Effect of oxygen pressure of SiO(x) buffer layer on the electrical properties of GZO film deposited on PET substrate

Effect of oxygen pressure of SiO(x) buffer layer on the electrical properties of GZO film deposited on PET substrate

The present work was made to investigate the effect of oxygen pressure of SiO(x) layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO(x) buffe...

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Veröffentlicht in:Thin solid films 2009-10, Vol.517 (23), p.6414-6417
Hauptverfasser: Ahn, B D, Ko, Y G, Oh, S H, Song, J H, Kim, H J
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creator Ahn, B D
Ko, Y G
Oh, S H
Song, J H
Kim, H J
description The present work was made to investigate the effect of oxygen pressure of SiO(x) layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO(x) buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiO(x) layer as a buffer, the electrical resistivity of GZO/SiO(x)/PET films gradually decreased from 7.6x10(-(3 to 6.8x10(-(4 W.cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiO(x) buffer layers. In addition, the average optical transmittance of GZO /SiO(x)/PET films in a visible regime was estimated to be ~90% comparable to that of GZO deposited onto a glass substrate.
doi_str_mv 10.1016/j.tsf.2009.02.057
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_34746325</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34746325</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_347463253</originalsourceid><addsrcrecordid>eNqNjLFuwjAURT1QqbTlA7q9CbUD7osTgpirtN1AgokFmfDcGpk49bMl-Ps6Uj-A5V7p6pwrxHOBssCifjvJyEYqxKVEJXG-GIkxYoWzGpd4Lx6YT4hYKFWORWyMoTaCN-Av12_qoA_EnAIN08auXi6vcEgZCuD0NafvIP4QkMtasK122fA9hWiJB-dztwJj3RmO1Hu2kY6Dsm62wOnAMehIT-LOaMc0-e9HMf1otu9fs_z0m4jj_my5Jed0Rz7xvqwWVV2qeXkz-Ae6f1PC</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34746325</pqid></control><display><type>article</type><title>Effect of oxygen pressure of SiO(x) buffer layer on the electrical properties of GZO film deposited on PET substrate</title><source>Elsevier ScienceDirect Journals</source><creator>Ahn, B D ; Ko, Y G ; Oh, S H ; Song, J H ; Kim, H J</creator><creatorcontrib>Ahn, B D ; Ko, Y G ; Oh, S H ; Song, J H ; Kim, H J</creatorcontrib><description>The present work was made to investigate the effect of oxygen pressure of SiO(x) layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO(x) buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiO(x) layer as a buffer, the electrical resistivity of GZO/SiO(x)/PET films gradually decreased from 7.6x10(-(3 to 6.8x10(-(4 W.cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiO(x) buffer layers. In addition, the average optical transmittance of GZO /SiO(x)/PET films in a visible regime was estimated to be ~90% comparable to that of GZO deposited onto a glass substrate.</description><identifier>ISSN: 0040-6090</identifier><identifier>DOI: 10.1016/j.tsf.2009.02.057</identifier><language>eng</language><ispartof>Thin solid films, 2009-10, Vol.517 (23), p.6414-6417</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Ahn, B D</creatorcontrib><creatorcontrib>Ko, Y G</creatorcontrib><creatorcontrib>Oh, S H</creatorcontrib><creatorcontrib>Song, J H</creatorcontrib><creatorcontrib>Kim, H J</creatorcontrib><title>Effect of oxygen pressure of SiO(x) buffer layer on the electrical properties of GZO film deposited on PET substrate</title><title>Thin solid films</title><description>The present work was made to investigate the effect of oxygen pressure of SiO(x) layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO(x) buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiO(x) layer as a buffer, the electrical resistivity of GZO/SiO(x)/PET films gradually decreased from 7.6x10(-(3 to 6.8x10(-(4 W.cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiO(x) buffer layers. In addition, the average optical transmittance of GZO /SiO(x)/PET films in a visible regime was estimated to be ~90% comparable to that of GZO deposited onto a glass substrate.</description><issn>0040-6090</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNjLFuwjAURT1QqbTlA7q9CbUD7osTgpirtN1AgokFmfDcGpk49bMl-Ps6Uj-A5V7p6pwrxHOBssCifjvJyEYqxKVEJXG-GIkxYoWzGpd4Lx6YT4hYKFWORWyMoTaCN-Av12_qoA_EnAIN08auXi6vcEgZCuD0NafvIP4QkMtasK122fA9hWiJB-dztwJj3RmO1Hu2kY6Dsm62wOnAMehIT-LOaMc0-e9HMf1otu9fs_z0m4jj_my5Jed0Rz7xvqwWVV2qeXkz-Ae6f1PC</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>Ahn, B D</creator><creator>Ko, Y G</creator><creator>Oh, S H</creator><creator>Song, J H</creator><creator>Kim, H J</creator><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20091001</creationdate><title>Effect of oxygen pressure of SiO(x) buffer layer on the electrical properties of GZO film deposited on PET substrate</title><author>Ahn, B D ; Ko, Y G ; Oh, S H ; Song, J H ; Kim, H J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_347463253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ahn, B D</creatorcontrib><creatorcontrib>Ko, Y G</creatorcontrib><creatorcontrib>Oh, S H</creatorcontrib><creatorcontrib>Song, J H</creatorcontrib><creatorcontrib>Kim, H J</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ahn, B D</au><au>Ko, Y G</au><au>Oh, S H</au><au>Song, J H</au><au>Kim, H J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of oxygen pressure of SiO(x) buffer layer on the electrical properties of GZO film deposited on PET substrate</atitle><jtitle>Thin solid films</jtitle><date>2009-10-01</date><risdate>2009</risdate><volume>517</volume><issue>23</issue><spage>6414</spage><epage>6417</epage><pages>6414-6417</pages><issn>0040-6090</issn><abstract>The present work was made to investigate the effect of oxygen pressure of SiO(x) layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO(x) buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiO(x) layer as a buffer, the electrical resistivity of GZO/SiO(x)/PET films gradually decreased from 7.6x10(-(3 to 6.8x10(-(4 W.cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiO(x) buffer layers. In addition, the average optical transmittance of GZO /SiO(x)/PET films in a visible regime was estimated to be ~90% comparable to that of GZO deposited onto a glass substrate.</abstract><doi>10.1016/j.tsf.2009.02.057</doi></addata></record>
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title Effect of oxygen pressure of SiO(x) buffer layer on the electrical properties of GZO film deposited on PET substrate
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T06%3A15%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20oxygen%20pressure%20of%20SiO(x)%20buffer%20layer%20on%20the%20electrical%20properties%20of%20GZO%20film%20deposited%20on%20PET%20substrate&rft.jtitle=Thin%20solid%20films&rft.au=Ahn,%20B%20D&rft.date=2009-10-01&rft.volume=517&rft.issue=23&rft.spage=6414&rft.epage=6417&rft.pages=6414-6417&rft.issn=0040-6090&rft_id=info:doi/10.1016/j.tsf.2009.02.057&rft_dat=%3Cproquest%3E34746325%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=34746325&rft_id=info:pmid/&rfr_iscdi=true