Application of level set method in simulation of surface roughness in nanotechnologies
One of the limiting factors in applications of plasma etching in nanotechnologies in general will be the control of plasma induced roughness or perhaps control of surface roughness by plasma etching. In this paper we consider roughening of nanocomposite materials during plasma etching for two etchin...
Gespeichert in:
| Veröffentlicht in: | Thin solid films 2009-05, Vol.517 (14), p.3954-3957 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3957 |
|---|---|
| container_issue | 14 |
| container_start_page | 3954 |
| container_title | Thin solid films |
| container_volume | 517 |
| creator | RADMILOVIC-RADJENOVIC, M RADJENOVIC, B PETROVIC, Z. L. J |
| description | One of the limiting factors in applications of plasma etching in nanotechnologies in general will be the control of plasma induced roughness or perhaps control of surface roughness by plasma etching. In this paper we consider roughening of nanocomposite materials during plasma etching for two etching modes (isotropic and anisotropic) by using a level set method. It was found that the presence of two phases with different etch rates (the ratio of the two etch rates is
s and the abundance of one phase is
p) affects the evolution of the surface roughness and that the etch rate is higher during the isotropic process as compared to the anisotropic process for all values of
s and
p. At the same time, in case of isotropic process, the higher s leads to a higher overall etch rate. The obtained results apart from their theoretical relevance, have practical implications for surface treatment of nanocomposite materials. |
| doi_str_mv | 10.1016/j.tsf.2009.01.123 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_34796700</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609009001813</els_id><sourcerecordid>34796700</sourcerecordid><originalsourceid>FETCH-LOGICAL-c358t-6c158ba1ec920737103cdbe3dcba65f9987d7d2e7c7291620a52b944651400a63</originalsourceid><addsrcrecordid>eNp9kDFv2zAQhYkiBeqk_QHdtDSblDtSEk1kCoKkLWAgS9uVoKlTTIMmXZ4UIP--Mhxk7HTL997DfUJ8RWgQsL_ZNxOPjQQwDWCDUn0QK1xrU0ut8EKsAFqoezDwSVwy7wEApVQr8efueIzBuynkVOWxivRCsWKaqgNNuzxUIVUcDnN8J3guo_NUlTw_7xIxn5DkUp7I71KO-TkQfxYfRxeZvrzdK_H78eHX_Y968_T95_3dpvaqW09177Fbbx2SNxK00gjKD1tSg9-6vhuNWetBD5K019JgL8F1cmvatu-wBXC9uhLX595jyX9n4skeAnuK0SXKM1vVatNrgAXEM-hLZi402mMJB1deLYI9GbR7uxi0J4MW0C4Gl8y3t3LH3sWxuOQDvwclalTn7tszR8unL4GKZR8oeRpCIT_ZIYf_rPwDfTyGgQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34796700</pqid></control><display><type>article</type><title>Application of level set method in simulation of surface roughness in nanotechnologies</title><source>Elsevier ScienceDirect Journals</source><creator>RADMILOVIC-RADJENOVIC, M ; RADJENOVIC, B ; PETROVIC, Z. L. J</creator><creatorcontrib>RADMILOVIC-RADJENOVIC, M ; RADJENOVIC, B ; PETROVIC, Z. L. J</creatorcontrib><description>One of the limiting factors in applications of plasma etching in nanotechnologies in general will be the control of plasma induced roughness or perhaps control of surface roughness by plasma etching. In this paper we consider roughening of nanocomposite materials during plasma etching for two etching modes (isotropic and anisotropic) by using a level set method. It was found that the presence of two phases with different etch rates (the ratio of the two etch rates is
s and the abundance of one phase is
p) affects the evolution of the surface roughness and that the etch rate is higher during the isotropic process as compared to the anisotropic process for all values of
s and
p. At the same time, in case of isotropic process, the higher s leads to a higher overall etch rate. The obtained results apart from their theoretical relevance, have practical implications for surface treatment of nanocomposite materials.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2009.01.123</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electronics ; Etching ; Etching and cleaning ; Exact sciences and technology ; Integrated circuits ; Microelectronic fabrication (materials and surfaces technology) ; Nanocomposite ; Physics ; Physics of gases, plasmas and electric discharges ; Physics of plasmas and electric discharges ; Plasma applications ; Roughness ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Thin solid films, 2009-05, Vol.517 (14), p.3954-3957</ispartof><rights>2009 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-6c158ba1ec920737103cdbe3dcba65f9987d7d2e7c7291620a52b944651400a63</citedby><cites>FETCH-LOGICAL-c358t-6c158ba1ec920737103cdbe3dcba65f9987d7d2e7c7291620a52b944651400a63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2009.01.123$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,777,781,786,787,3537,23911,23912,25121,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21713700$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>RADMILOVIC-RADJENOVIC, M</creatorcontrib><creatorcontrib>RADJENOVIC, B</creatorcontrib><creatorcontrib>PETROVIC, Z. L. J</creatorcontrib><title>Application of level set method in simulation of surface roughness in nanotechnologies</title><title>Thin solid films</title><description>One of the limiting factors in applications of plasma etching in nanotechnologies in general will be the control of plasma induced roughness or perhaps control of surface roughness by plasma etching. In this paper we consider roughening of nanocomposite materials during plasma etching for two etching modes (isotropic and anisotropic) by using a level set method. It was found that the presence of two phases with different etch rates (the ratio of the two etch rates is
s and the abundance of one phase is
p) affects the evolution of the surface roughness and that the etch rate is higher during the isotropic process as compared to the anisotropic process for all values of
s and
p. At the same time, in case of isotropic process, the higher s leads to a higher overall etch rate. The obtained results apart from their theoretical relevance, have practical implications for surface treatment of nanocomposite materials.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Etching</subject><subject>Etching and cleaning</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Nanocomposite</subject><subject>Physics</subject><subject>Physics of gases, plasmas and electric discharges</subject><subject>Physics of plasmas and electric discharges</subject><subject>Plasma applications</subject><subject>Roughness</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kDFv2zAQhYkiBeqk_QHdtDSblDtSEk1kCoKkLWAgS9uVoKlTTIMmXZ4UIP--Mhxk7HTL997DfUJ8RWgQsL_ZNxOPjQQwDWCDUn0QK1xrU0ut8EKsAFqoezDwSVwy7wEApVQr8efueIzBuynkVOWxivRCsWKaqgNNuzxUIVUcDnN8J3guo_NUlTw_7xIxn5DkUp7I71KO-TkQfxYfRxeZvrzdK_H78eHX_Y968_T95_3dpvaqW09177Fbbx2SNxK00gjKD1tSg9-6vhuNWetBD5K019JgL8F1cmvatu-wBXC9uhLX595jyX9n4skeAnuK0SXKM1vVatNrgAXEM-hLZi402mMJB1deLYI9GbR7uxi0J4MW0C4Gl8y3t3LH3sWxuOQDvwclalTn7tszR8unL4GKZR8oeRpCIT_ZIYf_rPwDfTyGgQ</recordid><startdate>20090529</startdate><enddate>20090529</enddate><creator>RADMILOVIC-RADJENOVIC, M</creator><creator>RADJENOVIC, B</creator><creator>PETROVIC, Z. L. J</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20090529</creationdate><title>Application of level set method in simulation of surface roughness in nanotechnologies</title><author>RADMILOVIC-RADJENOVIC, M ; RADJENOVIC, B ; PETROVIC, Z. L. J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-6c158ba1ec920737103cdbe3dcba65f9987d7d2e7c7291620a52b944651400a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Etching</topic><topic>Etching and cleaning</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Nanocomposite</topic><topic>Physics</topic><topic>Physics of gases, plasmas and electric discharges</topic><topic>Physics of plasmas and electric discharges</topic><topic>Plasma applications</topic><topic>Roughness</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>RADMILOVIC-RADJENOVIC, M</creatorcontrib><creatorcontrib>RADJENOVIC, B</creatorcontrib><creatorcontrib>PETROVIC, Z. L. J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>RADMILOVIC-RADJENOVIC, M</au><au>RADJENOVIC, B</au><au>PETROVIC, Z. L. J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Application of level set method in simulation of surface roughness in nanotechnologies</atitle><jtitle>Thin solid films</jtitle><date>2009-05-29</date><risdate>2009</risdate><volume>517</volume><issue>14</issue><spage>3954</spage><epage>3957</epage><pages>3954-3957</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>One of the limiting factors in applications of plasma etching in nanotechnologies in general will be the control of plasma induced roughness or perhaps control of surface roughness by plasma etching. In this paper we consider roughening of nanocomposite materials during plasma etching for two etching modes (isotropic and anisotropic) by using a level set method. It was found that the presence of two phases with different etch rates (the ratio of the two etch rates is
s and the abundance of one phase is
p) affects the evolution of the surface roughness and that the etch rate is higher during the isotropic process as compared to the anisotropic process for all values of
s and
p. At the same time, in case of isotropic process, the higher s leads to a higher overall etch rate. The obtained results apart from their theoretical relevance, have practical implications for surface treatment of nanocomposite materials.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2009.01.123</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2009-05, Vol.517 (14), p.3954-3957 |
| issn | 0040-6090 1879-2731 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_34796700 |
| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Etching Etching and cleaning Exact sciences and technology Integrated circuits Microelectronic fabrication (materials and surfaces technology) Nanocomposite Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Roughness Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Application of level set method in simulation of surface roughness in nanotechnologies |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T10%3A50%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Application%20of%20level%20set%20method%20in%20simulation%20of%20surface%20roughness%20in%20nanotechnologies&rft.jtitle=Thin%20solid%20films&rft.au=RADMILOVIC-RADJENOVIC,%20M&rft.date=2009-05-29&rft.volume=517&rft.issue=14&rft.spage=3954&rft.epage=3957&rft.pages=3954-3957&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/j.tsf.2009.01.123&rft_dat=%3Cproquest_cross%3E34796700%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=34796700&rft_id=info:pmid/&rft_els_id=S0040609009001813&rfr_iscdi=true |