Chloride-Based SiC Epitaxial Growth

Chloride-Based SiC Epitaxial Growth

Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors or/and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability a...

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Hauptverfasser: Lundskog, A., Beyer, Franziska Christine, Pedersen, Henrik, Leone, Stefano, Henry, Anne, Janzén, Erik
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Beyer, Franziska Christine
Pedersen, Henrik
Leone, Stefano
Henry, Anne
Janzén, Erik
description Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors or/and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the Cl/Si-ratio has on the growth have been studied. MTS is showed to be the most efficient precursor; the growth can be hindered by to much chlorine in the gas mixture. The Cl/Si-ratio is also found to be a process parameter that affects the amount of incorporated nitrogen in the epilayers.
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title Chloride-Based SiC Epitaxial Growth
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