Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV

We investigated the energy spectra in p+n 6H-SiC diodes by a wide variety of charged particles with energies up to several hundred MeV. Though Pulse Height Defect (PHD) was detected when the samples were irradiated with high energy heavy ions (322MeV-Kr and 454MeV-Xe), linearity between pulse height...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 2009-01, Vol.615-617, p.861-864
Hauptverfasser:	Kawano, K., Nakano, I., Murakami, Makoto, Onoda, Shinobu, Kojima, Kazu, Hirao, Toshio, Iwamoto, Naoya, Ohshima, Takeshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!