Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering
We have investigated the electrical, optical, structural, and annealing properties of indium zinc tin oxide (IZTO) films prepared by an unbalanced radio frequency (RF) magnetron sputtering at room temperature, in a pure Ar ambient environment. It was found that the electrical and optical properties...
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| Veröffentlicht in: | Thin solid films 2009-07, Vol.517 (18), p.5563-5568 |
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| creator | Park, Ho-Kyun Jeong, Jin-A Park, Yong-Seok Kim, Han-Ki Cho, Woon-Jo |
| description | We have investigated the electrical, optical, structural, and annealing properties of indium zinc tin oxide (IZTO) films prepared by an unbalanced radio frequency (RF) magnetron sputtering at room temperature, in a pure Ar ambient environment. It was found that the electrical and optical properties of unbalanced RF sputter grown IZTO films at room temperature were influenced by RF power and working pressure. At optimized growth condition, we could obtain the IZTO film with the low resistivity of 3.77
×
10
−
4
Ω cm, high transparency of ~
87% and figure of merit value of 21.2
×
10
−
3
Ω
−
1
, without the post annealing process, even though it was completely an amorphous structure due to low substrate temperature. In addition, the field emission scanning electron microscope analysis results showed that all IZTO films are amorphous structures with very smooth surfaces regardless of the RF power and working pressure. However, the rapid thermal annealing process above the temperature of 400 °C lead to an abrupt increase in resistivity and sheet resistance due to the transition of film structure from amorphous to crystalline, which was confirmed by X-ray diffraction examination. |
| doi_str_mv | 10.1016/j.tsf.2009.02.138 |
| format | Article |
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×
10
−
4
Ω cm, high transparency of ~
87% and figure of merit value of 21.2
×
10
−
3
Ω
−
1
, without the post annealing process, even though it was completely an amorphous structure due to low substrate temperature. In addition, the field emission scanning electron microscope analysis results showed that all IZTO films are amorphous structures with very smooth surfaces regardless of the RF power and working pressure. However, the rapid thermal annealing process above the temperature of 400 °C lead to an abrupt increase in resistivity and sheet resistance due to the transition of film structure from amorphous to crystalline, which was confirmed by X-ray diffraction examination.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2009.02.138</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Indium zinc tin oxide ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Organic light emitting diodes ; Physics ; Radio-frequency magnetron sputtering ; Resistivity ; Scanning electron microscopy ; Transmission electron microscopy ; Transparent conducting oxide ; X-ray diffraction</subject><ispartof>Thin solid films, 2009-07, Vol.517 (18), p.5563-5568</ispartof><rights>2009 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-aecf7160f8faf99d571510cc2dc492865d0575214de5790d9b7e43484c1fba543</citedby><cites>FETCH-LOGICAL-c358t-aecf7160f8faf99d571510cc2dc492865d0575214de5790d9b7e43484c1fba543</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2009.02.138$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,781,785,3551,27929,27930,46000</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21550420$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, Ho-Kyun</creatorcontrib><creatorcontrib>Jeong, Jin-A</creatorcontrib><creatorcontrib>Park, Yong-Seok</creatorcontrib><creatorcontrib>Kim, Han-Ki</creatorcontrib><creatorcontrib>Cho, Woon-Jo</creatorcontrib><title>Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering</title><title>Thin solid films</title><description>We have investigated the electrical, optical, structural, and annealing properties of indium zinc tin oxide (IZTO) films prepared by an unbalanced radio frequency (RF) magnetron sputtering at room temperature, in a pure Ar ambient environment. It was found that the electrical and optical properties of unbalanced RF sputter grown IZTO films at room temperature were influenced by RF power and working pressure. At optimized growth condition, we could obtain the IZTO film with the low resistivity of 3.77
×
10
−
4
Ω cm, high transparency of ~
87% and figure of merit value of 21.2
×
10
−
3
Ω
−
1
, without the post annealing process, even though it was completely an amorphous structure due to low substrate temperature. In addition, the field emission scanning electron microscope analysis results showed that all IZTO films are amorphous structures with very smooth surfaces regardless of the RF power and working pressure. However, the rapid thermal annealing process above the temperature of 400 °C lead to an abrupt increase in resistivity and sheet resistance due to the transition of film structure from amorphous to crystalline, which was confirmed by X-ray diffraction examination.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Indium zinc tin oxide</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Organic light emitting diodes</subject><subject>Physics</subject><subject>Radio-frequency magnetron sputtering</subject><subject>Resistivity</subject><subject>Scanning electron microscopy</subject><subject>Transmission electron microscopy</subject><subject>Transparent conducting oxide</subject><subject>X-ray diffraction</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kDGPEzEQhS0EEuHgB9C5gYpdxl47uxYVOh1w0klXAA2N5djjyNHGXmwvp7T8chxyoqSaKd57M-8j5DWDngHbvj_0tfieA6geeM-G6QnZsGlUHR8H9pRsAAR0W1DwnLwo5QAAjPNhQ37fzGhrDtbM72ha6mUx0dFS82rrms1Ml5wWzDVgocnT2_gjfo33FP86k0Pqw3wsdJ_TQ6S7E13jzswmWnQ0GxcS9Rl_rhjtiR7NPmIzRVqWtVbMIe5fkmfezAVfPc4r8v3TzbfrL93d_efb6493nR3kVDuD1o9sC37yxivl5MgkA2u5s0LxaSsdyFFyJhzKUYFTuxHFICZhmd8ZKYYr8vaS2-q0d0rVx1Aszu1VTGvRgxilmpRqQnYR2pxKyej1ksPR5JNmoM-09UE32vpMWwPXjXbzvHkMN6Uh9Ln1D-WfkTMpQXBoug8XHbamvwJmXWzAM6uQG07tUvjPlT-VCJe9</recordid><startdate>20090731</startdate><enddate>20090731</enddate><creator>Park, Ho-Kyun</creator><creator>Jeong, Jin-A</creator><creator>Park, Yong-Seok</creator><creator>Kim, Han-Ki</creator><creator>Cho, Woon-Jo</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20090731</creationdate><title>Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering</title><author>Park, Ho-Kyun ; Jeong, Jin-A ; Park, Yong-Seok ; Kim, Han-Ki ; Cho, Woon-Jo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-aecf7160f8faf99d571510cc2dc492865d0575214de5790d9b7e43484c1fba543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Indium zinc tin oxide</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Organic light emitting diodes</topic><topic>Physics</topic><topic>Radio-frequency magnetron sputtering</topic><topic>Resistivity</topic><topic>Scanning electron microscopy</topic><topic>Transmission electron microscopy</topic><topic>Transparent conducting oxide</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Ho-Kyun</creatorcontrib><creatorcontrib>Jeong, Jin-A</creatorcontrib><creatorcontrib>Park, Yong-Seok</creatorcontrib><creatorcontrib>Kim, Han-Ki</creatorcontrib><creatorcontrib>Cho, Woon-Jo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Ho-Kyun</au><au>Jeong, Jin-A</au><au>Park, Yong-Seok</au><au>Kim, Han-Ki</au><au>Cho, Woon-Jo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering</atitle><jtitle>Thin solid films</jtitle><date>2009-07-31</date><risdate>2009</risdate><volume>517</volume><issue>18</issue><spage>5563</spage><epage>5568</epage><pages>5563-5568</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>We have investigated the electrical, optical, structural, and annealing properties of indium zinc tin oxide (IZTO) films prepared by an unbalanced radio frequency (RF) magnetron sputtering at room temperature, in a pure Ar ambient environment. It was found that the electrical and optical properties of unbalanced RF sputter grown IZTO films at room temperature were influenced by RF power and working pressure. At optimized growth condition, we could obtain the IZTO film with the low resistivity of 3.77
×
10
−
4
Ω cm, high transparency of ~
87% and figure of merit value of 21.2
×
10
−
3
Ω
−
1
, without the post annealing process, even though it was completely an amorphous structure due to low substrate temperature. In addition, the field emission scanning electron microscope analysis results showed that all IZTO films are amorphous structures with very smooth surfaces regardless of the RF power and working pressure. However, the rapid thermal annealing process above the temperature of 400 °C lead to an abrupt increase in resistivity and sheet resistance due to the transition of film structure from amorphous to crystalline, which was confirmed by X-ray diffraction examination.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2009.02.138</doi><tpages>6</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Indium zinc tin oxide Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Organic light emitting diodes Physics Radio-frequency magnetron sputtering Resistivity Scanning electron microscopy Transmission electron microscopy Transparent conducting oxide X-ray diffraction |
| title | Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering |
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