1 MeV electron irradiation influence on GaAs solar cell performance
The results of experimental study of radiation resistance of GaAs-based solar cells are presented. The solar cells were irradiated by 1 MeV electrons at room temperature with the fluence up to 4 × 10 16 electrons cm - 2 . The radiation influence on the dark current and short-circuit current under il...
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| Veröffentlicht in: | Solar energy materials and solar cells 2008-11, Vol.92 (11), p.1336-1340 |
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| container_title | Solar energy materials and solar cells |
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| creator | Danilchenko, B. Budnyk, A. Shpinar, L. Poplavskyy, D. Zelensky, S.E. Barnham, K.W.J. Ekins-Daukes, N.J. |
| description | The results of experimental study of radiation resistance of GaAs-based solar cells are presented. The solar cells were irradiated by 1
MeV electrons at room temperature with the fluence up to
4
×
10
16
electrons
cm
-
2
. The radiation influence on the dark current and short-circuit current under illumination was investigated both experimentally and theoretically. It is shown that the radiation-produced electron traps E5 and hole traps H1 are responsible for irradiation-induced degradation of such solar cells. The radiation tolerance of the basic parameters (the short-circuit current, the output power) of GaAs solar cells is primarily determined by the radiation damage in p-regions. |
| doi_str_mv | 10.1016/j.solmat.2008.05.006 |
| format | Article |
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MeV electrons at room temperature with the fluence up to
4
×
10
16
electrons
cm
-
2
. The radiation influence on the dark current and short-circuit current under illumination was investigated both experimentally and theoretically. It is shown that the radiation-produced electron traps E5 and hole traps H1 are responsible for irradiation-induced degradation of such solar cells. The radiation tolerance of the basic parameters (the short-circuit current, the output power) of GaAs solar cells is primarily determined by the radiation damage in p-regions.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2008.05.006</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Energy ; Exact sciences and technology ; GaAs ; Irradiation ; Natural energy ; Photovoltaic conversion ; Point defects ; Q1 ; Radiation effects ; Solar cells ; Solar cells. Photoelectrochemical cells ; Solar energy ; Temperature</subject><ispartof>Solar energy materials and solar cells, 2008-11, Vol.92 (11), p.1336-1340</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0927024808001682$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20659634$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Danilchenko, B.</creatorcontrib><creatorcontrib>Budnyk, A.</creatorcontrib><creatorcontrib>Shpinar, L.</creatorcontrib><creatorcontrib>Poplavskyy, D.</creatorcontrib><creatorcontrib>Zelensky, S.E.</creatorcontrib><creatorcontrib>Barnham, K.W.J.</creatorcontrib><creatorcontrib>Ekins-Daukes, N.J.</creatorcontrib><title>1 MeV electron irradiation influence on GaAs solar cell performance</title><title>Solar energy materials and solar cells</title><description>The results of experimental study of radiation resistance of GaAs-based solar cells are presented. The solar cells were irradiated by 1
MeV electrons at room temperature with the fluence up to
4
×
10
16
electrons
cm
-
2
. The radiation influence on the dark current and short-circuit current under illumination was investigated both experimentally and theoretically. It is shown that the radiation-produced electron traps E5 and hole traps H1 are responsible for irradiation-induced degradation of such solar cells. The radiation tolerance of the basic parameters (the short-circuit current, the output power) of GaAs solar cells is primarily determined by the radiation damage in p-regions.</description><subject>Applied sciences</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>GaAs</subject><subject>Irradiation</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Point defects</subject><subject>Q1</subject><subject>Radiation effects</subject><subject>Solar cells</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Temperature</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqNkU1Lw0AQhhdRsFb_gYdc9JY4-5ndi1CKVqHiRb0u080GtqRJ3U0F_70b6l1PM8M8zMf7EnJNoaJA1d22SkO3w7FiALoCWQGoEzKjujYl50afkhkYVpfAhD4nFyltAYApLmZkSYsX_1H4zrsxDn0RYsQm4BimvG-7g--dL3KxwkUq8hqMhfNdV-x9bIe4w9y-JGctdslf_cY5eX98eFs-levX1fNysS4953wsDWsNNEy1st5opwwyyqFunBbaIKLjXAkK6CWIzGx4wxrN0LWGCXBMAp-T2-PcfRw-Dz6NdhfSdAz2fjgky4WSQmrzJ0gNZ7RW7D8glQA8gze_ICaHXRvz3yHZfQw7jN-WgZIm65m5-yPnsw5fwUebXJgkbELMCttmCJaCnVyzW3t0zU6uWZA2u8Z_AK69i6g</recordid><startdate>20081101</startdate><enddate>20081101</enddate><creator>Danilchenko, B.</creator><creator>Budnyk, A.</creator><creator>Shpinar, L.</creator><creator>Poplavskyy, D.</creator><creator>Zelensky, S.E.</creator><creator>Barnham, K.W.J.</creator><creator>Ekins-Daukes, N.J.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20081101</creationdate><title>1 MeV electron irradiation influence on GaAs solar cell performance</title><author>Danilchenko, B. ; Budnyk, A. ; Shpinar, L. ; Poplavskyy, D. ; Zelensky, S.E. ; Barnham, K.W.J. ; Ekins-Daukes, N.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e333t-92f90d26f57b8c69a21307dc8489aaac336410ae5046f5b3d2d82acf9240c2503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>GaAs</topic><topic>Irradiation</topic><topic>Natural energy</topic><topic>Photovoltaic conversion</topic><topic>Point defects</topic><topic>Q1</topic><topic>Radiation effects</topic><topic>Solar cells</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Danilchenko, B.</creatorcontrib><creatorcontrib>Budnyk, A.</creatorcontrib><creatorcontrib>Shpinar, L.</creatorcontrib><creatorcontrib>Poplavskyy, D.</creatorcontrib><creatorcontrib>Zelensky, S.E.</creatorcontrib><creatorcontrib>Barnham, K.W.J.</creatorcontrib><creatorcontrib>Ekins-Daukes, N.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Danilchenko, B.</au><au>Budnyk, A.</au><au>Shpinar, L.</au><au>Poplavskyy, D.</au><au>Zelensky, S.E.</au><au>Barnham, K.W.J.</au><au>Ekins-Daukes, N.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1 MeV electron irradiation influence on GaAs solar cell performance</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2008-11-01</date><risdate>2008</risdate><volume>92</volume><issue>11</issue><spage>1336</spage><epage>1340</epage><pages>1336-1340</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>The results of experimental study of radiation resistance of GaAs-based solar cells are presented. The solar cells were irradiated by 1
MeV electrons at room temperature with the fluence up to
4
×
10
16
electrons
cm
-
2
. The radiation influence on the dark current and short-circuit current under illumination was investigated both experimentally and theoretically. It is shown that the radiation-produced electron traps E5 and hole traps H1 are responsible for irradiation-induced degradation of such solar cells. The radiation tolerance of the basic parameters (the short-circuit current, the output power) of GaAs solar cells is primarily determined by the radiation damage in p-regions.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.solmat.2008.05.006</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0927-0248 |
| ispartof | Solar energy materials and solar cells, 2008-11, Vol.92 (11), p.1336-1340 |
| issn | 0927-0248 1879-3398 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_34654589 |
| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Energy Exact sciences and technology GaAs Irradiation Natural energy Photovoltaic conversion Point defects Q1 Radiation effects Solar cells Solar cells. Photoelectrochemical cells Solar energy Temperature |
| title | 1 MeV electron irradiation influence on GaAs solar cell performance |
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