Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP)

Extreme ultraviolet lithography (EUVL) is the most promising candidate for next generation lithography due to its feature size of 32 nm or below. We investigated the etching properties of materials in an alternating, phase-shift mask (PSM) structure for EUVL, including a Ru top capping layer, Mo–Si...

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Veröffentlicht in:	Thin solid films 2009-05, Vol.517 (14), p.3938-3941
Hauptverfasser:	Jung, H.Y., Park, Y.R., Lee, H.J., Lee, N.-E., Jeong, C.Y., Ahn, Jinho
Format:	Artikel
Sprache:	eng
Schlagworte:	Alternating phase-shift mask (PSM) Applied sciences Design. Technologies. Operation analysis. Testing Discharges for spectral sources (including inductively coupled plasmas) Electric discharges Electronics Etching and cleaning Exact sciences and technology Extreme ultraviolet lithography (EUVL) mask Inductively coupled plasma (ICP) Integrated circuits Microelectronic fabrication (materials and surfaces technology) Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Plasma etching Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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