Temperature-Dependent Characteristics of Cylindrical Gate-All-Around Twin Silicon Nanowire MOSFETs (TSNWFETs)
The characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with a radius of 5 nm have been measured in temperatures T ranging from 4 to 300 K. The dependence of the off-current suggests that thermal generation in the channel is the main leakage mechanism. The d...
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| Veröffentlicht in: | IEEE electron device letters 2007-12, Vol.28 (12), p.1129-1131 |
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| container_title | IEEE electron device letters |
| container_volume | 28 |
| creator | Cho, Keun Hwi Suk, Sung Dae Yeoh, Yun Young Li, Ming Yeo, Kyoung Hwan Kim, Dong-Won Park, Donggun Lee, Won-Seong Jung, Young Chai Hong, Byung Hak Hwang, Sung Woo |
| description | The characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with a radius of 5 nm have been measured in temperatures T ranging from 4 to 300 K. The dependence of the off-current suggests that thermal generation in the channel is the main leakage mechanism. The dependence of the subthreshold swing exhibits no body effects but shows degradations due to slight differences in the threshold voltages and in the body effect constants of the twin nanowires. The T dependence of the peak normalized transconductance g m /V DS gives a clue of 1-D phonon scattering and suggests that surface roughness scattering at the nanowire wall is dominant at low values. |
| doi_str_mv | 10.1109/LED.2007.909868 |
| format | Article |
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The dependence of the off-current suggests that thermal generation in the channel is the main leakage mechanism. The dependence of the subthreshold swing exhibits no body effects but shows degradations due to slight differences in the threshold voltages and in the body effect constants of the twin nanowires. The T dependence of the peak normalized transconductance g m /V DS gives a clue of 1-D phonon scattering and suggests that surface roughness scattering at the nanowire wall is dominant at low values.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2007.909868</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Channels ; Character generation ; Electronics ; Exact sciences and technology ; FETs ; Gate-all-around (GAA) ; MOSFETs ; Nanocomposites ; Nanomaterials ; Nanostructure ; nanowire ; Nanowires ; Scattering ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; temperature ; Temperature dependence ; Temperature distribution ; Temperature measurement ; Thermal degradation ; Threshold voltage ; Transistors</subject><ispartof>IEEE electron device letters, 2007-12, Vol.28 (12), p.1129-1131</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c414t-63fdfadab477419060930602b894f02a6aee04d263d42d13e9e9a368a66db4e03</citedby><cites>FETCH-LOGICAL-c414t-63fdfadab477419060930602b894f02a6aee04d263d42d13e9e9a368a66db4e03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4383534$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4383534$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19876848$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Cho, Keun Hwi</creatorcontrib><creatorcontrib>Suk, Sung Dae</creatorcontrib><creatorcontrib>Yeoh, Yun Young</creatorcontrib><creatorcontrib>Li, Ming</creatorcontrib><creatorcontrib>Yeo, Kyoung Hwan</creatorcontrib><creatorcontrib>Kim, Dong-Won</creatorcontrib><creatorcontrib>Park, Donggun</creatorcontrib><creatorcontrib>Lee, Won-Seong</creatorcontrib><creatorcontrib>Jung, Young Chai</creatorcontrib><creatorcontrib>Hong, Byung Hak</creatorcontrib><creatorcontrib>Hwang, Sung Woo</creatorcontrib><title>Temperature-Dependent Characteristics of Cylindrical Gate-All-Around Twin Silicon Nanowire MOSFETs (TSNWFETs)</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with a radius of 5 nm have been measured in temperatures T ranging from 4 to 300 K. The dependence of the off-current suggests that thermal generation in the channel is the main leakage mechanism. The dependence of the subthreshold swing exhibits no body effects but shows degradations due to slight differences in the threshold voltages and in the body effect constants of the twin nanowires. The T dependence of the peak normalized transconductance g m /V DS gives a clue of 1-D phonon scattering and suggests that surface roughness scattering at the nanowire wall is dominant at low values.</description><subject>Applied sciences</subject><subject>Channels</subject><subject>Character generation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Gate-all-around (GAA)</subject><subject>MOSFETs</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>nanowire</subject><subject>Nanowires</subject><subject>Scattering</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>temperature</subject><subject>Temperature dependence</subject><subject>Temperature distribution</subject><subject>Temperature measurement</subject><subject>Thermal degradation</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kUtrGzEURkVpoK7TdRfdiELbdDGONHovjfNowEkWdulSyKM7VGGscaUZQv59NTg00EU2kpDO_XQvB6GPlCwoJeZ8fXmxqAlRC0OMlvoNmlEhdEWEZG_RjChOK0aJfIfe5_xACOVc8Rnab2F_gOSGMUF1AQeIHuKAV79dcs0AKeQhNBn3LV49dSH6FBrX4Ws3QLXsumqZ-jF6vH0MEW9CF5o-4jsX-8eQAN_eb64utxmfbTd3v6bT91N00rouw4fnfY5-lvvVj2p9f32zWq6rhlM-VJK1vnXe7bgqbRsiiWFlqXfa8JbUTjoAwn0tmee1pwwMGMekdlL6HQfC5ujbMfeQ-j8j5MHuQ26g61yEfsxWayJlzUrsHH19lWRcCM6MKuDZqyBVijChuZh-__wf-tCPKZaBraE1NUwoWaDzI9SkPucErT2ksHfpyVJiJ6G2CLWTUHsUWiq-PMe6XCS0ycUm5Jcyo5XUfOI-HbkAAP-eOdNMMM7-AuWypqk</recordid><startdate>20071201</startdate><enddate>20071201</enddate><creator>Cho, Keun Hwi</creator><creator>Suk, Sung Dae</creator><creator>Yeoh, Yun Young</creator><creator>Li, Ming</creator><creator>Yeo, Kyoung Hwan</creator><creator>Kim, Dong-Won</creator><creator>Park, Donggun</creator><creator>Lee, Won-Seong</creator><creator>Jung, Young Chai</creator><creator>Hong, Byung Hak</creator><creator>Hwang, Sung Woo</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. 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The dependence of the off-current suggests that thermal generation in the channel is the main leakage mechanism. The dependence of the subthreshold swing exhibits no body effects but shows degradations due to slight differences in the threshold voltages and in the body effect constants of the twin nanowires. The T dependence of the peak normalized transconductance g m /V DS gives a clue of 1-D phonon scattering and suggests that surface roughness scattering at the nanowire wall is dominant at low values.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2007.909868</doi><tpages>3</tpages></addata></record> |
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| subjects | Applied sciences Channels Character generation Electronics Exact sciences and technology FETs Gate-all-around (GAA) MOSFETs Nanocomposites Nanomaterials Nanostructure nanowire Nanowires Scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon temperature Temperature dependence Temperature distribution Temperature measurement Thermal degradation Threshold voltage Transistors |
| title | Temperature-Dependent Characteristics of Cylindrical Gate-All-Around Twin Silicon Nanowire MOSFETs (TSNWFETs) |
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