Inverted Pyramid Defects in 4H-SiC Epilayers
In this work we identified the nucleation sites of inverted pyramid defects in 4H-SiC epilayers using AFM and KOH etching and proposed a mechanism for its formation. Partial dislocations, bounding the stacking faults, mostly aligned along the directions, were found at the base of the inverted pyram...
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| Veröffentlicht in: | Materials science forum 2009-01, Vol.615-617, p.125-128 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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