Chloride-Based SiC Epitaxial Growth

Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors or/and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability a...

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Bibliographische Detailangaben
Hauptverfasser: Lundskog, A., Beyer, Franziska Christine, Pedersen, Henrik, Leone, Stefano, Henry, Anne, Janzén, Erik
Format: Tagungsbericht
Sprache:eng
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