Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO@@d4@

Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO@@d4@

An atomic-scale model for current-assisted field-accelerated thermochemical degradation via charge capturing by O vacancy (@@iV@@@dO@) is proposed based on first-principles calculations. We found that the electron current enhances the @@iV@@@dO@ formation around the @@iV@@@dO@ itself and the hole cu...

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Veröffentlicht in:Microelectronic engineering 2009-09, Vol.86 (7-9), p.1901-1904
Hauptverfasser: Nakasaki, Yasushi, Hirano, Izumi, Kato, Koichi, Mitani, Yuichiro
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container_end_page 1904
container_issue 7-9
container_start_page 1901
container_title Microelectronic engineering
container_volume 86
creator Nakasaki, Yasushi
Hirano, Izumi
Kato, Koichi
Mitani, Yuichiro
description An atomic-scale model for current-assisted field-accelerated thermochemical degradation via charge capturing by O vacancy (@@iV@@@dO@) is proposed based on first-principles calculations. We found that the electron current enhances the @@iV@@@dO@ formation around the @@iV@@@dO@ itself and the hole current makes the @@iV@@@dO@ transform into the puckered structure. The calculated activation enthalpy for breakdown and the effective dipole moment agree well with the experimental values. We also found that the @@isubordinate carriers in the generated subordinate carrier injection@ (@@iGSCI@) @@imodel@ play critical roles through a disproportion reaction of positively charged @@iV@@@dO@s.
doi_str_mv 10.1016/j.mee.2009.03.039
format Article
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title Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO@@d4@
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