Silicon template fabrication for imprint lithography with a very smooth side wall profile
A new fabrication process of silicon template for nanoimprint lithography is developed. A very fine and high aspect Si lines are fabricated by the combination of plasma process for Si deep etching and anisotropic wet etching by potassium hydroxide solution (KOH treatment). Improved switching process...
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| Veröffentlicht in: | Thin solid films 2009-05, Vol.517 (14), p.3862-3865 |
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| container_end_page | 3865 |
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| container_issue | 14 |
| container_start_page | 3862 |
| container_title | Thin solid films |
| container_volume | 517 |
| creator | Kawata, Hiroaki Matsue, Masato Kubo, Kensuke Yasuda, Masaaki Hirai, Yoshihiko |
| description | A new fabrication process of silicon template for nanoimprint lithography is developed. A very fine and high aspect Si lines are fabricated by the combination of plasma process for Si deep etching and anisotropic wet etching by potassium hydroxide solution (KOH treatment). Improved switching process, which consists of sequentially alternating etching and deposition steps, is used as the Si deep etching. The side wall profile of the Si lines can be controlled by the deposition step time. Line pattern with vertical side wall is fabricated. The line width and height are 0.2 µm and 2.9 µm, respectively. By the KOH treatment the side wall corrugation can be reduced and the line width also decreases. Very fine line of 45 nm width at the line top with the pattern height of 3.0 µm can be fabricated by use of the line width shrink by the KOH treatment. |
| doi_str_mv | 10.1016/j.tsf.2009.01.162 |
| format | Article |
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A very fine and high aspect Si lines are fabricated by the combination of plasma process for Si deep etching and anisotropic wet etching by potassium hydroxide solution (KOH treatment). Improved switching process, which consists of sequentially alternating etching and deposition steps, is used as the Si deep etching. The side wall profile of the Si lines can be controlled by the deposition step time. Line pattern with vertical side wall is fabricated. The line width and height are 0.2 µm and 2.9 µm, respectively. By the KOH treatment the side wall corrugation can be reduced and the line width also decreases. 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A very fine and high aspect Si lines are fabricated by the combination of plasma process for Si deep etching and anisotropic wet etching by potassium hydroxide solution (KOH treatment). Improved switching process, which consists of sequentially alternating etching and deposition steps, is used as the Si deep etching. The side wall profile of the Si lines can be controlled by the deposition step time. Line pattern with vertical side wall is fabricated. The line width and height are 0.2 µm and 2.9 µm, respectively. By the KOH treatment the side wall corrugation can be reduced and the line width also decreases. Very fine line of 45 nm width at the line top with the pattern height of 3.0 µm can be fabricated by use of the line width shrink by the KOH treatment.</description><subject>Anisotropic etching</subject><subject>Bosch process</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Growth from solutions</subject><subject>Imprint template</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of nanofabrication</subject><subject>Nanoscale pattern formation</subject><subject>Physics</subject><subject>Potassium hydroxide</subject><subject>Scalloping</subject><subject>Silicon deep etching</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9ULtuFDEUtRBILCEfQOcGupnca8_aM6JCESRIkSiAIpXl9VwTrzzjxXYS7d_jaCPKVPeh89A5jH1A6BFQXez7WnwvAKYesEclXrENjnrqhJb4mm0ABugUTPCWvStlDwAohNyw258hBpdWXmk5RFuJe7vLwdka2tOnzMNyyGGtPIZ6l_5ke7g78se2c8sfKB95WVJqVwkz8UcbIz_k5EOk9-yNt7HQ-fM8Y7-_ff11ed3d_Lj6fvnlpnNyO9YOnYMRtrvtSPMghuY-zgTWapoEkBKEg5g17RR5PUo9KYRB7oSySnsPuJVn7NNJt_n-vadSzRKKoxjtSum-GDmMME5CNiCegC6nUjJ504ItNh8Ngnkq0exNK9E8lWgATSuxcT4-i9vibPTZri6U_0SBGqXSuuE-n3DUkj4Eyqa4QKujOWRy1cwpvODyD_YZiEc</recordid><startdate>20090529</startdate><enddate>20090529</enddate><creator>Kawata, Hiroaki</creator><creator>Matsue, Masato</creator><creator>Kubo, Kensuke</creator><creator>Yasuda, Masaaki</creator><creator>Hirai, Yoshihiko</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20090529</creationdate><title>Silicon template fabrication for imprint lithography with a very smooth side wall profile</title><author>Kawata, Hiroaki ; Matsue, Masato ; Kubo, Kensuke ; Yasuda, Masaaki ; Hirai, Yoshihiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-1cc0805b58ed424fab8de0aa7e920e62e142d7eb6ef7837961043b26a67ff0153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Anisotropic etching</topic><topic>Bosch process</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Growth from solutions</topic><topic>Imprint template</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of nanofabrication</topic><topic>Nanoscale pattern formation</topic><topic>Physics</topic><topic>Potassium hydroxide</topic><topic>Scalloping</topic><topic>Silicon deep etching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kawata, Hiroaki</creatorcontrib><creatorcontrib>Matsue, Masato</creatorcontrib><creatorcontrib>Kubo, Kensuke</creatorcontrib><creatorcontrib>Yasuda, Masaaki</creatorcontrib><creatorcontrib>Hirai, Yoshihiko</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kawata, Hiroaki</au><au>Matsue, Masato</au><au>Kubo, Kensuke</au><au>Yasuda, Masaaki</au><au>Hirai, Yoshihiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon template fabrication for imprint lithography with a very smooth side wall profile</atitle><jtitle>Thin solid films</jtitle><date>2009-05-29</date><risdate>2009</risdate><volume>517</volume><issue>14</issue><spage>3862</spage><epage>3865</epage><pages>3862-3865</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>A new fabrication process of silicon template for nanoimprint lithography is developed. 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| ispartof | Thin solid films, 2009-05, Vol.517 (14), p.3862-3865 |
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| subjects | Anisotropic etching Bosch process Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from solutions Imprint template Materials science Methods of crystal growth physics of crystal growth Methods of nanofabrication Nanoscale pattern formation Physics Potassium hydroxide Scalloping Silicon deep etching |
| title | Silicon template fabrication for imprint lithography with a very smooth side wall profile |
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