystalline solids Electron states Exact sciences and technology Phase transition Physics Semiconductor compounds |
title | Electronic band structure of calcium selenide under pressure |
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